Spin-transfer torque magnetoresistive memory device with a free layer stack including multiple spacers and methods of making the same
A spin-transfer torque (STT) magnetoresistive memory device includes a first electrode, a second electrode, and a magnetic tunnel junction located between the first electrode and the second electrode. The magnetic tunnel junpction includes a reference layer having a fixed magnetization direction, a free layer stack, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer stack. The free layer stack has a total thickness of less than 2 nm, and contains in order, a proximal ferromagnetic layer located proximal to the nonmagnetic tunnel barrier layer, a first non-magnetic metal sub-monolayer, an intermediate ferromagnetic layer, a second non-magnetic metal sub-monolayer, and a distal ferromagnetic layer.
1. A spin-transfer torque (STT) magnetoresistive memory device, comprising:
a first electrode;
a second electrode; and
a magnetic tunnel junction located between the first electrode and the second electrode, the magnetic tunnel junction comprising a reference layer having a fixed magnetization direction, a free layer stack, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer stack;
wherein the free layer stack has a total thickness of less than 2 nm, and comprises, in order, a proximal ferromagnetic layer located proximal to the nonmagnetic tunnel barrier layer, a first non-magnetic metal sub-monolayer, an intermediate ferromagnetic layer, a second non-magnetic metal sub-monolayer, and a distal ferromagnetic layer;
wherein the proximal ferromagnetic layer comprises a proximal CoFeB layer, the first non-magnetic metal sub-monolayer comprises a tungsten sub-monolayer, the intermediate ferromagnetic layer comprises an intermediate CoFe or CoFeB layer, the second non-magnetic metal sub-monolayer comprises a second tungsten sub-monolayer, and the distal ferromagnetic layer comprises a distal CoFe or CoFeB layer;
further comprising a proximal CoFe layer located between the proximal CoFeB layer and the first tungsten sub-monolayer;
wherein:
the free layer stack has a total thickness of less than 1.5 nm;
the free layer stack has a total thickness in a range from 1 nm to 1.3 nm;
the proximal CoFeB layer has a thickness in a range from 3 Angstroms to 6 Angstroms;
the proximal CoFe layer has an equivalent thickness in a range from 0.6 Angstroms to 1.4 Angstroms;
the intermediate CoFe or CoFeB layer has an equivalent thickness in a range from 1.5 Angstroms to 4 Angstroms;
the distal CoFe or CoFeB layer has a thickness in a range from 2 Angstroms to 4.5 Angstroms;
the first tungsten sub-monolayer has a thickness in a range from 0.1 Angstroms to 0.5 Angstroms; and
the second tungsten sub-monolayer has a thickness in a range from 0.1 Angstroms to 0.5 Angstroms.
2. A spin-transfer torque (STT) magnetoresistive memory device, comprising:
a first electrode;
a second electrode; and
a magnetic tunnel junction located between the first electrode and the second electrode, the magnetic tunnel junction comprising a reference layer having a fixed magnetization direction, a free layer stack, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer stack;
wherein the free layer stack has a total thickness of less than 2 nm, and comprises, in order, a proximal ferromagnetic layer located proximal to the nonmagnetic tunnel barrier layer, a first non-magnetic metal sub-monolayer, an intermediate ferromagnetic layer, a second non-magnetic metal sub-monolayer, and a distal ferromagnetic layer;
wherein the proximal ferromagnetic layer comprises a proximal CoFeB layer, the first non-magnetic metal sub-monolayer comprises a tungsten sub-monolayer, the intermediate ferromagnetic layer comprises an intermediate CoFe or CoFeB layer, the second non-magnetic metal sub-monolayer comprises a second tungsten sub-monolayer, and the distal ferromagnetic layer comprises a distal CoFe or CoFeB layer;
further comprising a proximal CoFe layer located between the proximal CoFeB layer and the first tungsten sub-monolayer;
wherein the proximal CoFeB layer includes boron at an atomic concentration in a range from 10% to 30%, cobalt at an atomic concentration in a range from 12% to 20%, and iron at an atomic concentration in a range from 55% to 75%; and
wherein the proximal CoFeB layer consists essentially of Co atoms, Fe atoms, B atoms, and W atoms.
3. A method of forming a spin-transfer torque (STT) magnetoresistive memory device, comprising:
forming a reference layer having a fixed magnetization direction,
forming a nonmagnetic tunnel barrier layer over the reference layer; and
forming a free layer stack on the non-magnetic tunnel barrier layer by sequentially forming a proximal CoFeB layer, a proximal CoFe layer on the proximal CoFeB layer, a first tungsten sub-monolayer, an intermediate CoFe or CoFeB layer, a second tungsten sub-monolayer, and a distal CoFe or CoFeB layer,
wherein:
the free layer stack has a total thickness less than 2 nm;
the first tungsten sub-monolayer is formed on the proximal CoFe layer;
the free layer stack has a total thickness of less than 1.3 nm;
the proximal CoFeB layer has a thickness in a range from 3 Angstroms to 6 Angstroms;
the proximal CoFe layer has an equivalent thickness in a range from 0.6 Angstroms to 1.4 Angstroms;
the intermediate CoFe or CoFeB layer has an equivalent thickness in a range from 1.5 Angstroms to 4 Angstroms;
the distal CoFe or CoFeB layer has a thickness in a range from 2 Angstroms to 4.5 Angstroms;
the first tungsten sub-monolayer has a thickness in a range from 0.1 Angstroms to 0.5 Angstroms; and
the second tungsten sub-monolayer has a thickness in a range from 0.1 Angstroms to 0.5 Angstroms.
4. A method forming a spin-transfer torque (STT) magnetoresistive memory device, comprising:
forming a reference layer having a fixed magnetization direction,
forming a nonmagnetic tunnel barrier layer over the reference layer; and
forming a free layer stack on the non-magnetic tunnel barrier layer by sequentially forming a proximal CoFeB layer, a proximal CoFe layer on the proximal CoFeB layer, a first tungsten sub-monolayer, an intermediate CoFe or CoFeB layer, a second tungsten sub-monolayer, and a distal CoFe or CoFeB layer,
wherein:
the free layer stack has a total thickness less than 2 nm;
the first tungsten sub-monolayer is formed on the proximal CoFe layer;
the proximal CoFeB layer includes boron at an atomic concentration in a range from 10% to 30%, cobalt at an atomic concentration in a range from 12% to 20% and iron at an atomic concentration in a range from 55% to 75%; and
the proximal CoFeB layer consists essentially of Co atoms, Fe atoms, B atoms, and W atoms.
5. A method of forming a spin-transfer torque (STT) magnetoresistive memory device, comprising:
forming a reference layer having a fixed magnetization direction,
forming a nonmagnetic tunnel barrier layer over the reference layer; and
forming a free layer stack on the non-magnetic tunnel barrier layer by sequentially forming a proximal CoFeB layer, a proximal CoFe layer on the proximal CoFeB layer, a first tungsten sub-monolayer, an intermediate CoFe or CoFeB layer, a second tungsten sub-monolayer, and a distal CoFe or CoFeB layer, wherein the free layer stack has a total thickness less than 2 nm and the first tungsten sub-monolayer is formed on the proximal CoFe layer; and
further comprising:
depositing a sacrificial first magnesium layer on a top surface of the proximal CoFe layer, wherein the sacrificial first magnesium layer is removed during formation of the first tungsten sub-monolayer by tungsten atoms impinging thereupon; and
depositing a sacrificial second magnesium layer on a top surface of the intermediate CoFe or CoFeB layer, wherein the sacrificial second magnesium layer is removed during formation of the second tungsten sub-monolayer by tungsten atoms impinging thereupon.