IP Library › Granted Patent US 12,188,883
Granted Patent B2
US 12,188,883 · App. 17/994,858 · Granted Jan 7, 2025

X-ray reflectometry apparatus and method thereof for measuring three dimensional nanostructures on flat substrate

Inventors: Bo-Ching He (Hsinchu, TW); Chun-Ting Liu (Taichung, TW); Wei-En Fu (Yangmei, TW); Wen-Li Wu (Hsinchu, TW)
Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
G01N23/20008G01B15/04G01N2223/052G01N2223/3303
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Quick Facts
Patent No.
US 12,188,883
App. No.
17/994,858
Granted
Jan 7, 2025
Kind
B2
Abstract

This disclosure relates to an X-ray reflectometry apparatus and a method for measuring a three-dimensional nanostructure on a flat substrate. The X-ray reflectometry apparatus comprises an X-ray source, an X-ray reflector, a 2-dimensional X-ray detector, and a two-axis moving device. The X-ray source is for emitting X-ray. The X-ray reflector is configured for reflecting the X-ray onto a sample surface. The 2-dimensional X-ray detector is configured to collect a reflecting X-ray signal from the sample surface. The two-axis moving device is configured to control two-axis directions of the 2-dimensional X-ray detector to move on at least one of x-axis and z-axis with a formula concerning an incident angle of the X-ray with respect to the sample surface for collecting the reflecting X-ray signal.

Claims (328)

1. An X-ray reflectometry apparatus for measuring a three-dimensional nanostructure on a flat substrate, comprising:

an X-ray source for emitting X-ray;

an X-ray reflector configured for reflecting the X-ray onto a sample surface;

a 2-dimensional X-ray detector configured to collect a reflecting X-ray signal from the sample surface; and

a two-axis moving device configured to control two-axis directions of the 2-dimensional X-ray detector to move on at least one of x-axis and z-axis with a formula concerning an incident angle of the X-ray with respect to the sample surface for collecting the reflecting X-ray signal.

2. The X-ray reflectometry apparatus according to claim 1 , wherein the two-axis moving device comprises an x-axis moving device and a z-axis moving device, wherein the x-axis moving device is configured to control the 2-dimensional X-ray detector to move on the x-axis, the z-axis moving device is configured to control the 2-dimensional X-ray detector to move on the z-axis.

3. The X-ray reflectometry apparatus according to claim 1 , further comprising a rotating device configured for rotating the 2-dimensional X-ray detector in x-z plane.

4. The X-ray reflectometry apparatus according to claim 1 , wherein when the incident angle of the X-ray with respect to the sample surface is set as a range from θ′ to θ′+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis with a formula:

W

<

L

tan

⁡

(

θ

′

+

Δθ

)

-

tan

⁢

θ

′

,

 wherein W is a distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis, L is a size of the 2-dimensional X-ray detector along the z-axis.

5. The X-ray reflectometry apparatus according to claim 1 , wherein when the incident angle of the X-ray with respect to the sample surface is set as a range from θ′ to θ′+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the z-axis with a formula: H=W·tan θ′+L/2, wherein W is a distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis, H is a distance between the sample surface and a center of the 2-dimensional X-ray detector along the z-axis, L is a size of the 2-dimensional X-ray detector along the z-axis.

6. The X-ray reflectometry apparatus according to claim 1 , wherein when the incident angle of the X-ray with respect to the sample surface is set as a range from θ′ to θ′+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis with a formula of

W

<

L

tan

⁡

(

θ

′

+

Δθ

)

-

tan

⁢

θ

′

,

 and at the same time move on the z-axis with a formula of H=W·tan θ′+L/2, wherein W is a distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis, L is a size of the 2-dimensional X-ray detector along the z-axis, H is a distance between the sample surface and a center of the 2-dimensional X-ray detector along the z-axis.

7. The X-ray reflectometry apparatus according to claim 1 , wherein when the incident angle of the X-ray with respect to the sample surface is θ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the z-axis with a formula: H=W·tan θ, wherein W is a distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis, H is a distance between the sample surface and a center of the 2-dimensional X-ray detector along the z-axis.

8. The X-ray reflectometry apparatus according to claim 7 , wherein a moving deviation of the 2-dimensional X-ray detector on the z-axis is within ±L/2, wherein L is a size of the 2-dimensional X-ray detector along the z-axis.

9. The X-ray reflectometry apparatus according to claim 7 , wherein when the incident angle of the X-ray with respect to the sample surface is changed from θ to θ+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move with a distance ΔH on the z-axis with a formula: ΔH=W·tan(θ+Δθ)−W·tan θ.

