Wafers with etchable sacrificial patterns, anchors, tethers, and printable devices
Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. The semiconductor active layer and the sacrificial layer may be selectively etched in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. The capping layer and the first portion of the semiconductor active layer may be selectively etched to thereby expose the sacrificial layer. The sacrificial layer may be selectively removed from between the first portion of the semiconductor active layer and the handling substrate to thereby define a suspended integrated circuit chip encapsulated by the capping layer.
1. A wafer of devices, comprising:
a substrate, the substrate comprising anchors separated by spaced-apart sacrificial patterns;
devices, each disposed entirely over one of the sacrificial patterns; and
tethers, wherein for each of the tethers, the tether extends between a device of the devices and an anchor of the anchors that is adjacent to the device to attach the device to the anchor,
wherein the tether is formed from an encapsulating capping layer that extends over the device.
2. The wafer of claim 1 , wherein the tether extends over the anchor.
3. The wafer of claim 1 , wherein the tether is disposed in a common layer with at least a portion of the device.
4. The wafer of claim 1 , wherein each of the spaced-apart sacrificial patterns comprises a material that is differentially etchable from the anchors.
5. The wafer of claim 1 , wherein each of the devices is a semiconductor device.
6. The wafer of claim 1 , wherein each of the devices comprises a multi-layer interconnect network.
7. The wafer of claim 1 , wherein each of the anchors has a thickness greater than a thickness of each of the sacrificial patterns.
8. The wafer of claim 1 , wherein each of the sacrificial patterns is exposed.
9. The wafer of claim 1 , wherein the substrate is a semiconductor substrate, a silicon substrate, or a glass substrate.
10. The wafer of claim 9 , wherein the substrate is a silicon substrate or a glass substrate.
11. The wafer of claim 1 , wherein the substrate is a glass substrate.
12. The wafer of claim 1 , wherein each of the devices is an active electronic device.
13. The wafer of claim 1 , wherein each of the devices is an integrated circuit.
14. The wafer of claim 1 , wherein each of the devices comprises a silicon-on-insulator substrate.
15. The wafer of claim 1 , wherein each of the sacrificial patterns is a patterned oxide layer.
16. The wafer of claim 1 , wherein the anchor and the device are laterally adjacent and the tether extends laterally between the anchor and the device to attach the device to the anchor.
17. A wafer of devices, comprising:
a substrate, the substrate comprising anchors separated by spaced-apart recesses; and
devices, each disposed entirely over one of the recesses and connected to one of the anchors that is adjacent to the device by a tether,
wherein the tether is formed from an encapsulating capping layer that extends over the device.
18. The wafer of claim 17 , wherein the tether extends laterally to the one of the anchors to suspend the device over the one of the recesses.