Light emitting structure
A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.
1. A display comprising:
a display substrate;
a plurality of bottom conductive layers on the display substrate;
a plurality of groups of LED devices connected to the plurality of bottom conductive layers, each group of LED devices connected to a corresponding bottom conductive layer;
a passivation layer spanning across the display substrate and laterally surrounding each LED device in the plurality of groups of LED devices such that each LED device is embedded within the passivation layer; and
a plurality of transparent top conductive layers directly over the passivation layer and in contact with the plurality of groups of LEDs.
2. The display substrate of claim 1 , wherein each transparent top conductive layer is in electrical contact with more than one LED device of the plurality of groups of LED devices.
3. The display substrate of claim 1 , wherein each transparent top conductive layer is in electrical contact with an LED device for each group of LED devices.
4. The display substrate of claim 3 , wherein each group of LED devices comprises a pixel group.
5. The display of claim 1 , wherein the passivation layer is a thermoset material.
6. The display of claim 1 , wherein the passivation is transparent.
7. The display of claim 1 , wherein the plurality of groups of LED devices is connected to the plurality of bottom conductive layers with a corresponding plurality of bonding layers.
8. The display of claim 7 , wherein each bonding layer in the plurality of bonding layers an alloy bonding layer.
9. The display of claim 1 , wherein the display substrate has a pixel density of greater than 300 pixels per inch.
10. The display of claim 1 , wherein each LED device has a maximum width of 1 to 100 μm.
11. The display of claim 1 , wherein each LED device has a maximum width of 1 to 10 μm.
12. The display of claim 1 , wherein each LED device has a top doped layer, a lower doped layer, and a quantum well layer between the top doped layer and the lower doped layer.
13. The display of claim 1 , wherein the display substrate includes passive matrix display circuitry.
14. The display of claim 1 , wherein the plurality of groups of LED devices includes a first group of LED devices designed to emit a first color, and a second group of LED devices designed to emit a second color different from the first color.
15. The display of claim 1 , wherein the plurality of transparent top conductive layers are formed of a transparent conductive oxide material.