Multi-metal fill with self-aligned patterning and dielectric with voids
Photolithography overlay errors are a source of patterning defects, which contribute to low wafer yield. An interconnect formation process that employs a patterning photolithography/etch process with self-aligned interconnects is disclosed herein. The interconnection formation process, among other things, improves a photolithography overlay (OVL) margin since alignment is accomplished on a wider pattern. In addition, the patterning photolithography/etch process supports multi-metal gap fill and low-k dielectric formation with voids.
1. A semiconductor device, comprising:
a dielectric stack over a substrate;
a first dielectric layer over the dielectric stack;
a first conductive structure embedded in the first dielectric layer, wherein a first portion of the first conductive structure penetrates through the dielectric stack;
a second conductive structure embedded in the first dielectric layer, wherein a second portion of the second conductive structure penetrates through the dielectric stack, and wherein the first dielectric layer comprises a void formed between the first and second conductive structures; and
a second dielectric layer in contact with the first dielectric layer and separated from the first and second conductive structures.
2. The semiconductor device of claim 1 , further comprising:
at least one transistor with one or more contact metal layers over the substrate; and
an interconnect layer over the one or more contact metal layers, wherein the dielectric stack is over the interconnect layer.
3. The semiconductor device of claim 1 , wherein at least one of the first portion of the first conductive structure and the second portion of the second conductive structure comprises a via.
4. The semiconductor device of claim 1 , wherein the first conductive structure comprises a first conductive material, wherein the second conductive structure comprises a second conductive material, and wherein the first conductive material is different from the second conductive material.
5. The semiconductor device of claim 4 , wherein the first conductive structure comprises a first metal oxide layer over the first conductive material and the second conductive structure comprises a second metal oxide layer over the second conductive material.
6. The semiconductor device of claim 1 , wherein the first and second conductive structures comprise one or more of copper, cobalt, aluminum, graphene, and combinations thereof.
7. A semiconductor device, comprising:
a dielectric stack disposed over a substrate;
a first dielectric layer disposed over the dielectric stack;
conductive structures embedded in the first dielectric layer, wherein:
a top surface of each of the conductive structures is substantially coplanar with one another;
the first dielectric layer comprises a void formed between adjacent conductive structures; and
at least one of the conductive structures penetrates through the dielectric stack; and
a second dielectric layer in contact with the first dielectric layer and separated from the conductive structures.
8. The semiconductor device of claim 7 , further comprising:
an interconnect layer comprising a plurality of metal lines, wherein the dielectric stack is disposed over the interconnect layer.
9. The semiconductor device of claim 8 , wherein at least one of the conductive structures is in contact with the interconnect layer.
10. The semiconductor device of claim 7 , wherein a first conductive structure of the conductive structures comprises a first conductive material, wherein a second conductive structure of the conductive structures comprises a second conductive material, and wherein the first conductive material is different from the second conductive material.
11. The semiconductor device of claim 10 , wherein the first conductive structure comprises a first metal oxide layer over the first conductive material and the second conductive structure comprises a second metal oxide layer over the second conductive material.
12. The semiconductor device of claim 7 , wherein the conductive structures comprise one or more of copper, cobalt, aluminum, graphene, and combinations thereof.
13. A semiconductor device, comprising:
a dielectric stack disposed over a substrate;
a first metal layer and a second metal layer disposed over the dielectric stack, wherein the first and second metal layers comprise different metallic materials from one another, and wherein the first and second metal layers penetrate through the dielectric stack;
a first metal oxide layer disposed over the first metal layer;
a second metal oxide layer disposed over the second metal layer;
a first dielectric layer in contact with side surfaces of the first and second metal layers and over the first and second metal oxide layers, wherein the first dielectric layer comprises a void; and
a second dielectric layer in contact with the first dielectric layer and separated from the first and second metal oxide layers.
14. The semiconductor device of claim 13 , wherein a top surface of the first metal layer is substantially coplanar with an other top surface of the second metal layer.
15. The semiconductor device of claim 13 , further comprising:
a transistor with one or more contact metal layers over the substrate; and
an interconnect layer over the one or more contact metal layers, wherein the dielectric stack is disposed over the interconnect layer.
16. The semiconductor device of claim 15 , further comprising a third metal layer formed through the dielectric stack and in contact with the interconnect layer, wherein the first and third metal layers comprise an identical metallic material.
17. The semiconductor device of claim 13 , wherein the metallic materials of the first and second metal layers comprise one or more of copper, cobalt, aluminum, graphene, and combinations thereof.
18. The semiconductor device of claim 13 , wherein the first and second metal oxide layers comprise different metallic elements from each other.
19. The semiconductor device of claim 13 , wherein the first and second metal oxide layers comprise an identical oxide material.
20. The semiconductor device of claim 13 , wherein the first and second metal oxide layers comprise one or more of aluminum-based oxides, tungsten-based oxides, nickel-based oxides, zirconium-based oxides, cobalt-based oxides, and combinations thereof.