Power delivery for embedded interconnect bridge devices and methods
A semiconductor device and associated methods are disclosed. In one example, dies are interconnected through a bridge in a substrate. A reference voltage stack extends over at least a portion of the interconnect bridge, and a passive component is coupled to the reference voltage stack. In one example, the passive component helps to reduce interference in the power supply to components in the semiconductor device, such as the dies and the interconnect bridge.
1. A semiconductor device, comprising:
a first die and a second die coupled to a surface of a substrate;
an interconnect bridge embedded within the substrate, and coupled between the first die and the second die;
a reference voltage stack extending over at least a portion of the interconnect bridge, the reference voltage stack including at least two planes located one over another with at least one via passing through one of the planes, the planes adapted to operate at two different reference voltages; and
at least one passive component located on the substrate and coupled to the reference voltage stack, wherein the at least one passive component is located within a lateral footprint of a space between the first die and the second die.
2. The semiconductor device of claim 1 , wherein the at least one passive component is located on the surface of the substrate, between the first die and the second die.
3. The semiconductor device of claim 1 , wherein the at least one passive component is embedded beneath the surface of the substrate, between the first die and the second die.
4. The semiconductor device of claim 1 , wherein the reference voltage stack includes a power source and a ground source.
5. The semiconductor device of claim 1 , wherein the at least one passive component includes a capacitor.
6. The semiconductor device of claim 1 , wherein the reference voltage stack includes three or more voltage levels, including a ground level and two different power levels.
7. The semiconductor device of claim 1 , wherein the interconnect bridge is a silicon bridge.
8. A semiconductor device, comprising:
a first die and a second die coupled to a surface of a substrate;
an interconnect bridge embedded within the substrate, and coupled between the first die and the second die;
a reference plane stack extending over at least a portion of the interconnect bridge, the reference plane stack including at least two reference planes located one over another with at least one via passing through one of the planes, the planes adapted to operate at two different reference voltages; and
at least one passive component located on the substrate and coupled to the reference plane stack, wherein the at least one passive component is located within a lateral footprint of a space between the first die and the second die.
9. The semiconductor device of claim 8 , wherein the at least one passive component is coupled to a top of an upper reference plane, and also coupled through an opening in the upper reference plane to a lower reference plane.
10. The semiconductor device of claim 8 , wherein the reference plane stack is further coupled to one or more planes within the interconnect bridge.
11. The semiconductor device of claim 8 , wherein the reference plane stack includes two coplanar partial planes, each with a different power level and a ground plane.
12. The semiconductor device of claim 8 , wherein one or more individual reference planes in the reference plane stack is coupled to a power connection on a bottom surface of the substrate through one or more edge vias.
13. The semiconductor device of claim 8 , wherein the at least one passive component includes a capacitor.