Gate drive control method for SiC and IGBT power devices to control desaturation or short circuit faults
A gate-drive controller for a power semiconductor device includes a master control unit (MCU) and one or more comparators that compare the output signal of the power semiconductor device to a reference value generated by the MCU. The MCU, in response to a turn-off trigger signal, generates a first intermediate drive signal for the power semiconductor device and generates a second intermediate drive signal, different from the first drive signal, when a DSAT signal indicates that the power semiconductor device is experiencing de-saturation. The MCU generates a final drive signal for the power semiconductor when the output signal of the one or more comparators indicates that the output signal of the power semiconductor device has changed relative to the reference value. The controller may also include a timer that causes the drive signals to change in predetermined intervals when the one or more comparators do not indicate a change.
1. A method of controlling a power semiconductor device by a master control unit (MCU), the method comprising:
determining, by the MCU, a voltage across the power semiconductor device or a current through the power semiconductor device;
in response to the voltage across the power semiconductor device or the current through the power semiconductor device being less than or equal to a predetermined level:
selecting, by the MCU, a first set of multi-level turn ON/OFF (MLTO) signals that include a first set of voltage levels, and
driving, by the MCU, the power semiconductor device with the first set of MLTO signals:
in a stepwise decreasing manner over a first period of time to turn OFF the power semiconductor device, or
in a stepwise increasing manner over the first period of time to turn ON the power semiconductor device; and
in response to the voltage across the power semiconductor device or the current through the power semiconductor device being greater than the predetermined level:
selecting, by the MCU, a second set of MLTO signals that include a second set of voltage levels, and
driving, by the MCU, the power semiconductor device with the second set of MLTO signals:
in a stepwise decreasing manner over a second period of time to turn OFF the power semiconductor device, or
in a stepwise increasing manner over the second period of time to turn ON the power semiconductor device,
wherein the first set of MLTO signals are different than the second set of MLTO signals.
2. The method of claim 1 further comprising:
determining, by the MCU, that the power semiconductor device is in a normal operation in response to the voltage across the power semiconductor device or the current through the power semiconductor device being less than or equal to the predetermined level;
selecting, by the MCU, the first set of MLTO signals to correspond to the normal operation;
determining, by the MCU, that the power semiconductor device is in a desaturation (DSAT) operation in response to the voltage across the power semiconductor device or the current through the power semiconductor device being greater than the predetermined level; and
selecting, by the MCU, the second set of MLTO signals to correspond to the DSAT operation.
3. The method of claim 1 , further comprising:
determining, by the MCU, a rate of change in the voltage across the power semiconductor device;
comparing, by the MCU, the rate of change in voltage to a rate of change threshold; and
selecting, by the MCU, one of the first set of MLTO signals or the second set of MLTO signals for driving the power semiconductor device based on the comparison.
4. The method of claim 1 , further comprising:
comparing, by a comparator, the voltage across the power semiconductor device or the current through the power semiconductor device to the predetermined level; and
outputting, by the comparator, i) a first Boolean signal to the MCU indicating that the voltage across the power semiconductor device or the current through the power semiconductor device is less than or equal to the predetermined level, or ii) a second Boolean signal to the MCU indicating that the voltage across the power semiconductor device or the current through the power semiconductor device is greater than the predetermined level.
5. The method of claim 1 , further comprising:
determining, by the MCU, timing for i) the stepwise increasing or decreasing between the first set of voltage levels, or ii) the stepwise increasing or decreasing between the second set of voltage levels, in response to a voltage comparison between the voltage across the power semiconductor device and a voltage spike threshold.
6. The method of claim 1 , wherein a timing for i) the stepwise increasing or decreasing between the first set of voltage levels, or ii) the stepwise increasing or decreasing between switching between the second set of voltage levels is predetermined.
7. The method of claim 1 , further comprising:
measuring, by the MCU, a shunt voltage across a shunt resistor or a current mirror coupled to the power semiconductor device to determine the voltage across the power semiconductor device or the current through the power semiconductor device.
8. The method of claim 1 , further comprising:
determining, by the MCU, timing for i) the stepwise increasing or decreasing between the first set of voltage levels, or ii) the stepwise increasing or decreasing between the second set of voltage levels in response to a timer of the MCU.
9. The method of claim 1 , further comprising:
determining, by a timer of the MCU, a cumulative operational time of the power semiconductor device; and
adjusting the first set of MLTO signals and the second set of MLTO signals based on the cumulative operational time.
10. The method of claim 1 , further comprising:
determining, by the MCU, both the voltage across the power semiconductor device and the current through the power semiconductor device; and
selecting, by the MCU, one of the first set of MLTO signals or the second set of MLTO signals based on both the voltage across the power semiconductor device and the current through the power semiconductor device.
