Charged particle beam device, and observation method and elemental analysis method using the same

1. A charged particle beam device comprising

a charged particle source;

a sample stage on which a sample is placed;

an objective lens that irradiates the sample with a charged particle beam from the charged particle source;

a deflector that deflects secondary charged particles released by irradiating the sample with the charged particle beam;

a detector that detects the secondary charged particles deflected by the deflector;

a sample voltage control unit that applies a positive voltage to the sample or the sample stage; and

a deflection intensity control unit that controls an intensity with which the deflector deflects the secondary charged particles.

2. The charged particle beam device according to claim 1 , wherein

the detector detects the secondary charged particles in an energy range determined by the positive voltage applied to the sample or the sample stage by the sample voltage control unit and the intensity of deflecting the secondary charged particles controlled by the deflection intensity control unit.

3. The charged particle beam device according to claim 2 , further comprising:

an image formation control unit that forms an image based on the secondary charged particles detected by the detector.

4. The charged particle beam device according to claim 2 , wherein

the secondary charged particle is a secondary electron having an energy of 50 eV or less when the sample or the sample stage is at a reference potential.

5. The charged particle beam device according to claim 1 , further comprising:

an extraction electrode that extracts charged particles from the charged particle source; and

an acceleration electrode that accelerates the charged particles, wherein

the acceleration electrode is used as a reference potential.

6. The charged particle beam device according to claim 1 , further comprising:

a scanner that deflects the charged particle beam; and

a control device, wherein

the control device controls the objective lens and/or the scanner in order to correct a positional deviation in a plane direction of a focal point of the charged particle beam and/or a focus deviation in an optical axis direction, generated according to the positive voltage applied to the sample or the sample stage by the sample voltage control unit and the intensity of deflecting the secondary charged particles controlled by the deflection intensity control unit.

7. An observation method of a sample having a plurality of composition areas, using a charged particle beam device, wherein

in the charged particle beam device, a positive voltage applied to the sample or a sample stage on which the sample is placed, and an intensity of a deflector for deflecting secondary charged particles released by irradiating the sample with a charged particle beam toward a detector are variable, and

the observation method comprises:

measuring a detected amount of the secondary charged particles detected by the detector by changing the positive voltage and the intensity of the deflector with respect to a first area of the sample having a first composition;

measuring a detected amount of the secondary charged particles detected by the detector by changing the positive voltage and the intensity of the deflector with respect to a second area of the sample having a second composition; and

forming a secondary charged particle image of the sample including the first area and the second area by the positive voltage and the intensity of the deflector that are determined based on a difference between the detected amount of the secondary charged particles for the first area and the detected amount of the secondary charged particles for the second area.

8. The observation method according to claim 7 , further comprising:

forming a secondary charged particle image of the sample including the first area and the second area by the positive voltage and the intensity of the deflector that maximize the difference between the detected amount of the secondary charged particles for the first area and the detected amount of the secondary charged particles for the second area.

9. The observation method according to claim 7 , wherein

the secondary charged particle is a secondary electron having an energy of 50 eV or less when the sample or the sample stage is at a reference potential.

10. An elemental analysis method of a sample, using a charged particle beam device, wherein

in the charged particle beam device, a reference secondary charged particle spectrum for each element is held in advance, and a positive voltage applied to the sample or a sample stage on which the sample is placed and an intensity of a deflector for deflecting secondary charged particles released by irradiating the sample with a charged particle beam toward a detector are variable, and

the elemental analysis method comprises:

setting the intensity of the deflector to a predetermined value;

changing the positive voltage and measuring a detected amount of the secondary charged particles detected by the detector to create a secondary charged particle spectrum; and

identifying an element by comparing the created secondary charged particle spectrum with the reference secondary charged particle spectrum.

11. The elemental analysis method according to claim 10 , further comprising:

displaying the created secondary charged particle spectrum on an image display device.

12. The elemental analysis method according to claim 10 , further comprising:

setting the intensity of the deflector so that the detected amount of the secondary charged particles detected by the detector becomes a minimum value satisfying a predetermined level.

13. The elemental analysis method according to claim 10 , wherein

the secondary charged particle is a secondary electron having an energy of 50 eV or less when the sample or the sample stage is at a reference potential.