Manufacturing method for liquid crystal display device
A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
1. A display device comprising:
a source electrode of a thin film transistor;
a pixel electrode connected to the source electrode;
a first inorganic insulation film provided on the source electrode;
a second inorganic insulating film provided between the pixel electrode and the first inorganic insulation film; and
a counter electrode between the first inorganic insulating film and the second inorganic insulating film; and
a metal electrically connected to the counter electrode,
wherein the second inorganic insulation film is stacked on the first inorganic insulation film above the source electrode,
the first inorganic insulation film and the second inorganic insulation film have a through hole,
the through hole exposes the source electrode,
the pixel electrode is connected to the source electrode via the through hole, and
the metal is provided between the first inorganic insulation film and the second inorganic insulation film.
2. The display device of claim 1 , wherein
the first inorganic insulation film and the second inorganic insulation film have a wall surface defining the through hole, and
the pixel electrode is in contact with the wall surface.
3. The display device of claim 1 , further comprising an organic insulation film provided between the source electrode and the pixel electrode,
wherein the organic insulation film contacts with at least one of the first inorganic insulation film and the second inorganic insulation film.
4. The display device of claim 3 , wherein the organic insulation film does not contact with the pixel electrode.
5. The display device of claim 4 , wherein the organic insulation film does not contact with the source electrode.
6. The display device of claim 3 , wherein the counter electrode is provided between the pixel electrode and the organic insulation film, and
wherein the counter electrode does not contact with the pixel electrode and the source electrode.
7. The display device of claim 2 , wherein the first inorganic insulation film and the second inorganic insulation film are silicon nitride film, and
a second inorganic insulation film is not as dense as the first inorganic insulation film.
8. The display device of claim 2 , wherein a thickness of the first inorganic insulation film is different from a thickness of the second inorganic insulation film.
9. A display device comprising:
a source electrode of a thin film transistor;
a first transparent conductive film, which is not connected to the source electrode;
a first inorganic insulation film provided between the source electrode and the first transparent electrode;
a second inorganic insulating film provided between the first inorganic insulation film and the transparent conductive film; and
a metal provided between the source electrode and the second inorganic insulation film,
wherein the second inorganic insulation film is stacked on the first inorganic insulation film above the source electrode,
the first inorganic insulation film and the second inorganic insulation film have a through hole,
the through hole exposes the source electrode, and
the metal is electrically connected to the first transparent electrode.
10. The display device of claim 9 , wherein
the first inorganic insulation film and the second inorganic insulation film have a wall surface defining the through hole, and
the through hole is a hole penetrated on the first inorganic insulation film and the second inorganic insulation film.
11. The display device of claim 10 , further comprising an organic insulation film provided between the source electrode and the first transparent conductive film,
wherein the organic insulation film contacts with at least one of the first inorganic insulation film and the second inorganic insulation film.
12. The display device of claim 11 , wherein the organic insulation film does not contact with the first transparent conductive film.
13. The display device of claim 11 , wherein the organic insulation film does not contact with the source electrode.
14. The display device of claim 10 , further comprises a second transparent conductive film opposed to the first transparent conductive film,
wherein the second inorganic insulating film is provided between the first transparent conductive film and the second inorganic insulation film, and
wherein a common potential is applied to the first transparent conductive film.
15. The display device of claim 14 , wherein the second transparent conductive film is connected to the source electrode via the through hole, and
the second transparent conductive film is in contact with the wall surface.
16. The display device of claim 15 , wherein the first inorganic insulation film and the second inorganic insulation film are silicon nitride film, and
a second inorganic insulation film is not as dense as the first inorganic insulation film.
17. The display device of claim 15 , wherein a thickness of the first inorganic insulation film is different from a thickness of the second inorganic insulation film.