Soft erase and programming of nonvolatile memory
A non-volatile storage apparatus includes a plurality of non-volatile memory cells and control circuitry. The control circuitry is configured to apply one or more soft erase pulses to the plurality of non-volatile memory cells to reduce threshold voltages of the plurality of non-volatile memory cells from initial levels corresponding to programmed data to intermediate levels below the initial levels and above an erased level. The control circuitry is configured to apply one or more soft programming pulse to increase threshold voltages of the plurality of non-volatile memory cells from the intermediate levels to final levels corresponding to the programmed data.
1. A non-volatile storage apparatus, comprising:
a plurality of non-volatile memory cells in a Multi-Level Cell (MLC) block in a non-volatile memory die; and
control circuits configured to read the plurality of non-volatile memory cells at initial levels corresponding to programmed data, copy read data to a temporary location in a Single Level Cell (SLC) block in the non-volatile memory die, apply one or more soft erase pulses to the plurality of non-volatile memory cells to reduce threshold voltages of the plurality of non-volatile memory cells from the initial levels corresponding to programmed data to intermediate levels below the initial levels and above an erased level and apply one or more soft programming pulse to increase threshold voltages of the plurality of non-volatile memory cells from the intermediate levels to final levels corresponding to the programmed data.
2. The non-volatile storage apparatus of claim 1 wherein the control circuits are further configured to record times at which blocks were last programmed and identify a block containing the plurality of non-volatile memory cells for soft erasing and soft programming using recorded time since last programming.
3. The non-volatile storage apparatus of claim 2 wherein the control circuits are further configured to identify the block for soft erasing and soft programming using a combination of the recorded time since last programming and temperature from a temperature-sensing circuit on the memory die.
4. The non-volatile storage apparatus of claim 1 wherein the control circuits are further configured to maintain a count of how many times blocks are read and identify a block containing the plurality of non-volatile memory cells for soft erasing and soft programming according to the number of times the block was read.
5. The non-volatile storage apparatus of claim 2 wherein the control circuits are further configured to perform Error Correction Code (ECC) correction of the read data prior to copying the read data to the temporary location.
6. The non-volatile storage apparatus of claim 1 wherein the control circuits are further configured to verify the plurality of non-volatile memory cells at the final levels corresponding to the programmed data.
7. The non-volatile storage apparatus of claim 1 wherein the control circuits are further configured to erase the plurality of non-volatile memory cells by applying erase pulses to the plurality of non-volatile memory cells to reduce threshold voltages of the plurality of non-volatile memory cells to levels below the erase level, the erase pulses are higher in voltage and/or longer in duration than soft erase pulses.
8. The non-volatile storage apparatus of claim 1 wherein the control circuits are further configured to program the plurality of non-volatile memory cells from below the erased level by applying programming pulses to the plurality of non-volatile memory cells to increase threshold voltages of the plurality of non-volatile memory cells to programmed levels, the programming pulses are higher in voltage and/or longer in duration than soft programming pulses.
9. The non-volatile storage apparatus of claim 1 wherein the plurality of non-volatile memory cells include charge-trapping elements.
10. A method comprising:
identifying a block for soft erasing and soft programming using a combination of time since programming of the block and temperature of a memory die where the block is located;
copying data from a plurality of non-volatile memory cells in the block to a location outside the block;
soft erasing the block to reduce threshold voltages of the plurality of non-volatile memory cells to intermediate voltages that are higher than an erased voltage; and
soft programming the plurality of non-volatile memory cells from the intermediate voltages to programmed states corresponding to the data.
11. The method of claim 10 further comprising:
maintaining a count of a number of read operations performed on the block;
identifying the block for soft erasing and soft programming using the number of read operations in combination with the time since programming of the block and temperature of the memory die where the block is located.
12. The method of claim 10 wherein soft programming is performed subsequent to soft erasing without verifying the plurality of non-volatile memory cells at the intermediate voltages.
13. The method of claim 10 wherein the block is a Multi Level Cell (MLC) block and the location outside the block is a Single Level Cell (SLC) block in the memory die.
14. The method of claim 10 wherein soft erasing includes applying one or more soft erase pulses that are at least one of: fewer in number, less in voltage, or shorter in duration than erase pulses used to erase the block to reduce threshold voltages of the plurality of non-volatile memory cells to below the erased voltage.
15. The method of claim 14 wherein no erase verify is performed between the soft erase pulses or between the soft erase pulses and a first soft programming pulse.
16. The method of claim 15 wherein soft programming includes applying one or more soft programming pulses that are at least one of: fewer in number, less in voltage, and shorter in duration than programming pulses used to program the plurality of non-volatile memory cells from below an erased state to programmed states.
17. The method of claim 16 further comprising performing program verify between soft programming pulses to verify states of the plurality of non-volatile memory cells at the programmed states.
18. The method of claim 17 further comprising, in response to a failure to verify the plurality of non-volatile memory cells at the programmed states, selecting an alternate block, copying the data from the location outside the block to the alternate block, and erasing the block or discarding the block.
19. A non-volatile storage apparatus, comprising:
a controller configured to be connected to a plurality of memory dies, each memory die including a non-volatile memory structure, the controller is configured to identify a plurality of non-volatile memory cells in a memory die for soft erase and soft programming using a combination of time since last programming of the plurality of non-volatile memory cells and temperature of the memory die, cause soft erase and soft programming of the plurality of non-volatile memory cells to reduce threshold voltages of the plurality of non-volatile memory cells from initial levels corresponding to programmed data to intermediate levels below the initial levels and above an erased level and apply one or more soft programming pulse to increase threshold voltages of the non-volatile memory cells from the intermediate levels to final levels corresponding to the programmed data.
20. The non-volatile storage apparatus of claim 19 wherein the controller is further configured to read the plurality of non-volatile memory cells at initial levels corresponding to programmed data and copy read data to a temporary location in a Single Level Cell (SLC) block in the memory die.