Embedded organic interposer for high bandwidth

1. A microelectronic device, comprising:

at least one core layer made of an inorganic material;

an interposer embedded in the at least one core layer;

at least four horizontal routing layers of conductive traces laminated in the interposer, the at least four horizontal routing layers stacked vertically with respect to each other; and

each conductive trace in each of the at least four horizontal routing layers comprising a conductor capable of providing a data transfer rate of at least 1 gigabit per second between leads of a first component of the microelectronic device and leads of a second component of the microelectronic device,

wherein the interposer comprises a layer of an organic substrate material applied over a ceramic substrate comprising the at least one core layer, the organic substrate material inlaid in cavities or impressions of the ceramic substrate, the organic substrate material alternating with the at least four horizontal routing layers built in place in an in situ stack construction of the interposer.

2. The microelectronic device of claim 1 , wherein the conductive traces are laminated as copper foil.

3. The microelectronic device of claim 1 , wherein the organic substrate material provides a dielectric between the at least four horizontal routing layers and between the conductive traces, the organic substrate material being disposed at thicknesses sufficient to lower a capacitance associated with the conductive traces at the data transfer rate of at least 1 gigabit per second.

4. The microelectronics device of claim 1 , wherein the conductive traces have a cross section of conductive material sufficient to lower or effectively eliminate an electrical resistance or eliminate an impedance of the conductive traces at the data transfer rate of at least 1 gigabit per second.

5. The microelectronic device of claim 4 , wherein the conductive traces comprise conductors capable of providing a data transfer rate of at least 28 gigabits per second; and

wherein a conductive material of the conductive traces and an organic dielectric material are respectively thick enough to reduce or eliminate a resistive-capacitive (RC) load of the conductive traces while providing the data transfer rate of at least 28 gigabits per second between the first component and the second component.

6. The microelectronics device of claim 4 , wherein the interposer is at least 6 mm long, and the conductive traces and an organic dielectric material are respectively thick enough to reduce or eliminate a resistive-capacitive (RC) load of the conductive traces while providing a data transfer rate of at least 1 gigabit per second between the first component and the second component.

7. The microelectronic device of claim 1 , further comprising at least one build-up layer above the at least one core layer and above the interposer;

the first component and the second component of the microelectronic device mounted above the at least one build-up layer;

vertical conductors connected from leads of the first component to the conductive traces of at least one horizontal routing layer of the interposer; and

vertical conductors connected from leads of the second component to respective conductive traces of the at least one horizontal routing layer of the interposer.

8. The microelectronic device of claim 1 , further comprising at least one build-up layer on both sides of the at least one core layer and on both sides of the interposer;

components mounted on both sides of the at least one core layer;

vertical conductors connecting the components mounted on both sides of the at least one core layer to the conductive traces of multiple horizontal routing layers of the interposer; and

wherein the interposer is configured to provide a communication bandwidth of 1 gigabit per second between leads of the components mounted on both sides of the at least one core layer.

9. The microelectronic device of claim 1 , further comprising a line/space pitch of the conductive traces in each of the at least four horizontal routing layers, the line/space pitch at least five times a pitch of a pinout density of the first component or the second component.

10. The microelectronic device of claim 9 , wherein the conductive traces have a tracing space within a range of 2-10 microns.

11. The microelectronic device of claim 1 , wherein each conductive trace of each of the at least four horizontal routing layers comprises copper metal, the copper metal of each conductive trace comprising a cross sectional area with dimensional factors of 2-10 microns wide for each 15 mm span of an entire length of the interposer and 1-7 microns thick for each 15 mm span of the entire length of the interposer.

12. The microelectronic device of claim 1 , further comprising a dielectric material of the interposer with a coefficient of thermal expansion (CTE) around 4 ppm/K to approximate a CTE of the inorganic material of the at least one core layer, wherein the dielectric material comprises a polymer, an epoxy, a glass-reinforced epoxy laminate, FR4, a bismaleimide-triazine (BT) resin organic material, or a composite.

13. The microelectronic device of claim 1 , wherein the interposer comprises a high bandwidth parallel bus between multiple device stacks, each device stack comprising multiple stacked dies.

14. The microelectronic device of claim 13 , wherein the interposer comprises a high bandwidth parallel bus between a logic chip and one or more high bandwidth memory modules.

15. The microelectronic device of claim 1 , wherein the interposer traverses a first die stack to connect with a second die stack behind the first die stack, without connecting with the first die stack.

16. The microelectronic device of claim 1 , wherein the cavities or impressions in the ceramic substrate, and the organic substrate material inlaid in the cavities or impressions, branch in two or more horizontal directions in the ceramic substrate.

17. An interposer, comprising:

conductive traces disposed in at least four horizontal layers, the horizontal layers stacked vertically;

a conductive material of each of the conductive traces comprising a cross sectional area large enough to provide a data transfer rate of at least 1 gigabit per second for a span of at least 6 mm with negligible conductive resistance in the conductive traces;

the conductive traces disposed in a substrate comprising a coefficient of thermal expansion (CTE) enabling the interposer to be embedded in a core substrate of a microelectronic device; and

a layer of an organic substrate material applied over a ceramic substrate comprising the core substrate, the organic substrate material inlaid in cavities or impressions of the ceramic substrate, the organic substrate material alternating with the at least four horizontal layers built in place in an in situ stack construction of the interposer.

18. The interposer of claim 17 , wherein the organic substrate material is disposed between the at least four horizontal layers and between the conductive traces in thicknesses sufficient to lower or effectively eliminate a capacitance of the conductive traces at the data transfer rate of at least 1 gigabit per second.

19. The interposer of claim 17 , wherein the conductive traces comprise copper foil etched and laminated between layers of an organic dielectric material.

20. The interposer of claim 17 , wherein the conductive traces of each of the at least four horizontal routing layers comprise copper metal, the copper metal of each conductive trace comprising a cross sectional area with dimensional factors of 2-10 microns wide for each 15 mm span of the interposer and 1-7 microns thick for each 15 mm span of the interposer.

21. The interposer of claim 17 , wherein the cavities or impressions in the ceramic substrate, and the organic substrate material inlaid in the cavities or impressions, branch in two or more horizontal directions in the ceramic substrate.