IP Library Granted Patent US 12,205,979
Granted Patent B2
US 12,205,979 · App. 18/236,029 · Granted Jan 21, 2025

Functional panel, display device, input/output device, and data processing device

Inventors: Shunpei Yamazaki (Tokyo, JP); Takayuki Ikeda (Kanagawa, JP)
Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
H01L27/156G06F3/041G09G3/32H01L25/18G06F3/013G06F3/02G06F3/16G09G2354/00G09G2360/144
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Quick Facts
Patent No.
US 12,205,979
App. No.
18/236,029
Granted
Jan 21, 2025
Kind
B2
Abstract

A novel functional panel that is highly convenient or highly reliable is provided. The functional panel includes a first pixel. The first pixel includes a first element, a color conversion layer, and a first functional layer. The first functional layer is positioned between the first element and the color conversion layer. The first element has a function of emitting light and contains gallium nitride. The color conversion layer has a function of converting the color of light emitted from the first element into a different color. The first functional layer includes a first insulating film and a pixel circuit. The first insulating film includes a region positioned between the pixel circuit and the first element, and has an opening. The pixel circuit includes a first transistor. The first transistor includes a first oxide semiconductor film and is electrically connected to the first element through the opening.

Claims (73)

1. A display device comprising:

a light-emitting diode;

a first insulating layer comprising an opening over the light-emitting diode;

a pixel circuit comprising a first transistor over the first insulating layer;

a second insulating layer over the pixel circuit; and

a first driver circuit and a second driver circuit over the second insulating layer,

wherein the light-emitting diode comprises:

a first electrode;

a second electrode; and

a layer containing a light-emitting material between the first electrode and the second electrode,

wherein the first transistor is electrically connected to the light-emitting diode through the opening,

wherein the first transistor comprises:

a first oxide semiconductor layer;

a first conductive layer electrically connected to the first oxide semiconductor layer;

a second conductive layer electrically connected to the first oxide semiconductor layer;

a gate insulating layer over the first oxide semiconductor layer and between the first conductive layer and the second conductive layer; and

a first gate electrode over the gate insulating layer,

wherein the gate insulating layer is in contact with a side surface and a bottom surface of the first gate electrode,

wherein the first driver circuit and the second driver circuit are electrically connected to the pixel circuit,

wherein the pixel circuit overlaps with the light-emitting diode,

wherein the first driver circuit overlaps with the pixel circuit, and

wherein the second driver circuit does not overlap with the pixel circuit.

2. The display device according to claim 1 , wherein the layer containing the light-emitting material comprises gallium nitride.

3. The display device according to claim 1 , wherein the light-emitting diode is a quantum dot light-emitting diode.

4. The display device according to claim 1 ,

wherein the first driver circuit comprises a second transistor, and

wherein the second transistor comprises a semiconductor containing a Group 14 element.

5. The display device according to claim 1 ,

wherein the second driver circuit comprises a third transistor, and

wherein the third transistor comprises a second oxide semiconductor layer.

6. The display device according to claim 1 ,

wherein the first driver circuit comprises a second transistor,

wherein the second driver circuit comprises a third transistor, and

wherein the second transistor and the third transistor comprise a semiconductor containing a Group 14 element.

7. The display device according to claim 1 , wherein the second insulating layer comprises silicon and nitrogen.

8. The display device according to claim 1 , further comprising a color conversion layer, and

wherein the color conversion layer is configured to convert a color of light emitted from the light-emitting diode into a different color.

9. The display device according to claim 1 ,

wherein the first transistor comprises a second gate electrode under the first oxide semiconductor layer, and

wherein the first gate electrode and the second gate electrode overlap with each other.

10. The display device according to claim 1 , wherein the first transistor is not included in the first driver circuit and the second driver circuit.

11. A display device comprising:

a light-emitting diode;

a first insulating layer comprising an opening over the light-emitting diode;

a pixel circuit comprising a first transistor over the first insulating layer;

a second insulating layer over the pixel circuit; and

a first driver circuit and a second driver circuit over the second insulating layer,

wherein the light-emitting diode comprises:

a first electrode;

a second electrode; and

a layer containing a light-emitting material between the first electrode and the second electrode,

wherein the first transistor is electrically connected to the light-emitting diode through the opening,

wherein the first driver circuit and the second driver circuit are electrically connected to the pixel circuit,

wherein the pixel circuit overlaps with the light-emitting diode,

wherein the first driver circuit overlaps with the pixel circuit, and

wherein the second driver circuit does not overlap with the pixel circuit.

12. The display device according to claim 11 , wherein the layer containing the light-emitting material comprises gallium nitride.

13. The display device according to claim 11 , wherein the light-emitting diode is a quantum dot light-emitting diode.

14. The display device according to claim 11 , wherein the first transistor comprises a first oxide semiconductor layer.

15. The display device according to claim 11 ,

wherein the first driver circuit comprises a second transistor, and

wherein the second transistor comprises a semiconductor containing a Group 14 element.

16. The display device according to claim 11 ,

wherein the second driver circuit comprises a third transistor, and

wherein the third transistor comprises a second oxide semiconductor layer.

17. The display device according to claim 11 ,

wherein the first driver circuit comprises a second transistor,

wherein the second driver circuit comprises a third transistor, and

wherein the second transistor and the third transistor comprise a semiconductor containing a Group 14 element.

18. The display device according to claim 11 , wherein the second insulating layer comprises silicon and nitrogen.

19. The display device according to claim 11 , further comprising a color conversion layer, and

wherein the color conversion layer is configured to convert a color of light emitted from the light-emitting diode into a different color.

20. The display device according to claim 11 , wherein the first transistor is not included in the first driver circuit and the second driver circuit.

Priority Claims (2)
JP 2019-205057 · Nov 12, 2019 · national
JP 2019-210593 · Nov 21, 2019 · national
Continuity (3)
Continuation 17885761 · Aug 11, 2022
Continuation 17094660 · Nov 10, 2020
Related Publication 20240128302A1 · Apr 18, 2024
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