10. The X-ray reflectometry apparatus according to claim 9 , wherein a moving deviation of the 2-dimensional X-ray detector on the z-axis is within ±L/2, wherein L is a size of the 2-dimensional X-ray detector along the z-axis.

11. The X-ray reflectometry apparatus according to claim 1 , wherein when the incident angle of the X-ray with respect to the sample surface is set to be θ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis with a formula: W=H·cot θ, wherein W is a distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis, H is a distance between the sample surface and a center of the 2-dimensional X-ray detector along the z-axis.

12. The X-ray reflectometry apparatus according to claim 11 , wherein when the incident angle of the X-ray with respect to the sample surface is changed from θ to θ+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis with a formula: W=H·cot (θ+Δθ).

13. The X-ray reflectometry apparatus according to claim 1 , wherein when the incident angle of the X-ray with respect to the sample surface is set to be θ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis within a distance range from

(

H

-

L

2

)

·

cot

⁢

θ

⁢

to

⁢

(

H

+

L

2

)

·

cot

⁢

θ

,

 wherein L is a size of the 2-dimensional X-ray detector along the z-axis, H is a distance between the sample surface and a center of the 2-dimensional X-ray detector along the z-axis,

(

H

+

L

2

)

·

cot

⁢

θ

 is a maximum distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis that the reflecting X-ray signal can arrive at the 2-dimensional X-ray detector,

(

H

-

L

2

)

·

cot

⁢

θ

 is a minimum distance between the X ray-reflection point on the sample surface and the surface of the 2-dimensional X-ray detector along the x-axis that the reflecting X-ray signal can arrive at the 2-dimensional X-ray detector.

14. The X-ray reflectometry apparatus according to claim 13 , wherein when the incident angle of the X-ray with respect to the sample surface is changed from θ to θ+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis within a distance range from

(

H

-

L

2

)

·

cot

⁢

(

θ

+

Δθ

)

⁢

to

⁢

(

H

+

L

2

)

·

cot

⁡

(

θ

+

Δθ

)

,

 wherein

(

H

+

L

2

)

·

cot

⁡

(

θ

+

Δθ

)

 is a maximum distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis that the reflecting X-ray signal can arrive at the 2-dimensional X-ray detector,

(

H

-

L

2

)

·

cot

⁢

(

θ

+

Δθ

)

 is a minimum distance between the X ray-reflection point on the sample surface and the surface of the 2-dimensional X-ray detector along the x-axis that the reflecting X-ray signal can arrive at the 2-dimensional X-ray detector.

15. A method for measuring a three-dimensional nanostructure on a flat substrate comprising:

emitting X-ray by an X-ray source;

reflecting the X-ray onto a sample surface by an X-ray reflector;

collecting a reflecting X-ray signal from the sample surface by a 2-dimensional X-ray detector; and

controlling two-axis directions of the 2-dimensional X-ray detector by a two-axis moving device to move on at least one of x-axis and z-axis with a formula concerning an incident angle of the X-ray with respect to the sample surface for collecting the reflecting X-ray signal.

16. The method according to claim 15 , wherein the two-axis moving device comprises an x-axis moving device and a z-axis moving device, wherein the x-axis moving device is configured to control the 2-dimensional X-ray detector to move on the x-axis, the z-axis moving device is configured to control the 2-dimensional X-ray detector to move on the z-axis.

17. The method according to claim 15 , further comprising rotating the 2-dimensional X-ray detector in x-z plane by a rotating device.

18. The method according to claim 15 , wherein when the incident angle of the X-ray with respect to the sample surface is set as a range from θ′ to θ′+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis with a formula:

W

<

L

tan

⁡

(

θ

′

+

Δθ

)

-

tan

⁢

θ

′

,

 wherein W is a distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis, L is a size of the 2-dimensional X-ray detector along the z-axis.

19. The method according to claim 15 , wherein when the incident angle of the X-ray with respect to the sample surface is set as a range from θ′ to θ′+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the z-axis with a formula: H=W·tan θ′+L/2, wherein W is a distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis, H is a distance between the sample surface and a center of the 2-dimensional X-ray detector along the z-axis, L is a size of the 2-dimensional X-ray detector along the z-axis.

20. The method according to claim 15 , wherein when the incident angle of the X-ray with respect to the sample surface is set as a range from θ′ to θ′+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis with a formula of

W

<

L

tan

⁡

(

θ

′

+

Δθ

)

-

tan

⁢

θ

′

,

 and at the same time move on the z-axis with a formula of H=W·tan θ′+L/2, wherein W is a distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis, L is a size of the 2-dimensional X-ray detector along the z-axis, H is a distance between the sample surface and a center of the 2-dimensional X-ray detector along the z-axis.

