Stacked through-silicon vias for multi-device packages

1. A semiconductor device, comprising:

a semiconductive substrate including a first surface and a backside surface opposite the first surface;

a stacked through-silicon via, including a plurality of stacked through-silicon via first portions that communicate to the first surface, and a stacked through-silicon via second portion that communicates to the backside surface, wherein the stacked through-silicon via first portions contact the stacked through-silicon via second portion, and wherein the stacked through-silicon via first portions have a smaller lateral dimension than the stacked through-silicon via second portion, and wherein individual through-silicon via first portions in the plurality of stacked through-silicon via first portions couple to at least two different structures in a metallization coupled to the first surface, wherein the metallization includes an interconnect surface;

a subsequent semiconductive unit mated at the interconnect surface, wherein the stacked through-silicon via is coupled to the subsequent semiconductive unit at the interconnect surface;

at least one active semiconductive region derived from the first surface; and

a keep-out region on the first surface that surrounds and is adjacent the stacked through-silicon via first portions.

2. The semiconductive device of claim 1 , wherein the stacked through-silicon via includes a stacked through-silicon via third portion between the stacked through-silicon via first and second portions, and wherein the stacked through-silicon via third portion has a lateral dimension larger than the stacked through-silicon via first portions and a lateral dimension smaller than the stacked through-silicon via second portion.

3. The semiconductive device of claim 1 ,

further including a semiconductor package substrate coupled to the semiconductive device at the backside surface.

4. The semiconductive device of claim 1 , further including a small-metallization via in the metallization that contacts the stacked through-silicon via first portion, and that penetrates the metallization from a small metallization, metal-zero (M 0 ) to at least to a small metallization Mn−1.

5. The semiconductive device of claim 1 , wherein the stacked through-silicon via is a first stacked through-silicon via in the semiconductive substrate, further including a subsequent stacked through-silicon via that communicates from the backside surface to the first surface.

6. The semiconductive device of claim 1 , wherein the plurality of stacked through-silicon via first portions are within a lateral footprint of the stacked through-silicon via second portion.

7. The semiconductive device of claim 1 , wherein the stacked through-silicon via is a first stacked through-silicon via in the semiconductive substrate, further including:

a second stacked through-silicon via that communicates from the backside surface to the first surface; and

a third stacked through-silicon via that communicates from the backside surface to the first surface, wherein the first and third stacked through-silicon vias straddle the second stacked through-silicon via, wherein the first and third stacked through-silicon vias are coupled by silicon metal routing, and where the first and third stacked through-silicon vias are selected from the group consisting of power, ground and signal stacked through-silicon vias, and wherein the second stacked through-silicon via is differently selected from the power, ground and signal through-silicon vias.

8. The semiconductive device of claim 7 , wherein the first and third stacked through-silicon vias are coupled to ground (Vss) and wherein the second stacked through-silicon via is coupled to signal.

9. The semiconductive device of claim 7 , wherein the first, second and third stacked through-silicon vias are in a first row, further including in a second row adjacent to the first row, the second row including:

a fourth stacked through-silicon via that communicates from the backside surface to the first surface;

a fifth stacked through-silicon via that communicates from the backside surface to the first surface; and

a sixth stacked through-silicon via that communicates from the backside surface to the first surface, wherein the fourth and sixth stacked through-silicon vias straddle the fifth stacked through-silicon via, wherein the fourth and sixth stacked through-silicon vias are coupled by silicon metal routing, and wherein the fourth and sixth stacked through-silicon vias are selected from the group consisting of power, ground and signal stacked through-silicon vias that is different from the first and third stacked through-silicon vias in the first row, and wherein the fifth stacked through-silicon via is selected from another of the power, ground and signal through-silicon vias.

10. The semi conductive device of claim 9 :

wherein in the first row, the first and third stacked through-silicon vias are coupled to ground by silicon metal routing and wherein the second stacked through-silicon via is coupled to signal;

wherein in the second row, the fourth and sixth stacked through-silicon vias are coupled to power by silicon metal routing and wherein the fifth stacked through-silicon via is coupled to signal.

