Self aligned replacement metal source/drain finFET
View Patent ↗A fin-shaped field effect transistor (finFET) device comprising includes a substrate. an insulating layer displaced over the substrate, and a fin. The device also includes a gate formed over the fin, the gate including: a gate stack; and a high-k dielectric on opposing side of the gate stack. The device further includes metallic source and drain regions formed over the fin and on opposing sides of the gate.
1. A fin-shaped field effect transistor (finFET) device comprising:
a fin disposed upon a substrate;
a gate comprising two sidewall spacers, the gate being arranged over and around the fin, wherein the fin has:
a first region having a top surface disposed a first height above the substrate where it passes through the gate,
a second region abutting the first region: having a top surface disposed a second height above the substrate, being disposed outside the gate on a first side, and the second height being less than the first height,
a third region abutting the first region: having a top surface disposed the second height above the substrate, and being disposed outside the gate on a second side,
a first substantially vertical surface where the first region abuts the second region, and
a second substantially vertical surface where the first region abuts the third region;
a silicide layer covering the top surfaces of the second and third regions and the first and second substantially vertical surfaces of the fin;
a first metallic source and drain region covering the silicide layer on the first side of the gate; and
a second metallic source and drain region covering the silicide layer on the second side of the gate.
2. The finFET device of claim 1 , wherein the fin and the substrate comprise the same material.
3. The finFET device of claim 2 , wherein the fin extends upwardly from the substrate and through an insulating layer arranged on the substrate.
4. The finFET device of claim 1 , wherein the fin and the substrate comprise the same material, and the fin extends upwardly from a top surface of an insulating layer arranged on the substrate.
5. The finFET device of claim 1 , wherein the silicide layer comprises nickel.
6. The finFET device of claim 1 , wherein the silicide layer comprises platinum.
7. The finFET device of claim 1 , wherein the silicide layer comprises erbium.
8. The finFET device of claim 1 , wherein the first and second metallic source and drain regions comprise a metal.
9. The finFET device of claim 8 , wherein the metal is Al, W, Cu, or a combination thereof.
10. The finFET device of claim 1 , wherein the gate comprises a metal gate stack.
11. A fin-shaped field effect transistor (finFET) device comprising:
a fin disposed upon a substrate;
a gate comprising a dielectric layer, a workfunction metal, a gate metal, and two sidewall spacers, the gate being arranged over and around the fin, wherein the fin has:
a first region having a top surface disposed a first height above the substrate where it passes through the gate,
a second region abutting the first region: having a top surface disposed a second height above the substrate, being disposed outside the gate on a first side, and the second height being less than the first height,
a third region abutting the first region: having a top surface disposed the second height above the substrate, and being disposed outside the gate on a second side,
a first substantially vertical surface where the first region abuts the second region, and
a second substantially vertical surface where the first region abuts the third region;
a silicide layer covering the top surfaces of the second and third regions and the first and second substantially vertical surfaces of the fin;
a first metallic source and drain region covering the silicide layer on the first side of the gate; and
a second metallic source and drain region covering the silicide layer on the second side of the gate.
12. The finFET device of claim 11 , wherein the fin and the substrate comprise the same material.
13. The finFET device of claim 12 , wherein the fin extends upwardly from the substrate and through an insulating layer arranged on the substrate.
14. The finFET device of claim 11 , wherein the fin and the substrate comprise the same material, and the fin extends upwardly from a top surface of an insulating layer arranged on the substrate.
15. The finFET device of claim 11 , wherein the silicide layer comprises nickel.
16. The finFET device of claim 11 , wherein the silicide layer comprises platinum.
17. The finFET device of claim 11 , wherein the silicide layer comprises erbium.
18. The finFET device of claim 11 , wherein the first and second metallic source and drain regions comprise a metal.
19. The finFET device of claim 18 , wherein the metal is Al, W, Cu, or a combination thereof.
20. The finFET device of claim 11 , wherein the dielectric layer comprises a high-k dielectric layer.