Systems and methods for monitoring copper corrosion in an integrated circuit device
Systems and methods for monitoring copper corrosion in an integrated circuit (IC) device are disclosed. A corrosion-sensitive structure formed in the IC device may include a p-type active region adjacent an n-type active region to define a p-n junction space charge region. A copper region formed over the silicon may be connected to both the p-region and n-region by respective contacts, to thereby define a short circuit. Light incident on the p-n junction space charge region, e.g., during a CMP process, creates a current flow through the metal region via the short circuit, which drives chemical reactions that cause corrosion in the copper region. Due to the short circuit configuration, the copper region is highly sensitive to corrosion. The corrosion-sensitive structure may be arranged with less corrosion-sensitive copper structures in the IC device, with the corrosion-sensitive structure used as a proxy to monitor for copper corrosion in the IC device.
1. An integrated circuit device, comprising:
a corrosion monitoring system comprising:
a p-type active region adjacent an n-type active region to define a p-n junction space charge region;
a first conductive contact directly connected to the p-type active region, and a second conductive contact directly connected to the n-type active region; and
a metal region connected to both the first conductive contact and the second conductive contact, to thereby define a short circuit;
wherein incident light on the p-n junction space charge region creates a current flow through the metal region via the short circuit, which drives chemical reactions that cause corrosion in the metal region.
2. The integrated circuit device of claim 1 , wherein the metal region comprises a copper region.
3. The integrated circuit device of claim 1 , wherein:
the metal region of the corrosion monitoring system is a copper region; and
the integrated circuit device a plurality of other copper structures;
wherein the copper region of the corrosion monitoring systems is more susceptible to corrosion than the other copper structures.
4. The integrated circuit device of claim 1 , further comprising, in addition to the corrosion monitoring system:
a plurality of integrated circuit (IC) structures, each IC structure comprising:
an IC structure p-type active region adjacent an IC structure n-type active region to define an IC structure p-n junction space charge region;
a first IC structure conductive contact connected to the IC structure p-type active region, and a second IC structure conductive contact connected to the IC structure n-type active region; and
a first IC structure metal region coupled to the first IC structure conductive contact and a second IC structure metal region connected to the second IC structure conductive contact and physically discrete from the first IC structure metal region;
wherein incident light on the IC structure p-n junction space charge region of the respective IC structure creates a current flow through the first and second IC structure metal regions, which drives chemical reactions that cause corrosion at respective surfaces of the first and second IC structure metal regions;
wherein the corrosion at the respective surfaces of the first and second IC structure metal regions of the respective IC structure is less severe than the corrosion in the metal region of the corrosion monitoring system.
5. The integrated circuit device of claim 1 , wherein the corrosion monitoring system comprises:
at least two p-type active regions and at least two p-type active regions arranged in an alternating manner to define at least two p-n junction space charge regions; and
a first conductive contact connected to each p-type active region, and a second conductive contact connected to each n-type active region;
wherein the metal region is connected to both the first conductive contacts connected to each p-type active region and the second conductive contacts connected to each n-type active region.
6. The integrated circuit device of claim 1 , wherein the corrosion monitoring system comprises:
a first conductive probe region for connection to a current source to supply a constant current through the metal region, the first conductive probe region comprising a region of the metal region or connected to the metal region at a first location; and
a second conductive probe region of the metal region or connected to the metal region at a second location.
7. The integrated circuit device of claim 6 , wherein:
the first conductive probe region is connected to the metal region at the first location by a first vertically-extending contact or via; and
the second conductive probe region is connected to the metal region at the second location by a second vertically-extending contact or via.
8. The integrated circuit device of claim 1 , wherein the first conductive contact is directly connected to the p-type active region, and the second conductive contact is directly connected to the n-type active region.
9. An integrated circuit device, comprising:
a corrosion monitoring system comprising:
a p-type active region adjacent an n-type active region to define a p-n junction space charge region;
a first conductive contact connected to the p-type active region, and a second conductive contact connected to the n-type active region; and
a metal region connected to both the first conductive contact and the second conductive contact, to thereby define a short circuit;
wherein incident light on the p-n junction space charge region creates a current flow through the metal region via the short circuit, which drives chemical reactions that cause corrosion in the metal region;
a current source connected to the metal re 2 ion to supply a current to the metal region;
a voltage detection circuitry to measure a voltage drop across the metal region; and
a corrosion analysis circuitry to calculate a resistance or other measure of corrosion in the metal region based at least on (a) the current in the metal region and (b) the voltage drop across the metal re 2 ion.
10. The integrated circuit device of claim 9 , wherein the current source is separate from the p-n junction space charge region and supplies the current as a constant current across the metal region.
11. The integrated circuit device of Claim 9 , wherein the current source and voltage detection circuitry are connected directly to the metal region.
12. The integrated circuit device of Claim 9 , wherein the current source and voltage detection circuitry are connected to contact regions located in a different metal layer than the metal region and connected to the metal region by vertically-extending conductive contacts.
13. The integrated circuit device of claim 9 , wherein the first conductive contact is directly connected to the p-type active region, and the second conductive contact is directly connected to the n-type active region.