Electrical connection placement of semiconductor device package and method of manufacturing the same

1. A semiconductor device package, comprising:

a redistribution structure having an electrical terminal adjacent to a surface of the redistribution structure and a seed layer covering a side surface of the electrical terminal;

an electrical connection disposed on a first surface of the electrical terminal, wherein the electrical terminal comprises a pad portion connected to the electrical connection and a trace portion connected to the pad portion; and

an interface between the trace portion and the pad portion;

wherein the seed layer extends to the first surface of the electrical terminal and wherein the interface is concave toward the electrical connection.

2. The semiconductor device package of claim 1 , wherein the electrical terminal comprises a second surface adjacent to and angled with respect to the side surface.

3. The semiconductor device package of claim 2 , wherein the seed layer is disposed on the second surface of the electrical terminal.

4. The semiconductor device package of claim 2 , wherein the redistribution structure comprises a first dielectric layer having a first surface and a second surface opposite to the first surface and a second dielectric layer stacked on the second surface of the first dielectric layer, and wherein the first surface of the electrical terminal is adjacent to the first surface of the first dielectric layer and the second surface of the electrical terminal is arranged on the second surface of the first dielectric layer.

5. The semiconductor device package of claim 1 , wherein the redistribution structure comprises a first dielectric layer having a first surface and a second surface opposite to the first surface and a second dielectric layer stacked on the second surface of the first dielectric layer, and wherein the interface is located between the first surface and the second surface of the first dielectric layer.

6. The semiconductor device package of claim 1 , wherein the first surface of the electrical terminal is recessed with respect to the surface of the redistribution structure.

7. The semiconductor device package of claim 4 , wherein the seed layer extends from the second surface of the first dielectric layer to the first surface of the first dielectric layer.

8. The semiconductor device package of claim 1 , wherein a side surface of the pad portion and a side surface of the trace portion are covered by the seed layer.

9. The semiconductor device package of claim 8 , wherein a surface of the trace portion, which is adjacent to and angled with respect to the side surface, is covered by the seed layer.

10. A semiconductor device package, comprising:

a redistribution structure;

an electrical terminal arranged in the redistribution structure and adjacent to a surface of the redistribution structure, wherein the electrical terminal comprises a pad portion exposed from the surface of the redistribution structure and a trace portion connected to the pad portion;

a seed layer between the redistribution structure and the electrical terminal and extending to the surface of the redistribution structure; and

an interface between the trace portion and the pad portion, wherein the interface is concave toward a surface of the pad which is exposed from the surface of the redistribution structure.

11. The semiconductor device package of claim 10 , wherein the seed layer is configured to cover a side surface of the electrical terminal.

12. The semiconductor device package of claim 10 , wherein the electrical terminal comprises a first surface exposed from the surface of the redistribution structure.

13. The semiconductor device package of claim 12 , wherein the redistribution structure comprises a first dielectric layer having a first surface and a second surface opposite to the first surface and a second dielectric layer stacked on the second surface of the first dielectric layer, and wherein the first surface of the electrical terminal is adjacent to the first surface of the first dielectric layer and a second surface of the electrical terminal is arranged on the second surface of the first dielectric layer.

14. The semiconductor device package of claim 13 , wherein the seed layer extends from the second surface of the electrical terminal to the first surface of the electrical terminal and covers a side surface of the electrical terminal.

15. The semiconductor device package of claim 12 , further comprising an electrical connection disposed on the first surface of the electrical terminal.

16. The semiconductor device package of claim 10 , wherein the redistribution structure comprises a first dielectric layer having a first surface and a second surface opposite to the first surface and a second dielectric layer stacked on the second surface of the first dielectric layer, and wherein the interface is located between the first surface and the second surface of the first dielectric layer.