Semiconductor apparatus, method of manufacturing semiconductor apparatus, method of designing semiconductor apparatus, and electronic apparatus
A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.
1. A semiconductor device, comprising:
a first material layer adjacent to a second material layer;
a first via passing through the first material layer and extending into the second material layer; and
a second via extending into the first material layer,
wherein,
along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.
2. The semiconductor device of claim 1 , including:
a first insulating layer in the first material layer;
a second insulating layer in the second material layer,
wherein,
the first via extends into the second insulating layer in the second material layer, and
the second via extends into the first insulating layer in the first material layer.
3. The semiconductor device of claim 1 , wherein the first via and the second via are filled with a conductive material.
4. The semiconductor device of claim 2 , wherein the first via reaches a second interconnect in the second insulating layer in the second material layer.
5. The semiconductor device of claim 2 , wherein the second via reaches a first interconnect in the first insulating layer in the first material layer.
6. The semiconductor device of claim 1 , including an on chip lens over a photodiode of the first material layer.
7. The semiconductor device of claim 6 , including an on chip color filter between the photodiode and the on chip lens.
8. The semiconductor device of claim 1 , wherein the first via has a diameter 1.5 to 10 times a diameter of the second via along the common cross section parallel to the interface between the two material layers.
9. The semiconductor device of claim 1 , wherein the first via has a diameter 3 to 4 times a diameter of the second via along the common cross section parallel to the interface between the two material layers.
10. The semiconductor device of claim 1 , wherein the device is a backside illuminated device.
11. The semiconductor device of claim 1 , wherein the first material layer is a semiconductor layer.
12. The semiconductor device of claim 1 , wherein the second material layer is a semiconductor layer.
13. The semiconductor device of claim 1 , wherein the first material layer and the second material layer are separate layers.