Color stable multicolor OLED device structures
The present invention relates to OLED devices and stacks for OLED devices that include a symmetric emissive-layer architecture. In one embodiment, the present invention relates to an emissive stack having three layers, wherein the top and bottom layers emit light in the same or similar color region while the middle layer emits light in a different color region than the other two layers. In such an embodiment, the three layers are in contact with each other with no other layers in between. The symmetric emissive-layer architecture of the present invention can be used to improve the color stability of OLED devices.
1 . An organic light emitting device, comprising:
a first electrode;
a hole transport layer disposed over the first electrode;
an emissive stack disposed over the first electrode, the emissive stack comprising:
a first emissive layer comprising a first host material having a lowest unoccupied molecular orbital (LUMO) LUMO(H1) and a first emissive material having a LUMO energy level LUMO(D1) that emits a first color;
a second emissive layer in direct physical contact with the first emissive layer, the second emissive layer comprising a second host material having a LUMO energy level LUMO(H 2 ) and a second emissive material having a LUMO energy level LUMO(D2) that emits a second color, wherein the second color is different than the first color; and
a third emissive layer in direct physical contact with the second emissive layer and comprising a third host material having a LUMO energy level LUMO(H3) and a third emissive material, different than the first emissive material, having a LUMO energy level LUMO(D3) that emits the first color;
an electron transport layer disposed over the emissive stack; and
a second electrode disposed over the emissive stack;
wherein:
LUMO(H1)<LUMO(D1); and
LUMO(H2)−LUMO(D2)<LUMO(H1)−LUMO(D1).
2 . The device of claim 1 , wherein the first emissive layer emits light having a first peak wavelength and the third emissive layer emits light having a second peak wavelength within not more than 10 nm of the first peak wavelength.
3 . The device of claim 2 , wherein the second peak wavelength is within 5 nm of the first peak wavelength.
4 . The device of claim 1 , wherein the first and third emissive materials comprise red emissive materials.
5 . The device of claim 1 , wherein the HOMO energy level of the first emissive material is at least 0.1 eV deeper than the HOMO energy level of the third emissive material.
6 . The device of claim 1 , wherein the HOMO energy level of the first emissive material is at least 0.1 eV shallower than the HOMO energy level of the third emissive material and/or LUMO energy level of the first emissive material is at least 0.1 eV deeper than the LUMO energy level of the third emissive material.
7 . The device of claim 1 , wherein the LUMO energy level of the first emissive material is at least 0.1 eV shallower than the LUMO energy level of the third emissive material.
8 . The device of claim 1 , wherein the first emissive layer comprises a first host material, the second emissive layer comprises a second host material, and the third emissive layer comprises a third host material.
9 . The device of claim 8 , wherein the first host material is the same material as the third host material.
10 . The device of claim 8 , wherein at least one of the first emissive layer and the third emissive layer comprises a co-host material that comprises the second emissive material.
11 . The device of claim 8 , wherein the first host material has a HOMO energy level that is at least 0.1 eV shallower than a HOMO energy level of the third host material or at least 0.1 eV deeper than the HOMO energy level of the third host material.
12 . The device of claim 8 , wherein the first host material has a LUMO energy level that is at least 0.1 eV shallower than a LUMO energy level of the third host material or at least 0.1 eV deeper than the LUMO energy level of the third host material.
13 . The device of claim 8 , wherein each of the first and third host materials comprises a hole transporting cohost material and an electron transporting cohost material.
14 . The device of claim 13 , wherein the concentration of the hole transporting cohost material in the first host material is at least 1.5 times the concentration of the hole transporting cohost material in the third host material.
15 . The device of claim 8 , wherein the second host material comprises a hole transporting cohost material and an electron transporting cohost material.
16 . The device of claim 1 , wherein the third emissive layer has a thickness at least twice a thickness of the first emissive layer.
17 . The device of claim 1 , wherein the second emissive layer has a thickness that is at least twice a thickness of the third emissive layer.
18 . The device of claim 1 , wherein the first and third emissive layers have the same thickness.
19 . The device of claim 1 , wherein the first and third emissive layers have different thicknesses.
20 . The device of claim 1 , wherein at least one emissive layer disposed between the first emissive layer and the third emissive layer has a thickness that is at least twice the thickness of the first emissive layer.