Flash memory controller
A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.
1. A method for controlling a flash memory module, wherein the flash memory module comprises a plurality of blocks, and the method comprising:
receiving data from a host device; and
determining if a file type, a file extension or a logical address of the data satisfies a criteria;
if it is determined that the file type, the file extension or the logical address of the data satisfies the criteria, using only two of program threshold voltage intervals to write the data into one of the blocks;
if it is determined that the file type, the file extension or the logical address of the data does not satisfy the criteria, referring to an amount of stored data in the flash memory module to select at least a portion of the program threshold voltage intervals to write the data into the one of the blocks.
2. The method of claim 1 , wherein the plurality of data blocks are realized by triple-level cells (TLCs), and the blocks supports eight plurality of program threshold voltage intervals.
3. The method of claim 1 , wherein the step of referring to the amount of the stored data in the flash memory module to select at least a portion of the program threshold voltage intervals to write the data into the one of the blocks comprises:
if the amount of stored data in the flash memory module is less than a first threshold, using only two of the program threshold voltage intervals to write the data into one of the blocks; and
if the amount of stored data in the flash memory module is greater than the first threshold, using at least four of the program threshold voltage intervals to write the data into the one of the blocks.
4. The method of claim 3 , wherein the step of using only two of the program threshold voltage intervals to write the data into one of the blocks comprises:
if the amount of stored data in the flash memory module is less than the first threshold, using only the lowest two of program threshold voltage intervals to write the data into the one of the blocks.
5. The method of claim 3 , wherein the step of using at least four of the program threshold voltage intervals to write the data into the one of the blocks comprises:
if the amount of stored data in the flash memory module is greater than the first threshold, using only the lowest four of the program threshold voltage intervals to write the data into the one of the blocks.
6. A flash memory controller for controlling a flash memory module, wherein the flash memory module comprises a read and write circuit and a plurality of data blocks, the flash memory controller comprising:
a communication interface for receiving data from a host device; and
a processing circuit, coupled with the communication interface and the flash memory module, for receiving data from a host device, determining if a file type, a file extension or a logical address of the data satisfies a criteria;
and if it is determined that the file type, the file extension or the logical address of the data satisfies the criteria, using only two of program threshold voltage intervals to write the data into one of the blocks; and if it is determined that the file type, the file extension or the logical address of the data does not satisfy the criteria, referring to an amount of stored data in the flash memory module to select at least a portion of the program threshold voltage intervals to write the data into the one of the blocks.
7. The flash memory controller of claim 6 , wherein the plurality of data blocks are realized by triple-level cells (TLCs), and the blocks supports eight plurality of program threshold voltage intervals.
8. The flash memory controller of claim 6 , wherein if the amount of stored data in the flash memory module is less than a first threshold, the processing circuit uses only two of the program threshold voltage intervals to write the data into one of the blocks; and if the amount of stored data in the flash memory module is greater than the first threshold, the processing circuit uses at least four of the program threshold voltage intervals to write the data into the one of the blocks.
9. The flash memory controller of claim 8 , wherein if the amount of stored data in the flash memory module is less than the first threshold, the processing circuit uses only the lowest two of program threshold voltage intervals to write the data into the one of the blocks.
10. The flash memory controller of claim 8 , wherein if the amount of stored data in the flash memory module is greater than the first threshold, the processing circuit uses only the lowest four of the program threshold voltage intervals to write the data into the one of the blocks.