21. The method according to claim 15 , wherein when the incident angle of the X-ray with respect to the sample surface is θ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the z-axis with a formula: H=W·tan θ, wherein W is a distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis, H is a distance between the sample surface and a center of the 2-dimensional X-ray detector along the z-axis.

22. The method according to claim 21 , wherein a moving deviation of the 2-dimensional X-ray detector on the z-axis is within ±L/2, wherein L is a size of the 2-dimensional X-ray detector along the z-axis.

23. The method according to claim 21 , wherein when the incident angle of the X-ray with respect to the sample surface is changed from θ to θ+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move with a distance ΔH on the z-axis with a formula: ΔH=W·tan(θ+Δθ)−W·tan θ.

24. The method according to claim 23 , wherein a moving deviation of the 2-dimensional X-ray detector on the z-axis is within ±L/2, wherein L is a size of the 2-dimensional X-ray detector along the z-axis.

25. The method according to claim 15 , wherein when the incident angle of the X-ray with respect to the sample surface is set to be θ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis with a formula: W=H·cot θ, wherein W is a distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis, H is a distance between the sample surface and a center of the 2-dimensional X-ray detector along the z-axis.

26. The method according to claim 25 , wherein when the incident angle of the X-ray with respect to the sample surface is changed from θ to θ+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis with a formula: W=H·cot (θ+Δθ).

27. The method according to claim 15 , wherein when the incident angle of the X-ray with respect to the sample surface is set to be θ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis within a distance range from

(

H

-

L

2

)

·

cot

⁢

θ

⁢

to

⁢

(

H

+

L

2

)

·

cot

⁢

θ

,

 wherein L is a size of the 2-dimensional X-ray detector along the z-axis, H is a distance between the sample surface and a center of the 2-dimensional X-ray detector along the z-axis,

(

H

+

L

2

)

·

cot

⁢

θ

 is a maximum distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis that the reflecting X-ray signal can arrive at the 2-dimensional X-ray detector,

(

H

-

L

2

)

·

cot

⁢

θ

 is a minimum distance between the X ray-reflection point on the sample surface and the surface of the 2-dimensional X-ray detector along the x-axis that the reflecting X-ray signal can arrive at the 2-dimensional X-ray detector.

28. The method according to claim 27 , wherein when the incident angle of the X-ray with respect to the sample surface is changed from θ to θ+Δθ, the two-axis moving device controls the 2-dimensional X-ray detector to move on the x-axis within a distance range from

(

H

-

L

2

)

·

cot

⁢

(

θ

+

Δθ

)

⁢

to

⁢

(

H

+

L

2

)

·

cot

⁡

(

θ

+

Δθ

)

,

 wherein

(

H

+

L

2

)

·

cot

⁡

(

θ

+

Δθ

)

 is a maximum distance between a X ray-reflection point on the sample surface and a surface of the 2-dimensional X-ray detector along the x-axis that the reflecting X-ray signal can arrive at the 2-dimensional X-ray detector,

(

H

-

L

2

)

·

cot

⁢

(

θ

+

Δθ

)