11. A method of controlling a field effect transistor (FET) by a master control unit (MCU), the method comprising:
determining, by the MCU, a drain-source voltage across the FET or a drain current through the FET;
in response to the drain-source voltage across the FET or the drain current through the FET being less than or equal to a predetermined level:
selecting, by the MCU, a first set of multi-level turn ON/OFF (MLTO) signals that include a first set of voltage levels, and
driving, by the MCU, a gate of the FET with the first set of MLTO signals:
in a stepwise decreasing manner over a first period of time to turn OFF the FET, or
in a stepwise increasing manner over the first period of time to turn ON the FET; and
in response to the drain-source voltage across the FET or the drain current through the FET being greater than the predetermined level:
selecting, by the MCU, a second set of MLTO signals that include a second set of voltage levels, and
driving, by the MCU, the gate of the FET with the second set of MLTO signals:
in a stepwise decreasing manner over a second period of time to turn OFF the FET, or
in a stepwise increasing manner over the second period of time to turn ON the FET,
wherein the first set of MLTO signals are different than the second set of MLTO signals.
12. The method of claim 11 , further comprising:
determining, by the MCU, that a power FET is in a normal operation in response to the drain-source voltage across the FET or the drain current through the FET being less than or equal to the predetermined level;
selecting, by the MCU, the first set of MLTO signals to correspond to the normal operation;
determining, by the MCU, that the FET is in a desaturation (DSAT) operation in response to the drain-source voltage across the FET or the drain current through the FET being greater than the predetermined level; and
selecting, by the MCU, the second set of MLTO signals to correspond to the DSAT operation.
13. The method of claim 11 , further comprising:
determining, by the MCU, timing for i) the stepwise increasing or decreasing between the first set of voltage levels, or ii) the stepwise increasing or decreasing between the second set of voltage levels, in response to a comparison between the drain-source voltage across the FET and a voltage spike threshold.
14. The method of claim 11 , wherein a timing for i) the stepwise increasing or decreasing between the first set of voltage levels, or ii) the stepwise increasing or decreasing between the second set of voltage levels is predetermined.
15. The method of claim 11 , further comprising:
determining, by the MCU, timing for i) the stepwise increasing or decreasing between the first set of voltage levels, or ii) the stepwise increasing or decreasing between the second set of voltage levels in response to a timer of the MCU.
16. A method of controlling an insulated-gate bipolar transistor (IGBT) by a master control unit (MCU), the method comprising:
determining, by the MCU, a collector-emitter voltage across the IGBT or a collector current through the IGBT;
in response to the collector-emitter voltage across the IGBT or the collector current through the IGBT being less than or equal to a predetermined level:
selecting, by the MCU, a first set of multi-level turn ON/OFF (MLTO) signals that include a first set of voltage levels, and
driving, by the MCU, a gate of the IGBT with the first set of MLTO signals:
in a stepwise decreasing manner over a first period of time to turn OFF the IGBT, or
in a stepwise increasing manner over the first period of time to turn ON the IGBT; and
in response to the collector-emitter voltage across the IGBT or the collector current through the IGBT being greater than the predetermined level:
selecting, by the MCU, a second set of MLTO signals that include a second set of voltage levels, and
driving, by the MCU, the gate of the IGBT with the second set of MLTO signals:
in a stepwise decreasing manner over a second period of time to turn OFF the IGBT, or
in a stepwise increasing manner over the second period of time to turn ON the IGBT,
wherein the first set of MLTO signals are different than the second set of MLTO signals.
17. The method of claim 16 , further comprising:
determining, by the MCU, that a power IGBT is in a normal operation in response to the collector-emitter voltage across the IGBT or the collector current through the IGBT being less than or equal to the predetermined level;
selecting, by the MCU, the first set of MLTO signals to correspond to the normal operation;
determining, by the MCU, that the IGBT is in a desaturation (DSAT) operation in response to the collector-emitter voltage across the IGBT or the collector current through the IGBT being greater than the predetermined level; and
selecting, by the MCU, the second set of MLTO signals to correspond to the DSAT operation.
18. The method of claim 16 , further comprising:
determining, by the MCU, timing for i) the stepwise increasing or decreasing between the first set of voltage levels, or ii) the stepwise increasing or decreasing between the second set of voltage levels, in response to a comparison between the collector-emitter voltage across the IGBT and a voltage spike threshold.
19. The method of claim 16 , wherein a timing for i) the stepwise increasing or decreasing between the first set of voltage levels, or ii) the stepwise increasing or decreasing between the second set of voltage levels is predetermined.
20. The method of claim 16 , further comprising:
determining, by the MCU, timing for i) the stepwise increasing or decreasing between the first set of voltage levels, or ii) the stepwise increasing or decreasing between the second set of voltage levels in response to a timer of the MCU.