Memory system having dies and operating method of the memory system outputting a command in response to a status of a selected die
A memory system includes: a plurality of dies including a plurality of memory blocks; and a memory controller for outputting a normal program command when a die including a selected memory block is a normal die having an electrical characteristic higher than or equal to a reference value in a program operation, and outputting a partial program command and a partial erase command when the die including the selected memory block is a low status die having an electrical characteristic lower than the reference value.
1. A method for operating a memory system, the method comprising:
performing a test program operation of dies;
storing addresses of the dies, in a low status die table, having a program disturbance greater than a reference value in response to a result of the test program operation;
determining whether a die address of a die including a selected memory block is stored in the low status die table in a first program operation;
outputting a normal program command to a selected die for sequentially programming pages up to a last page of the selected memory block when a selected address for the first program operation is not included in the low status die table;
outputting a partial program command to the selected die for sequentially programming pages up to a set page of the selected memory block and a partial erase command to the selected die for erasing pages in an erase state, when the die address of the die including the selected memory block is included in the low status die table;
programming a first closest memory cell from a bit line in the selected die;
programming a first closest memory cell from a source line after the first closest memory cell from the bit line is programmed;
programming a second memory cell from the bit line after the first closest memory cell from the source line is programmed;
programming a second memory cell from the source line after the second memory cell from the bit line is programmed;
programming an N th memory cell from the bit line after the second memory cell from the source line is programmed, wherein the N th memory cell from the bit line is included in the set page;
programming an N th memory cell from the source line after the N th memory cell from the bit line is programmed, wherein the N th memory cell from the source line is included in the set page;
erasing memory cells coupled between the N th memory cell from the source line and the Nth memory cell from the bit line; and
programming the erased memory cells.
2. The method of claim 1 , wherein, in response to the partial program command and the partial erase command, each of the dies:
sequentially programs pages included between a bit line and the set page;
erases pages included between the set page and a source select line; and
sequentially program pages included between the set page and the source select line.
3. The method of claim 2 , wherein the set page is set as a page in which program disturb starts increasing.