Display and electronic device including the display
A novel display is provided. A display having a small change in chromaticity of a micro light-emitting diode in proportion to current density is provided. A display capable of reducing power consumption in the driver circuit when displaying a still image is provided. The display includes a plurality of pixels each including a display element and a microcontroller. The microcontroller includes a first transistor, a triangular wave generator circuit, a comparator, a switch, and a constant current circuit. The first transistor has a function of retaining a potential corresponding to data written to the pixel by being switched off. The triangular wave generator circuit has a function of generating a triangular wave signal. The comparator has a function of generating an output signal corresponding to the potential and the triangular wave signal. The switch has a function of controlling whether or not to make a current flowing in the constant current circuit flow to the display element in accordance with the output signal.
1. A display device comprising:
a pixel,
wherein the pixel comprises a micro light-emitting diode, a first transistor, a second transistor, and a third transistor,
wherein one of a source and a drain of the first transistor is electrically connected to the micro light-emitting diode,
wherein the other of the source and the drain of the first transistor is electrically connected to a wiring,
wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to a gate of the third transistor, and
wherein one of a source and a drain of the third transistor is electrically connected to the wiring.
2. The display device according to claim 1 ,
wherein the second transistor comprises an oxide semiconductor in a channel formation region.
3. The display device according to claim 2 ,
wherein the first transistor and the third transistor each comprises silicon in a channel formation region.
4. The display device according to claim 1 ,
wherein a triangle wave is input to the pixel.
5. The display device according to claim 1 ,
wherein the gate of the first transistor is directly connected to the one of the source and the drain of the second transistor, and
wherein the other of the source and the drain of the second transistor is directly connected to the gate of the third transistor.
6. A display device comprising:
a pixel,
wherein the pixel comprises a micro light-emitting diode, a first transistor, a second transistor, a third transistor, and a fourth transistor,
wherein one of a source and a drain of the first transistor is electrically connected to the micro light-emitting diode,
wherein the other of the source and the drain of the first transistor is electrically connected to a first wiring,
wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to a gate of the third transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the fourth transistor,
wherein a gate of the second transistor is electrically connected to a second wiring,
wherein one of a source and a drain of the third transistor is electrically connected to the first wiring, and
wherein a gate of the fourth transistor is electrically connected to the second wiring.
7. The display device according to claim 6 ,
wherein the second transistor and the fourth transistor each comprises an oxide semiconductor in a channel formation region.
8. The display device according to claim 7 ,
wherein the first transistor and the third transistor each comprises silicon in a channel formation region.
9. The display device according to claim 6 ,
wherein a triangle wave is input to the pixel.
10. The display device according to claim 6 ,
wherein the gate of the first transistor is directly connected to the one of the source and the drain of the second transistor, and
wherein the other of the source and the drain of the second transistor is directly connected to the gate of the third transistor.
11. A display device comprising:
a pixel,
wherein the pixel comprises a micro light-emitting diode, a first transistor, a second transistor, a third transistor, and a fourth transistor,
wherein one of a source and a drain of the first transistor is electrically connected to the micro light-emitting diode,
wherein the other of the source and the drain of the first transistor is electrically connected to a first wiring,
wherein a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to a gate of the third transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the third transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the fourth transistor,
wherein a gate of the second transistor is electrically connected to a second wiring,
wherein one of a source and a drain of the third transistor is electrically connected to the first wiring, and
wherein a gate of the fourth transistor is electrically connected to the second wiring.
12. The display device according to claim 11 ,
wherein the second transistor and the fourth transistor each comprises an oxide semiconductor in a channel formation region.
13. The display device according to claim 12 ,
wherein the first transistor and the third transistor each comprises silicon in a channel formation region.
14. The display device according to claim 11 ,
wherein a triangle wave is input to the pixel.
15. The display device according to claim 11 ,
wherein the gate of the first transistor is directly connected to the one of the source and the drain of the second transistor, and
wherein the other of the source and the drain of the second transistor is directly connected to the gate of the third transistor.