Light-emitting diode and method for manufacturing the same

1. A method for manufacturing a light-emitting diode (LED), the method comprising:

forming a first type semiconductor layer;

forming a second type semiconductor layer on the first type semiconductor layer; and

implanting an impurity into a first portion of the second type semiconductor layer and spacing the implanted impurity apart from the first type semiconductor layer, wherein the concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.

2. The method of claim 1 , wherein the impurity comprises silicon, oxygen, germanium, titanium, or combinations thereof.

3. The method of claim 2 , wherein the implanting comprises an ion implantation process, wherein the ion implantation process comprises:

forming a protection layer to cover the second portion of the second type semiconductor layer; and

applying an ion beam to the second type semiconductor layer, wherein the ion beam comprises silicon ions, oxygen ions, and germanium ions, titanium ions, or combinations thereof.

4. The method of claim 2 , wherein the implanting comprises post diffusing the impurity into the first portion of the second type semiconductor layer.

5. The method of claim 4 , wherein the post diffusing comprises:

forming a protection layer on the second portion of the second type semiconductor layer; and

applying a gaseous agent to the second type semiconductor layer to perform the post diffusing, wherein the gaseous agent comprises the impurity.

6. The method of claim 4 , wherein the post diffusing comprises:

forming a protection layer on the second portion of the second type semiconductor layer; and

applying a fluid agent to the second type semiconductor layer to perform the post diffusing, wherein the fluid agent comprises the impurity.

7. The method of claim 4 , wherein the post diffusing comprises:

forming a cap layer on the first portion of the second type semiconductor layer, wherein the cap layer comprises the impurity; and

diffusing the impurity from the cap layer into the first portion of the second type semiconductor layer.

8. The method of claim 7 , wherein the forming the cap layer on the first portion of the second type semiconductor layer comprises:

forming the cap layer with a hole, wherein a vertical projection of the hole of the cap layer on the second type semiconductor layer at least partially overlaps with the second portion of the second type semiconductor layer.

9. The method of claim 7 , wherein the post diffusing is performed by heating a combination of the second type semiconductor layer and the cap layer.

10. The method of claim 7 , further comprising:

removing the cap layer from the second type semiconductor layer.

11. The method of claim 7 , further comprising:

forming an electrode layer on a combination of the second type semiconductor layer and the cap layer.

12. The method of claim 2 , further comprising:

forming a current control layer joined with the first type semiconductor layer, the second type semiconductor layer, or combinations thereof, wherein the current control layer has an opening, and a vertical projection of the opening on the second type semiconductor layer at least partially overlaps with the second portion.

13. The method of claim 2 , wherein the first type semiconductor layer is an N-type semiconductor layer, the second type semiconductor layer is a P-type semiconductor layer, and the method further comprises:

forming an active layer between the first type semiconductor layer and the second type semiconductor layer.