Display with light-emitting diodes
A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.
1. A pixel circuit comprising:
a positive power supply terminal;
a ground power supply terminal;
a light-emitting diode that is connected between the positive power supply terminal and the ground power supply terminal;
a silicon drive transistor that is connected in series with the light-emitting diode;
a first silicon emission transistor that is connected in series with the drive transistor and the light-emitting diode, wherein the first silicon emission transistor is interposed between the light-emitting diode and the silicon drive transistor;
a semiconducting-oxide switching transistor that is coupled to a gate of the silicon drive transistor; and
a second silicon emission transistor that is interposed between the silicon drive transistor and the positive power supply terminal.
2. The pixel circuit defined in claim 1 , wherein the semiconducting-oxide switching transistor is coupled between the gate of the silicon drive transistor and a signal line.
3. The pixel circuit defined in claim 1 , further comprising a capacitor that is coupled to the gate of the silicon drive transistor.
4. The pixel circuit defined in claim 3 , wherein the capacitor is coupled between the gate of the silicon drive transistor and the positive power supply terminal.
5. The pixel circuit defined in claim 1 , further comprising:
a silicon switching transistor that is coupled to an anode of the light-emitting diode.
6. The pixel circuit defined in claim 5 , wherein the silicon switching transistor is coupled between the anode of the light-emitting diode and a signal line.
7. The pixel circuit defined in claim 1 , further comprising:
a capacitor that is coupled between the gate of the silicon drive transistor and the positive power supply terminal; and
a silicon switching transistor that is coupled between an anode of the light-emitting diode and a signal line.
8. The pixel circuit defined in claim 1 , further comprising:
a silicon switching transistor that is coupled to a node that is interposed between the silicon drive transistor and the second silicon emission transistor.
9. The pixel circuit defined in claim 8 , wherein the silicon switching transistor is coupled between the node and a data line.
10. The pixel circuit defined in claim 1 , further comprising:
a silicon switching transistor that is coupled between a source of the silicon drive transistor and a data line.
11. The pixel circuit defined in claim 10 , wherein the silicon switching transistor is a first silicon switching transistor and wherein the pixel circuit further comprises:
a second silicon switching transistor that is coupled between an anode of the light-emitting diode and a signal line.
12. The pixel circuit defined in claim 1 , wherein the first silicon emission transistor is a first p-channel silicon emission transistor, wherein the silicon drive transistor is a p-channel silicon drive transistor, wherein the semiconducting-oxide switching transistor is an re-channel semiconducting-oxide switching transistor, wherein the second silicon emission transistor is a second p-channel silicon emission transistor, and wherein the pixel circuit further comprises:
a p-channel silicon switching transistor that is coupled between a source of the p-channel silicon drive transistor and a data line; and
a capacitor that is coupled to the gate of the p-channel silicon drive transistor.
13. The pixel circuit defined in claim 1 , wherein the first silicon emission transistor is a first p-channel silicon emission transistor, wherein the silicon drive transistor is a p-channel silicon drive transistor, wherein the semiconducting-oxide switching transistor is an re-channel semiconducting-oxide switching transistor, wherein the second silicon emission transistor is a second p-channel silicon emission transistor, and wherein the pixel circuit further comprises:
a first p-channel silicon switching transistor that is coupled between a source of the p-channel silicon drive transistor and a first signal line;
a capacitor that is coupled to the gate of the p-channel silicon drive transistor; and
a second p-channel silicon switching transistor that is coupled between an anode of the light-emitting diode and a second signal line.
14. A pixel circuit comprising:
a first power supply terminal;
a second power supply terminal;
a first silicon emission transistor, a silicon drive transistor, a second silicon emission transistor, and a light-emitting diode that are connected in series between the first power supply terminal and the second power supply terminal;
a semiconducting-oxide switching transistor that is coupled to a gate of the silicon drive transistor;
a first silicon switching transistor that is coupled between a source of the silicon drive transistor and a first signal line; and
a second silicon switching transistor that is coupled between an anode of the light-emitting diode and a second signal line.
15. The pixel circuit defined in claim 14 , wherein the first silicon emission transistor is a first p-channel silicon emission transistor, wherein the silicon drive transistor is a p-channel silicon drive transistor, wherein the second silicon emission transistor is a second p-channel silicon emission transistor, wherein the semiconducting-oxide switching transistor is an n-channel semiconducting-oxide switching transistor, wherein the first silicon switching transistor is a first p-channel silicon switching transistor, wherein the second silicon switching transistor is a second p-channel silicon switching transistor, and wherein the first signal line is a data line.
16. The pixel circuit defined in claim 14 , further comprising:
a capacitor that is coupled to the gate of the silicon drive transistor.
17. A pixel circuit comprising:
a first power supply terminal;
a second power supply terminal;
a p-channel silicon drive transistor, a p-channel silicon emission transistor, and a light-emitting diode that are connected in series between the first power supply terminal and the second power supply terminal;
an n-channel semiconducting-oxide switching transistor that is coupled to a gate of the p-channel silicon drive transistor;
a capacitor that is coupled between the gate of the p-channel silicon drive transistor and the first power supply terminal; and
a p-channel silicon switching transistor that is coupled between an anode of the light-emitting diode and a signal line.
18. The pixel circuit defined in claim 17 , wherein the n-channel semiconducting-oxide switching transistor is coupled between the gate of the p-channel silicon drive transistor and a signal line.