IP Library Granted Patent US 11,093,326
Granted Patent B2
US 11,093,326 · App. 16/751,126 · Granted Aug 17, 2021

Dynamic multi-stage decoding

Inventors: Jun Tao (Ladera Ranch, CA); Niang-Chu Chen (Irvine, CA); Mark Joseph Dancho (Chandler, AZ); Xiaoheng Chen (Dublin, CA)
Assignee: Western Digital Technologies, Inc.
G06F11/1068G11C29/021G11C29/028G11C29/52H03M13/1108H03M13/1111H03M13/3715H03M13/6325
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Quick Facts
Patent No.
US 11,093,326
App. No.
16/751,126
Granted
Aug 17, 2021
Kind
B2
Abstract

Methods and systems for decoding raw data may select a preliminary read-level voltage from a sequence of read-level voltages based on a decoding success indicator and execute a preliminary hard decoding operation to decode raw data read from a plurality of memory cells using the preliminary read-level voltage. If the preliminary hard decoding operation is successful, the decoded data from the hard decoding operation is returned. If the preliminary hard decoding operation is unsuccessful, a multi-stage decoding operation may be executed to decode raw data read from the plurality of memory cells using the sequence of read-level voltages, and returning decoded data from the multi-stage decoding operation upon completion of the multi-stage decoding operation. The decoding success indicator is maintained based on results of the preliminary hard decoding operation or the multi-stage decoding operation.

Claims (42)

1. A data storage system, comprising:

a memory; and

a controller configured to cause:

decoding data of memory cells of the memory, using an initial read-level voltage, obtained from a sequence of read-level voltages based on a decoding success indicator;

when the decoding data is unsuccessful, performing a multi-stage decoding operation on the memory cells, wherein each stage of the multi-stage decoding operation comprises one hard decoding operation followed by up to a plurality of soft decoding operations, wherein each stage of the multi-stage decoding operation is associated with one respective read-level voltage from the sequence of read-level voltages, and wherein with respect to each stage, the one hard decoding operation and the up to a plurality of soft decoding operations are associated with the one respective read-level voltage; and

maintaining the decoding success indicator based on the decoding data or the multi-stage decoding operation.

2. The data storage system of claim 1 , wherein with respect to one stage of the multi-stage decoding operation, when the up to a plurality of soft decoding operations of the one stage are performed, the controller is configured to cause performing the up to a plurality of soft decoding operations of the one stage without re-reading the memory cells.

3. The data storage system of claim 2 , wherein when the one hard decoding operation of the one stage is performed, the controller is configured to cause performing the one hard decoding operation of the one stage without re-reading the memory cells.

4. The data storage system of claim 1 , wherein when a respective read-level voltage of a given stage of the multi-stage decoding operation is same as the initial read-level voltage, the controller is configured to skip the one hard decoding operation of the given stage.

5. The data storage system of claim 1 , wherein when the decoding data is unsuccessful,

a next decoding operation to follow the decoding data is a hard decoding operation, of the multi-stage decoding operation, associated with the initial read-level voltage,

when the hard decoding operation is unsuccessful, a next decoding operation to follow the hard decoding operating is at least one soft decoding operation, of the multi-stage decoding operation, associated with the initial read-level voltage, and

the memory cells are not read between the hard decoding operation and the at least one soft decoding operation.

6. The data storage system of claim 1 , wherein the controller is configured to cause:

selecting, based on the decoding success indicator, the initial read-level voltage from the sequence of read-level voltages;

returning data decoded from the decoding data when the decoding data is successful; and

returning data decoded from the multi-stage decoding operation upon successful completion of the multi-stage decoding operation.

7. The data storage system of claim 1 , wherein the controller is configured to cause: executing one or more stages of the multi-stage decoding operation sequentially until a hard decoding operating or a soft decoding operation in a given stage of the multi-stage decoding operation successfully decodes data read from the memory cells.

8. The data storage system of claim 1 , wherein the controller is configured to cause incrementing a counter value corresponding to a read-level voltage from the sequence of read-level voltages used to read data that is successfully decoded,

wherein the controller configured to cause maintaining the decoding success indicator comprises the controller configured to cause setting the decoding success indicator to indicate the read-level voltage from the sequence of read-level voltages with a highest corresponding counter value.

9. The data storage system of claim 1 , wherein the controller is configured to cause maintaining the decoding success indicator following completion of a number of read requests greater than one since the decoding success indicator has last been maintained.

10. The data storage system of claim 1 , wherein the memory cells are part of a block of a plurality of blocks on the memory, and wherein the controller is configured to cause maintaining a respective decoding success indicator for the block, a group of blocks comprising the block, or the memory.

