Plasma processing method and plasma ashing apparatus
Provided is a plasma processing method for selectively removing, after plasma etching using a mask having an amorphous carbon film containing boron, the amorphous carbon film using plasma from a silicon nitride film, a silicon oxide film or a tungsten film. The plasma processing method includes a removing step of removing the amorphous carbon film using plasma generated by mixed gas of O 2 gas and CH 3 F gas, or CH 2 F 2 gas.
1. A plasma processing method for selectively plasma ashing an amorphous carbon film containing boron, to a film including a silicon nitride film, a silicon oxide film or a tungsten film, the method comprising:
providing the amorphous carbon film on the film; plasma etching the film using the amorphous carbon film as a mask to generate a plasma-etched film having a pattern; a stabilization step before a removing step, the stabilization step being performed by setting the temperature of the sample stage to be the same as that in the removing step while supplying a mixed gas of O 2 gas and CH 3 F gas into a processing chamber where the removing step is performed; and performing the removing step by selectively removing the amorphous carbon film from the plasma-etched film by plasma ashing using plasma generated by the mixed gas of O 2 gas and CH 3 F gas, wherein a content of the boron in the amorphous carbon film is 50% or more, and wherein the plasma ashing is performed when a temperature of a sample stage, on which the plasma-etched film from which the amorphous carbon film is ashed is placed, is set to 80° C. to 120° C.
2. The plasma processing method according to claim 1 , wherein
the plasma ashing is performed when a temperature of the plasma-etched film, from which the amorphous carbon film is ashed, is set to 121° C. to 182° C.
3. The plasma processing method according to claim 1 , wherein
in the plasma ashing, an end of plasma ashing of the amorphous carbon film is determined using a change of a value obtained by dividing an emission intensity of a wavelength indicating OH by an emission intensity of a wavelength indicating CO with time.
4. The plasma processing method according to claim 3 , wherein
the wavelength indicating OH is 309 nm, and
the wavelength indicating CO is 451 nm.
5. The plasma processing method according to claim 1 , wherein
in the plasma ashing, processing pressure is set to be in a range of 250 Pa to 1000 Pa, a ratio of a flow rate of CH 3 F gas to a flow rate of the mixed gas is set to be in a range of 5% to 12%, and the flow rate of the mixed gas is set to be 21.5 L/min or more.
6. The plasma processing method according to claim 1 , wherein
the stabilization step is performed without generating plasma.
7. The plasma processing method according to claim 1 , wherein
a ratio of a flow rate of the CH 3 F gas to a flow rate of the mixed gas of the O 2 gas and the CH 3 F gas is a value in a range of 5% to 12%.
8. A plasma processing method for selectively plasma ashing an amorphous carbon film containing boron, to a film including a silicon nitride film or a silicon oxide film, the method comprising:
providing the amorphous carbon film on the film; plasma etching the film using the amorphous carbon film as a mask to generate a plasma-etched film having a pattern; a stabilization step before a removing step, the stabilization step being performed by setting the temperature of the sample stage to be the same as that in the removing step while supplying a mixed gas of O 2 gas and CH 2 F 2 gas into a processing chamber where the removing step is performed; and performing the removing step by selectively removing the amorphous carbon film from the plasma-etched film by plasma ashing using plasma generated by the mixed gas of O 2 gas and CH 2 F 2 gas, wherein a content of the boron in the amorphous carbon film is 50% or more, and wherein, in the plasma ashing, processing pressure is set to be in a range of 250 Pa to 550 Pa, and a ratio of a flow rate of CH 2 F 2 gas to a flow rate of the mixed gas is set to be in a range of 5% to 7.5%.
9. The plasma processing method according to claim 8 , wherein
the plasma ashing is performed when a temperature of a sample stage, on which a sample from which the amorphous carbon film is ashed is placed, is set to 20° C. to 100° C.
10. The plasma processing method according to claim 8 , wherein
in the plasma ashing, a flow rate of the mixed gas is set to be 21.5 L/min or more.
11. The plasma processing method according to claim 9 , wherein
in the plasma ashing, a flow rate of the mixed gas is set to be 21.5 L/min or more.