Three-dimensional phase change memory device including vertically constricted current paths and methods of manufacturing the same
An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory openings are formed through the alternating stack. Protruding tip portions are formed on each of the sacrificial material layers around the memory openings. A plurality of insulating spacers is formed within each memory opening between each vertically neighboring pair of tip portions of the sacrificial material layers. A phase change memory material and a vertical bit line are formed within each of the memory openings. The phase change memory material can be formed as a vertical stack of discrete annular phase change memory material portions, or can be formed as a continuous phase change memory material layer. Each of the sacrificial material layer can be replaced by an electrically conductive layer.
1. A three-dimensional memory device comprising:
an alternating stack of insulating layers and electrically conductive layers located over a substrate; and
memory openings extending through the alternating stack and filled within a respective memory opening fill structure,
wherein:
each memory opening fill structure comprises a vertical bit line and a vertical stack of discrete phase change memory material portions;
each of the discrete phase change memory material portions in the vertical stack is located between a respective vertically neighboring pair of the insulating layers within the alternating stack and has a vertical thickness that is less than a vertical thickness of a respective electrically conductive layer located between the respective vertically neighboring pair of the insulating layers within the alternating stack; and
each memory opening fill structure comprises a vertical stack of spacers; and
a plurality of spacers within the vertical stack of spacers contacts a sidewall, a portion of a top surface, and a portion of a bottom surface, of a respective one of the insulating layers within the alternating stack.
2. The three-dimensional memory device of claim 1 , wherein each spacer within the plurality of spacers contacts a bottom surface of an overlying one of the discrete phase change memory material portions and contacts a top surface of an underlying one of the discrete phase change memory material portions.
3. The three-dimensional memory device of claim 2 , wherein each interface between the plurality of spacers and the discrete phase change memory material portions is an annular interface located within a respective horizontal plane.
4. The three-dimensional memory device of claim 1 , wherein each spacer within the plurality of spacers comprises:
an upper annular convex surface having a bottom periphery that contacts the top surface of the respective one of the insulating layers within the alternating stack; and
a lower annular convex surface having a top periphery that contacts the bottom surface of the respective one of the insulating layers within the alternating stack.
5. The three-dimensional memory device of claim 1 , wherein a spacer among the plurality of spacers comprises:
an annular top surface having an inner periphery that is adjoined to an upper periphery of a vertical cylindrical sidewall of the spacer; and
an annular bottom surface having an inner periphery that is adjoined to a lower periphery of the vertical cylindrical sidewall of the spacer.