11. A machine-implemented method, comprising:

decoding data of memory cells of a memory, using an initial read-level voltage, obtained from a sequence of read-level voltages based on a decoding success indicator;

when the decoding data is unsuccessful, performing a multi-stage decoding operation on the memory cells, wherein each stage of the multi-stage decoding operation comprises one hard decoding operation followed by up to a plurality of soft decoding operations, wherein each stage of the multi-stage decoding operation is associated with one respective read-level voltage from the sequence of read-level voltages, and wherein with respect to each stage, the one hard decoding operation and the up to a plurality of soft decoding operations are associated with the one respective read-level voltage; and

maintaining the decoding success indicator based on the decoding data or the multi-stage decoding operation.

12. The machine-implemented method of claim 11 , wherein with respect to one stage of the multi-stage decoding operation, when the up to a plurality of soft decoding operations of the one stage are performed, performing the up to a plurality of soft decoding operations of the one stage without re-reading the memory cells.

13. The machine-implemented method of claim 12 , wherein when the one hard decoding operation of the one stage is performed, performing the one hard decoding operation of the one stage without re-reading the memory cells.

14. The machine-implemented method of claim 11 , wherein when a respective read-level voltage of a given stage of the multi-stage decoding operation is same as the initial read-level voltage, skipping the one hard decoding operation of the given stage.

15. The machine-implemented method of claim 11 , wherein when the decoding data is unsuccessful,

a next decoding operation to follow the decoding data is a hard decoding operation, of the multi-stage decoding operation, associated with the initial read-level voltage,

when the hard decoding operation is unsuccessful, a next decoding operation to follow the hard decoding operating is at least one soft decoding operation associated with the initial read-level voltage, and

the memory cells are not read between the hard decoding operation and the at least one soft decoding operation.

16. The machine-implemented method of claim 11 , wherein one or more stages of the multi-stage decoding operation are executed sequentially until a hard decoding operating or a soft decoding operation in a given stage of the multi-stage decoding operation successfully decodes data read from the memory cells.

17. A data storage system, comprising:

a memory; and

means for decoding data of memory cells of the memory, using an initial read-level voltage, obtained from a sequence of read-level voltages based on a decoding success indicator;

when the decoding data is unsuccessful, means for performing a multi-stage decoding operation on the memory cells, wherein each stage of the multi-stage decoding operation comprises one hard decoding operation followed by up to a plurality of soft decoding operations, wherein each stage of the multi-stage decoding operation is associated with one respective read-level voltage from the sequence of read-level voltages, and wherein with respect to each stage, the one hard decoding operation and the up to a plurality of soft decoding operations are associated with the one respective read-level voltage; and

means for maintaining the decoding success indicator based on the decoding data or the multi-stage decoding operation.

18. The data storage system of claim 17 , wherein with respect to one stage of the multi-stage decoding operation, when the up to a plurality of soft decoding operations of the one stage are performed, the data storage system comprises means for performing the up to a plurality of soft decoding operations of the one stage without re-reading the memory cells.

19. The data storage system of claim 18 , wherein when the one hard decoding operation of the one stage is performed, the data storage system comprises means for performing the one hard decoding operation of the one stage without re-reading the memory cells.

20. The data storage system of claim 17 , wherein when a respective read-level voltage of a given stage of the multi-stage decoding operation is same as the initial read-level voltage, the data storage system comprises means for skipping the one hard decoding operation of the given stage.

Assignments (10)
PARTIAL RELEASE OF SECURITY INTERESTS Recorded Apr 25, 2025
From: JPMORGAN CHASE BANK, N.A., AS AGENT
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 071382/0001 →
SECURITY AGREEMENT Recorded Apr 25, 2025
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 071050/0001 →
PATENT COLLATERAL AGREEMENT Recorded Aug 23, 2024
From: SANDISK TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS THE AGENT
Reel/Frame 068762/0494 →
CHANGE OF NAME Recorded Jun 27, 2024
From: SANDISK TECHNOLOGIES, INC.
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 067982/0032 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 29, 2024
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: SANDISK TECHNOLOGIES, INC.
Reel/Frame 067567/0682 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
RELEASE OF SECURITY INTEREST AT REEL 052025 FRAME 0088 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 058965/0699 →
SECURITY INTEREST Recorded Feb 26, 2020
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS AGENT
Reel/Frame 052025/0088 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2020
From: CHEN, NIANG-CHU; CHEN, XIAOHENG; DANCHO, MARK JOSEPH; TAO, JUN
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 051882/0769 →