Photodetector
A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.
1. A sensor, comprising:
a first substrate including:
a first semiconductor layer including:
a first avalanche photodiode including a first cathode region and a first anode region; and
a first isolation region,
a first wiring layer including:
a first wiring;
a first via, wherein the first cathode region is electrically connected to the first wiring through the first via;
a second wiring; and
a second via, wherein the first anode region is electrically connected to the second wiring through the second via; and
a second substrate stacked on the first substrate, the second substrate including:
a second wiring layer including:
a third wiring directly bonded to the first wiring; and
a fourth wiring directly bonded to the second wiring; and
a second semiconductor layer, wherein the first anode region is disposed between the first cathode region and the first isolation region.
2. The sensor according to claim 1 , wherein the first and third wirings overlap the first avalanche photodiode.
3. The sensor according to claim 2 , wherein the second and fourth wirings at least partially overlap the first avalanche photodiode.
4. The sensor according to claim 1 , wherein the first isolation region includes a first metal film.
5. The sensor according to claim 4 , wherein the first isolation region includes a void region at least partially surrounded by the first metal film.
6. The sensor according to claim 1 , further comprising an on-chip lens disposed on the first semiconductor layer.
7. The sensor according to claim 6 , wherein the on-chip lens is disposed on a light incident surface of the first semiconductor layer.
8. The sensor according to claim 6 , wherein the on-chip lens is disposed on a first film attached to the first isolation region.
9. The sensor according to claim 4 , wherein the first isolation region includes a second film attached to the first metal film.
10. The sensor according to claim 9 , wherein the first film is attached to the second film.
11. The sensor according to claim 7 , wherein the first isolation region penetrates the light incident surface of the first semiconductor layer.
12. A sensor, comprising:
a first substrate including:
a first semiconductor layer including:
a first avalanche photodiode including a first contact region and a second contact region; and
a first isolation region;
a first wiring layer including:
a first wiring;
a first via, wherein the first contact region is electrically connected to the first wiring through the first via;
a second wiring; and
a second via, wherein the second contact region is electrically connected to the second wiring through the second via; and
a second substrate stacked on the first substrate, the second substrate including:
a second wiring layer including:
a third wiring directly bonded to the first wiring; and
a fourth wiring directly bonded to the second wiring; and
a second semiconductor layer, wherein the first contact region is disposed between the second contact region and the first isolation region.
13. The sensor according to claim 12 , wherein the first and third wirings overlap the first avalanche photodiode.
14. The sensor according to claim 13 , wherein the second and fourth wirings at least partially overlap the first avalanche photodiode.
15. The sensor according to claim 12 , wherein the first isolation region includes a first metal film.
16. The sensor according to claim 15 , wherein the first isolation region includes a void region at least partially surrounded by the first metal film.
17. The sensor according to claim 12 , further comprising an on-chip lens disposed on the first semiconductor layer.
18. The sensor according to claim 17 , wherein the on-chip lens is disposed on a light incident surface of the first semiconductor layer.
19. The sensor according to claim 17 , wherein the on-chip lens is disposed on a first film attached to the first isolation region.
20. A sensor, comprising:
an on-chip lens;
a first substrate including:
a first semiconductor layer including:
a first avalanche photodiode including a first contact region and a second contact region; and
a first wiring layer including:
a first wiring;
a first via, wherein the first contact region is electrically connected to the first wiring through the first via;
a second wiring; and
a second via; wherein the second contact region is electrically connected to the second wiring through the second via; and
a second substrate stacked on the first substrate, the second substrate including:
a second wiring layer including:
a third wiring directly bonded to the first wiring; and
a fourth wiring directly bonded to the second wiring; and
a second semiconductor layer, wherein the first contact region is disposed between the second contact region and the first isolation region, and wherein the on-chip lens is disposed on the first substrate.
21. The sensor according to claim 20 , wherein the first and third wirings overlap the first avalanche photodiode.
22. The sensor according to claim 21 , wherein the second and fourth wirings at least partially overlap the first avalanche photodiode.
23. The sensor according to claim 20 , wherein the first isolation region includes a first metal film.
24. The sensor according to claim 23 , wherein the first isolation region includes a void region at least partially surrounded by the first metal film.
25. The sensor according to claim 20 , wherein the on-chip lens is disposed on the first semiconductor layer.
26. The sensor according to claim 25 , wherein the on-chip lens is disposed on a light incident surface of the semiconductor layer.
27. The sensor according to claim 25 , wherein the on-chip lens is disposed on a first film attached to the first isolation region.
28. A time of flight system comprising:
a light source configured to emit light to an object;
a sensor, comprising:
a first substrate including:
a first semiconductor layer including:
a first avalanche photodiode including a first cathode region and a first anode region; and
a first isolation region;
a first wiring layer including:
a first wiring;
a first via, wherein the first cathode region is electrically connected to the first wiring through the first via;
a second wiring; and
a second via, wherein the first anode region is electrically connected to the second wiring through the second via, and
a second substrate stacked on the first substrate, the second substrate including:
a second wiring layer comprising:
a third wiring directly bonded to the first wiring; and
a fourth wiring directly bonded to the second wiring; and
a second semiconductor layer, wherein the first anode region is disposed between the first cathode region and the first isolation region.
29. The time of flight system according to claim 28 , wherein the first and third wirings overlap the first avalanche photodiode.
30. The time of flight system according to claim 29 , wherein the second and fourth wirings at least partially overlap the first avalanche photodiode.