Method for forming lateral heterojunction bipolar devices and the resulting devices

1. A device, comprising:

a first gate structure above an active semiconductor layer;

a second gate structure adjacent a first side of the first gate structure;

a third gate structure adjacent a second side of the first gate structure;

an emitter of a bipolar transistor positioned in the active semiconductor layer between the first gate structure and the second gate structure;

a collector of the bipolar transistor positioned in the active semiconductor layer between the first gate structure and the third gate structure;

a first base contact contacting the active semiconductor layer adjacent an end of the first gate structure, wherein a portion of the active semiconductor layer positioned under the first gate structure defines a base of the bipolar transistor; and

a first gate structure block portion positioned adjacent first ends of the first, second, and third gate structures; and

a second gate structure block portion positioned adjacent second ends of the first, second, and third gate structures.

2. The device of claim 1 , wherein the first base contact is embedded in the first gate structure block portion.

3. The device of claim 2 , further comprising a second base contact embedded in the second gate structure block portion.

4. The device of claim 1 , wherein the emitter comprises a first raised portion, the collector comprises a second raised portion, and the base contact comprises a third raised portion.

5. The device of claim 1 , wherein the active region has a cross-shaped horizontal cross-section.

6. The device of claim 1 , wherein the active region has a dumbbell-shaped horizontal cross-section.

7. The device of claim 1 , further comprising silicide regions positioned on the base, the emitter, and the first base contact.

8. A method, comprising:

forming a first gate structure above an active semiconductor layer;

forming a second gate structure adjacent a first side of the first gate structure;

forming a third gate structure adjacent a second side of the first gate structure;

forming an emitter of a bipolar transistor in the active semiconductor layer between the first gate structure and the second gate structure;

forming a collector of the bipolar transistor in the active semiconductor layer between the first gate structure and the third gate structure;

forming a first base contact contacting the active semiconductor layer adjacent an end of the first gate structure, wherein a portion of the active semiconductor layer positioned under the first gate structure defines a base of the bipolar transistor; and

forming a first gate structure block portion positioned adjacent first ends of the first, second, and third gate structures; and

forming a second gate structure block portion positioned adjacent second ends of the first, second, and third gate structures.

9. The method of claim 8 , wherein the first gate structure block portion defines a first opening exposing a first region of the active semiconductor layer, and the method comprises:

forming a mask layer exposing the first region of the active semiconductor layer;

recessing the active semiconductor layer in the first region; and

epitaxially growing the first base contact in the first region.

10. The method of claim 9 , wherein the second gate structure block portion defines a second opening exposing a second region of the active semiconductor layer, and the method comprises:

forming the mask layer to expose the second region of the active semiconductor layer;

recessing the active semiconductor layer in the second region; and

epitaxially growing a second base contact in the second region contacting the active region.

11. The method of claim 10 , further comprising forming a silicide layer on the first and second base contacts.

12. The method of claim 8 , wherein forming the emitter and forming the collector comprises:

forming a mask layer exposing a first region of the active semiconductor layer between the first gate structure and the second gate structure and a second region of the active semiconductor layer between the first gate structure and the third gate structure;

recessing the active semiconductor layer in the first and second regions; and

epitaxially growing the emitter in the first region and the collector in the second region.

13. The method of claim 12 , further comprising forming a silicide layer on the emitter and the collector.

14. A method, comprising:

forming a gate structure above an active semiconductor layer, wherein the gate structure comprises a first line portion, a first block portion positioned on a first end of the first line portion, and a second block portion positioned on a second end of the first line portion, wherein the first block portion defines a first opening exposing the active semiconductor layer;

forming a first base contact in the first opening;

forming an emitter of a bipolar transistor adjacent a first side of the first line portion; and

forming a collector of the bipolar transistor adjacent a second side of the first line portion, wherein a portion of the active semiconductor layer positioned under the first line portion defines a base of the bipolar transistor; and

forming a second line portion of the gate structure extending between the first block portion and the second block portion, wherein the emitter is formed between the first line portion and the second line portion; and

forming a third line portion of the gate structure extending between the first block portion and the second block portion, wherein the collector is formed between the first line portion and the third line portion.

15. The method of claim 14 , wherein forming the emitter and forming the collector comprises:

forming a mask layer exposing a first region of the active semiconductor layer between the first line portion and the second line portion and a second region of the active semiconductor layer between the first line portion and the third line portion;

recessing the active semiconductor layer in the first and second regions; and

epitaxially growing the emitter in the first region and the collector in the second region.

16. The method of claim 14 , further comprising forming a silicide layer on the emitter and the collector.

17. The method of claim 14 , further comprising forming a silicide layer on the first base contact.