Surface-mount integrated circuit package with coated surfaces for improved solder connection
Methods are disclosed for forming flat leads packages (e.g., QFP or SOT packages) having leads coated with a solder-enhancing material for improved solder mounting to a PCB or other structure. The method may include forming a flat leads package structure including an array of encapsulated IC structures formed on a common leadframe. An isolation cutting process may be performed to electrically isolate the IC structures from each other and define a plurality of leadframe leads extending from each IC structure. After the isolation cutting process, an immersion coating process is performed to coat exposed surfaces of the leadframe leads, including the full surface area of a distal end of each leadframe lead. The coating (e.g., tin coating) covering the distal ends of the leadframe leads may enhance the flow of solder material, e.g., when soldering to a PCB, to provide an improved solder connection.
1. A method for forming an integrated circuit (IC) package, the method comprising:
forming an IC package structure including a plurality of encapsulated IC structures formed on a common leadframe, the leadframe having exposed upper leadframe surfaces;
coating the exposed upper leadframe surfaces with a first solder-enhancing coating material;
performing an isolation cutting process to electrically isolate the plurality of encapsulated IC structures from each other by selectively cutting through the leadframe at locations between adjacent encapsulated IC structures, wherein the isolation cutting process forms an isolation cut groove defining a plurality of leadframe terminal pairs, each leadframe terminal pair including a pair of leadframe terminals on opposing sides of the isolation cut groove, each leadframe terminal having an exposed terminal sidewall surface at a distal end of the leadframe terminal and facing into the isolation cut groove;
after performing the isolation cutting process, performing an immersion coating process including immersing the IC package structure in a second solder-enhancing coating material to (a) coat a full surface area of the exposed terminal sidewall surface at the distal end of each leadframe terminal to define a fully coated distal terminal sidewall surface of each leadframe terminal and (b) further coat the upper leadframe surfaces previously coated with the first solder-enhancing coating material to thereby increase a thickness of solder-enhancing material on the upper leadframe surfaces;
after performing the immersion coating process, performing a singulation cutting process to singulate the plurality of encapsulated IC structures.
2. The method of claim 1 , wherein the second solder-enhancing coating material comprise tin.
3. The method of claim 1 , further comprising, after performing the immersion coating process, deforming the leadframe terminals leads toward a bottom surface of the respective encapsulated IC structure.
4. The method of claim 1 , wherein the singulation cutting process comprises cutting the leadframe at locations other than at the leadframe terminals defined by the isolation cutting process.
5. The method of claim 1 , wherein the singulation cutting process does not remove the second solder-enhancing coating material on the exposed end sidewall surface at the distal end of each leadframe terminal.
6. The method of claim 1 , further comprising, after the singulation cutting process to singulate the plurality of encapsulated IC structures, performing a soldering process on the fully coated distal end sidewall surface of a selected leadframe terminal to form a solder having a solder connection area covering at least 80% of a full height of the fully coated distal end sidewall surface.
7. The method of claim 1 , further comprising, after the singulation cutting process to singulate the plurality of encapsulated IC structures, performing a soldering process on the fully coated distal end sidewall surface of a selected leadframe terminal to form a solder having a solder connection area covering at least 90% of a full height of the fully coated distal end sidewall surface.
8. The method of claim 1 , further comprising, after the singulation cutting process to singulate the plurality of encapsulated IC structures, performing a soldering process on the fully coated distal end sidewall surface of a selected leadframe terminal to form a solder having a solder connection area covering 100% of a full height of the fully coated distal end sidewall surface.
9. The method of claim 1 , wherein the plurality of encapsulated IC structures comprises flat leads structures.
10. The method of claim 1 , wherein the plurality of encapsulated IC structures comprises quad flat packages (QFPs).
11. The method of claim 1 , wherein the plurality of encapsulated IC structures comprises small outline transistor (SOT) packages.
12. The method of claim 1 , wherein the immersion process coats the full surface area of the exposed terminal sidewall surface of each leadframe terminal, but does not fill the isolation cut groove, such that a coating-free gap remains in the isolation cut groove.
13. The method of claim 12 , wherein:
the coating-free gap in the isolation cut groove has a coating-free gap width; and
the singulation cutting process has a cutting width less than the coating-free gap width, such that the singulation cutting process does not remove the second solder-enhancing coating material on the exposed end sidewall surface of each leadframe terminal.
14. The method of claim 1 , wherein the first solder-enhancing coating material comprise tin.
15. The method of claim 1 , wherein coating the exposed upper leadframe surfaces with a first solder-enhancing coating material comprises a tin electroplating process.
16. A method for forming an integrated circuit (IC) package, the method comprising:
forming an IC package structure including a plurality of encapsulated IC structures formed on a common leadframe;
performing an isolation cutting process to electrically isolate the plurality of encapsulated IC structures from each other by selectively cutting through the leadframe at locations between adjacent encapsulated IC structures, wherein the isolation cutting process forms an isolation cut groove defining a plurality of leadframe terminal pairs, each leadframe terminal pair including a pair of leadframe terminals on opposing sides of the isolation cut groove, each leadframe terminal having an exposed terminal sidewall surface at a distal end of the leadframe terminal and facing into the isolation cut groove;
after performing the isolation cutting process, performing an immersion coating process including immersing the IC package structure in a solder-enhancing coating material, wherein the immersion coating process (a) coats a full surface area of the exposed terminal sidewall surface at the distal end of each leadframe terminal with the solder-enhancing coating material to define a fully coated distal terminal sidewall surface of each leadframe but (b) does not fill the isolation cut groove, such that a coating-free gap having a coating-free gap width remains in the isolation cut groove; and
after performing the immersion coating process, performing a singulation cutting process to singulate the plurality of encapsulated IC structures, wherein the singulation cutting process has a cutting width less than the coating-free gap width, such that the singulation cutting process does not remove the solder-enhancing coating material on the exposed end sidewall surface of each leadframe terminal.