Determining tilt angle in patterned arrays of high aspect-ratio structures by small-angle x-ray scattering
Provided herein are methods and apparatus for characterizing high aspect ratio (HAR) structures of fabricated or partially fabricated semiconductor devices. The methods involve using small angle X-ray scattering (SAXS) to determine average parameters of an array of HAR structures. In some implementations, SAXS is used to analyze symmetry of HAR structures in a sample and may be referred to as tilted structural symmetry analysis-SAXS (TSSA-SAXS) or TSSA. Analysis of parameters such as tilt, sidewall angle, bowing, and the presence of multiple tilts in HAR structures may be performed.
1. A method comprising:
illuminating a sample including an array of structures with x-ray radiation such that the sample scatters the x-ray radiation;
rotating the sample through a series of angular positions around a first measurement axis;
at each angular position of the series of angular positions around the first measurement axis, detecting a pattern of intensity of the scattered x-ray radiation; and
determining, based on a symmetry of the pattern of intensity of the scattered x-ray radiation, an average tilt of the array of structures in a first plane.
2. The method of claim 1 , wherein determining, based on the symmetry of the pattern of intensity of the scattered x-ray radiation, the average tilt of the array of structures in the first plane comprises determining the average tilt of the array of structures in the first plane without a reference to a model.
3. The method of claim 1 , wherein determining, based on the symmetry of the pattern of intensity of the scattered x-ray radiation, the average tilt of the array of structures in the first plane further comprises determining a magnitude and direction of the average tilt of the array of structures in the first plane.
4. The method of claim 1 , further comprising:
rotating the sample through a series of angular positions around a second measurement axis;
at each angular position of the series of angular positions around the second measurement axis, detecting a pattern of intensity of the scattered x-ray radiation; and
determining, based on a symmetry of the pattern of intensity of the scattered x-ray radiation, an average tilt of the array of structures in a second plane.
5. The method of claim 4 , further comprising: determining an average overall tilt of the array of structures from the average tilt in the first plane and the average tilt in the second plane.
6. The method of claim 4 , wherein the first measurement axis and the second measurement axis are orthogonal.
7. The method of claim 4 , wherein the first measurement axis and the second measurement axis are not orthogonal.
8. The method of claim 1 , further comprising:
rotating the sample by an angle x around an axis orthogonal to the first measurement axis prior to rotating the sample through the series of angular positions around the first measurement axis.
9. The method of claim 1 , wherein determining, based on the symmetry of the pattern of intensity of the scattered x-ray radiation, the average tilt of the array of structures in the first plane comprises comparing peak intensities of a right side of the pattern of intensity of the scattered x-ray radiation with peak intensities of a left side of the pattern of intensity of the scattered x-ray radiation.
10. The method of claim 1 , wherein determining, based on the symmetry of the pattern of intensity of the scattered x-ray radiation, the average tilt of the array of structures in the first plane comprises plotting goodness of symmetry (GOS) values vs sample angles, wherein a GOS value at a sample angle is given by
GOS
=
∑
i
=
1
n
(
Intensity
Left
i
-
Intensity
Right
i
)
2
where there are n peaks.
11. The method of claim 1 , wherein determining, based on the symmetry of the pattern of intensity of the scattered x-ray radiation, the average tilt of the array of structures in the first plane further comprises determining a sample angle at which the pattern of intensity of the scattered x-ray radiation is symmetric.
12. The method of claim 1 , wherein determining, based on the symmetry of the pattern of intensity of the scattered x-ray radiation, the average tilt of the array of structures in the first plane comprises determining the average tilt of the array of structures in the first plane to a resolution of at least 0.05°.
13. A method comprising:
illuminating a sample including an array of structures with x-ray radiation such that the sample scatters the x-ray radiation;
rotating the sample through a series of angular positions around a first measurement axis;
at each angular position of the series of angular positions around the first measurement axis, detecting a pattern of intensity of the scattered x-ray radiation; and
determining, based on a symmetry of the pattern of intensity of the scattered x-ray radiation, if the array of structures is characterized by one or more of: a tilt, a non-vertical sidewall angle, bowing, or kinking.