 is a minimum distance between the X ray-reflection point on the sample surface and the surface of the 2-dimensional X-ray detector along the x-axis that the reflecting X-ray signal can arrive at the 2-dimensional X-ray detector.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2022
From: HE, BO-CHING; LIU, CHUN-TING; FU, WEI-EN; WU, WEN-LI
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Reel/Frame 061913/0317 →
Priority Claims (1)
TW 111134541 · Sep 13, 2022 · national
Continuity (1)
Related Publication 20240094148A1 · Mar 21, 2024
References Cited (66)
US 6771735B2 · Janik et al. · 2004 [cited by applicant]
US 6987832B2 · Koppel et al. · 2006 [cited by applicant]
US 7139365B1 · Janik · 2006 [cited by applicant]
US 7558371B2 · Park et al. · 2009 [cited by applicant]
US 8731138B2 · Yokhin et al. · 2014 [cited by applicant]
US 9588066B2 · Pois et al. · 2017 [cited by applicant]
US 9823203B2 · Yun et al. · 2017 [cited by applicant]
US 10119925B2 · Pois et al. · 2018 [cited by applicant]
US 10151713B2 · Wu et al. · 2018 [cited by applicant]
US 11036898B2 · Chouaib et al. · 2021 [cited by applicant]
US 11181489B2 · Thompson et al. · 2021 [cited by applicant]
US 11333621B2 · Wack et al. · 2022 [cited by applicant]
US 11460418B2 · Kuznetsov et al. · 2022 [cited by applicant]
US 11519719B2 · Shchegrov et al. · 2022 [cited by applicant]
US 11579099B2 · Liv et al. · 2023 [cited by applicant]
US 20030086533A1 · Janik et al. · 2003 [cited by applicant]
US 20050195941A1 · Lischka et al. · 2005 [cited by applicant]
US 20120140889A1 · Wall et al. · 2012 [cited by applicant]
US 20150204802A1 · Pois et al. · 2015 [cited by applicant]
US 20160077025A1 · Zhang et al. · 2016 [cited by applicant]
US 20160178540A1 · Yun et al. · 2016 [cited by applicant]
US 20160341674A1 · Wu et al. · 2016 [cited by applicant]
US 20170167862A1 · Dziura et al. · 2017 [cited by applicant]
US 20170176354A1 · Pois et al. · 2017 [cited by applicant]
US 20170307548A1 · Bykanov et al. · 2017 [cited by applicant]
US 20170315055A1 · Tinnemans et al. · 2017 [cited by applicant]
US 20180106735A1 · Gellineau et al. · 2018 [cited by applicant]
US 20180188192A1 · Artemiev et al. · 2018 [cited by applicant]
US 20180299259A1 · Shchegrov et al. · 2018 [cited by applicant]
US 20180350699A1 · Gellineau et al. · 2018 [cited by applicant]
US 20190017946A1 · Wack et al. · 2019 [cited by applicant]
US 20190286787A1 · Chouaib et al. · 2019 [cited by applicant]
US 20200225151A1 · Wang et al. · 2020 [cited by applicant]
US 20210063329A1 · Kuznetsov et al. · 2021 [cited by applicant]
US 20210109042A1 · Liu et al. · 2021 [cited by applicant]
US 20210239629A1 · Chuang et al. · 2021 [cited by applicant]
US 20210310968A1 · Kuznetsov et al. · 2021 [cited by applicant]
US 20220120561A1 · Liu et al. · 2022 [cited by applicant]
US 20220252395A1 · Hench et al. · 2022 [cited by applicant]
CN 104081193B · 2017 [cited by applicant]
CN 110036284A · 2019 [cited by applicant]
EP 2443651B1 · 2015 [cited by applicant]
FR 2180647A1 · 1973 [cited by applicant]
JP 201213659A · 2012 [cited by applicant]
JP 5504502B2 · 2014 [cited by applicant]
TW 201011278A · 2010 [cited by applicant]
TW I444589B · 2014 [cited by applicant]
TW 201602514A · 2016 [cited by applicant]
TW 201917348A · 2019 [cited by applicant]
TW I660154B · 2019 [cited by applicant]
TW 201946175A · 2019 [cited by applicant]
TW 1689702B · 2020 [cited by applicant]
TW 202124941A · 2021 [cited by applicant]
TW 202203281A · 2022 [cited by applicant]
TW I753490B · 2022 [cited by applicant]
WO WO2017203406A1 · 2017 [cited by applicant]
Taiwanese Office Action and Search Report for Taiwanese Application No. 112119892, dated Oct. 23, 2023. [cited by applicant]
Gin et al., “Inline metrology of high aspect ratio hole tilt using small-angle x-ray scattering,” Proceedings of SPIE, vol. 12053, 2022, 11 pages total:. [cited by applicant]
U.S. Office Action for U.S. Appl. No. 17/037,115, dated Jul. 14, 2022. [cited by applicant]
U.S. Office Action for U.S. Appl. No. 17/532,767, dated May 18, 2023. [cited by applicant]
Voegeli et al., “A quick convergent-beam laboratory X-ray reflectometer using a simultaneous multiple-angle dispersive geometry,” Journal of Applied Crystallography, vol. 50, 2017, pp. 570-575. [cited by applicant]
Freychet et al., “Estimation of Line Cross Sections Using Critical-Dimension Grazing-Incidence Small-Angle X-Ray Scattering”, Physical Review Applied, vol. 12, No. 4, 2019, pp. 044026-1-044026-8. [cited by applicant]
Lee et al., “Nanoimprint pattern transfer quality from specular x-ray reflectivity”, Applied Physics Letters, vol. 87, No. 26, 2005, pp. 263111-1-263111-3. [cited by applicant]
Lee et al., “X-ray Reflectivity Measurements of Nanoscale Structures: Limits of the Effective Medium Approximation”, American Institute of Physics Conference Proceedings, vol. 931, No. 209, 2007, pp. 209-215. [cited by applicant]
Leng et al., “Rapid X-Ray Reflectivity (XRR) characterization and Process Monitoring of Multilayer Ta/Al [cited by applicant]
Taiwanese Office Action and Search Report for Taiwanese Application No. 111134541, dated Feb. 16, 2023. [cited by applicant]