Method for manufacturing semiconductor device
A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.
1. A method of manufacturing a semiconductor device, comprising:
forming a first film including a first metal above a processing target member;
forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film, and the second film including carbon and boron as the element;
forming a third film including the first metal above the second film;
forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film; and
processing the processing target member by performing etching using the mask film as a mask,
the first film and the third film being lower in total concentration of carbon and boron than the second film.
2. The method according to claim 1 , further comprising:
forming a fourth film including two or more types of element out of the second metal, carbon, and boron above the processing target member,
the first film being formed above the fourth film, and
the stacked film including the fourth film.
3. The method according to claim 2 , wherein
a silicon oxide is exposed on an upper surface of the processing target member.
4. The method according to claim 1 , further comprising:
forming a fourth film including the first metal and nitrogen on the processing target member,
the first film being formed on the fourth film, and
the opening part being provided also to the fourth film in the forming of the mask film.
5. The method according to claim 1 , wherein
the forming of the second film and the forming of the third film are alternately performed.
6. The method according to claim 5 , wherein
the third film is formed thicker than the second film.
7. The method according to claim 1 , wherein
the second metal and the first metal are the same in type.
8. The method according to claim 1 , wherein
the first metal and the second metal are each selected from a group consisting of tungsten, molybdenum, tantalum, cobalt, and titanium.
9. The method according to claim 1 , wherein the first film and the third film further include carbon and boron.
10. The method according to claim 1 , wherein
insulating films and sacrifice films are alternately stacked above a substrate in the processing target member,
the processing of the processing target member includes forming a hole penetrating the insulating films and the sacrifice films and reaching the substrate, and
the method further comprising:
forming a charge storage film on an inner surface of the hole;
forming a tunnel insulating film on a side surface of the charge storage film;
forming a semiconductor pillar on a side surface of the tunnel insulating film;
forming an opening part penetrating the insulating films and the sacrifice films after the forming of the semiconductor pillar;
removing the sacrifice films by performing etching via the opening part; and
forming electrode films in spaces from which the sacrifice films have been removed.
11. A method of manufacturing a semiconductor device, comprising:
forming a stacked body by alternately forming first layers and second layers above a substrate;
forming a first film including carbon and boron above the stacked body;
forming a second film including carbon and boron above the first film, the second film being higher in total concentration of carbon and boron than the first film;
forming a mask film by providing an opening part to a stacked film including the first film 7 and the second film;
forming a hole penetrating the first layers and the second layers and reaching the substrate by performing etching using the mask film as a mask;
forming a charge storage film on an inner surface of the hole;
forming a tunnel insulating film on a side surface of the charge storage film; and
forming a semiconductor pillar on a side surface of the tunnel insulating film.
12. A method of manufacturing a semiconductor device, comprising:
forming a first film including carbon and boron above a processing target member;
forming a second film including carbon and boron above the first film, the second film is higher in total concentration of carbon and boron than the first film;
forming a third film including carbon and boron above the second film;
forming a mask film by providing an opening part to a stacked film including the first film, the second film, and the third film;
processing the processing target member by performing etching using the mask film as a mask.
13. The method according to claim 12 , further comprising:
forming a fourth film including two or more types of element out of the second metal, carbon, and boron above the processing target member,
the first film being formed above the fourth film, and
the stacked film including the fourth film.
14. The method according to claim 13 , wherein
a silicon oxide is exposed on an upper surface of the processing target member.
15. The method according to claim 12 , further comprising:
forming a fourth film including the first metal and nitrogen on the processing target member,
the first film being formed on the fourth film, and
the opening part being provided also to the fourth film in the forming of the mask film.
16. The method according to claim 12 , wherein
the forming of the second film and the forming of the third film are alternately performed.
17. The method according to claim 16 , wherein
the third film is formed thicker than the second film.
18. The method according to claim 12 , wherein
the second metal and the first metal are the same in type.
19. The method according to claim 12 , wherein
the first metal and the second metal are each selected from a group consisting of tungsten, molybdenum, tantalum, cobalt, and titanium.