11. The semiconductive device of claim 9 , further including a third row adjacent the second row, the third row including:

a seventh stacked through-silicon via that communicates from the backside surface to the first surface;

an eighth stacked through-silicon via that communicates from backside surface to the first surface; and

a ninth stacked through-silicon via that communicates from the backside surface to the first surface, wherein the seventh and ninth stacked through-silicon vias straddle the eighth stacked through-silicon via, wherein the seventh and ninth stacked through-silicon vias are coupled by silicon metal routing, and wherein the seventh and ninth stacked through-silicon vias are selected from the group consisting of power, ground and signal stacked through-silicon vias that is the same selection of the first and third stacked through-silicon vias in the first row, and wherein the eighth stacked through-silicon via is selected from another of the power, ground and signal through-silicon vias.

12. The semiconductive device of claim 11 , wherein the first and third stacked through-silicon vias are connected to ground by a silicon metal routing and wherein the second and fourth stacked through-silicon vias are connected to power by a different silicon metal routing.

13. The semiconductive device of claim 7 , wherein the silicon metal routing is in a first metallization zone.

14. The semiconductive device of claim 7 , wherein the silicon metal routing extends across a first metallization zone and a giant metallization zone.

15. The semiconductive device of claim 1 , wherein the stacked through-silicon via is a first stacked through-silicon via in the semiconductive substrate, further including:

a second stacked through-silicon via that communicates from the backside surface to the first surface;

a third stacked through-silicon via that communicates from the backside surface to the first surface; and

a fourth stacked through-silicon via that communicates from the backside surface to the first surface, wherein the first and third stacked through-silicon vias straddle the second stacked through-silicon via, wherein the second and fourth stacked through-silicon vias straddle the third stacked through-silicon via, wherein the first and third stacked through-silicon vias are coupled by silicon metal routing, wherein the second and fourth stacked through-silicon vias are coupled by a different silicon metal routing, wherein the first and third stacked through-silicon vias are selected from the group consisting of power, ground and signal stacked through-silicon vias, and wherein the second and fourth stacked through-silicon vias are differently selected from the power, ground and signal through-silicon vias.

16. The semiconductive device of claim 15 , wherein the first, second, third and fourth stacked through-silicon vias are in a first row, further including in a second row adjacent to the first row, the second row including:

a fifth stacked through-silicon via that communicates from the backside surface to the first surface;

a sixth stacked through-silicon via that communicates from the backside surface to the first surface;

a seventh stacked through-silicon via that communicates from the backside surface to the first surface; and

an eighth stacked through-silicon via that communicates from the backside surface to the first surface, wherein the fifth and seventh stacked through-silicon vias straddle the sixth stacked through-silicon via, wherein the sixth and eighth stacked through-silicon vias straddle the seventh stacked through-silicon via, wherein the fifth, sixth, seventh and eighth stacked through-silicon vias are coupled to signal.

17. The semiconductive device of claim 16 , further including a third row adjacent the second row, the third row including:

a ninth stacked through-silicon via that communicates from the backside surface to the first surface;

a tenth stacked through-silicon via that communicates from the backside surface to the first surface;

an eleventh stacked through-silicon via that communicates from the backside surface to the first surface; and

a twelfth stacked through-silicon via that communicates from the backside surface to the first surface, wherein the ninth and eleventh stacked through-silicon vias straddle the tenth stacked through-silicon via, wherein the tenth and twelfth stacked through-silicon vias straddle the eleventh stacked through-silicon via, wherein the ninth and eleventh stacked through-silicon vias are coupled by silicon metal routing, wherein the tenth and twelfth stacked through-silicon vias are coupled by a different silicon metal routing, wherein the ninth and eleventh stacked through-silicon vias are selected from the group consisting of power, ground and signal stacked through-silicon vias, and wherein the tenth and twelfth stacked through-silicon vias are differently selected from the power, ground and signal through-silicon vias.

18. The semiconductive device of claim 17 , wherein for the first and third rows, the first, third, fifth, seventh, and ninth stacked through-silicon vias are coupled to ground, and the second, fourth, sixth, eighth, and tenth stacked through-silicon vias are coupled to power.