Semiconductor device having work-function metal and method of forming the same
In a semiconductor device, a first active area, a second active area, and a third active area are formed on a substrate. A first gate electrode is formed on the first active area, a second gate electrode is formed on the second active area, and a third gate electrode is formed on the third active area. The first gate electrode has a first P-work-function metal layer, a first capping layer, a first N-work-function metal layer, a first barrier metal layer, and a first conductive layer. The second gate electrode has a second capping layer, a second N-work-function metal layer, a second barrier metal layer, and a second conductive layer. The third gate electrode has a second P-work-function metal layer, a third capping layer, a third N-work-function metal layer, and a third barrier metal layer. The third gate electrode does not have the first and second conductive layers.
1. A semiconductor device comprising:
a substrate having a memory cell area and a logic area;
a first fin active area and a second fin active area in the memory cell area on the substrate;
an insulating layer on the substrate, the insulating layer configured to cover the first fin active area and the second fin active area;
a first gate electrode configured to cover a side surface of the first fin active area and cross the first fin active area, the first gate electrode including,
a first layer in the first fin active area,
a first barrier metal layer on the first layer, and
a first conductive layer on the first barrier metal layer, a material of the first conductive layer being different than a material from the first barrier metal layer; and
a second gate electrode configured to cover a side surface of the second fin active area and cross the second fin active area, the second gate electrode including,
a second layer on the second fin active area,
a second barrier metal layer on the second layer, and
a second conductive layer on the second barrier metal layer,
wherein a bottom surface of the first conductive layer is closer to the substrate than a bottom surface of the second conductive layer
wherein a first width of the first gate electrode is substantially the same as a second width of the second gate electrode, and
wherein a thickness of the second layer is greater than a thickness of the first layer.
2. The semiconductor device of claim 1 , wherein a thickness of the first layer is 1 nm to 2 nm.
3. The semiconductor device of claim 1 , wherein a thickness of the second layer is 3 nm to 5 nm.
4. The semiconductor device of claim 1 , wherein a material contained in the first layer is different from a material contained in the second layer.
5. The semiconductor device of claim 1 , wherein the first layer comprises TiN.
6. The semiconductor device of claim 1 , wherein the second layer comprises at least one of TiAlC and TiAl.
7. The semiconductor device of claim 1 , wherein a width of the first conductive layer is greater than a width of the second conductive layer.
8. The semiconductor device of claim 1 , wherein
the first layer is in contact with the first barrier metal layer, and
the second layer is in contact with the second barrier metal layer.
9. A semiconductor device comprising:
a substrate having a memory cell area and a logic area;
a first fin active area and a second fin active area in the memory cell area on the substrate;
an insulating layer on the substrate, the insulating layer configured to cover the first fin active area and the second fin active area;
a first gate electrode configured to cover a side surface of the first fin active area, and cross the first fin active area, the first gate electrode including,
a first layer in the first fin active area,
a first barrier metal layer on the first layer, and
a first conductive layer on the first barrier metal layer, a material of the first conductive layer being different than a material from the first barrier metal layer; and
a second gate electrode configured to cover a side surface of the second fin active area, and cross the second fin active area, the second gate electrode including,
a second layer on the second fin active area,
a second barrier metal layer on the second layer, and
a second conductive layer on the second barrier metal layer,
wherein a width of the first conductive layer is greater than a width of the second conductive layer,
wherein a first width of the first gate electrode is substantially the same as a second width of the second gate electrode, and
wherein a thickness of the first layer is different from a thickness of the second layer.
10. The semiconductor device of claim 9 , wherein a thickness of the first layer is greater than a thickness of the second layer.
11. The semiconductor device of claim 9 , wherein a thickness of the first layer is 1 nm to 2 nm.
12. The semiconductor device of claim 9 , wherein a thickness of the second layer is 3 nm to 5 nm.
13. The semiconductor device of claim 9 , wherein a material contained in the first layer is different from a material contained in the second layer.
14. The semiconductor device of claim 9 , wherein the first layer comprises TiN.
15. The semiconductor device of claim 9 , wherein the second layer comprises at least one of TiAlC and TiAl.
16. The semiconductor device of claim 9 , wherein the first layer is in contact with the first barrier metal layer and the second layer is in contact with the second barrier metal layer.