Temperature variation compensation
A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is operable to measure a first threshold voltage (VT) of a memory cell under a first parameter at a read temperature and measure a second VT of the memory cell under a second parameter at the read temperature in which the first parameter is different from the second parameter. A VT correction term for the memory cell is determined based upon the first VT measurement and the second VT measurement. A read VT of the memory cell is adjusted by using the VT correction term.
1. A non-transitory computer readable storage medium containing instructions that, when executed by a controller, perform a method of accessing data from a data storage device, the method comprising:
measuring a first threshold voltage and a second threshold voltage of a memory cell at different read parameters;
determining a temperature coefficient proxy for the memory cell;
retrieving an estimated temperature coefficient value correlated to the temperature coefficient proxy of the memory cell; and
adjusting a read threshold voltage of the memory cell by using the estimated temperature coefficient value.
2. The non-transitory computer readable storage medium of claim 1 , wherein a first parameter of measuring the first threshold voltage is a default read parameter.
3. The non-transitory computer readable storage medium of claim 1 , wherein:
a first parameter and a second parameter are different than a default read parameter; and
the method further comprises measuring a third threshold voltage of the memory cell under the default read parameter.
4. The non-transitory computer readable storage medium of claim 1 , wherein the read threshold voltage of the memory cell is measured under a default read parameter at a read temperature.
5. The non-transitory computer readable storage medium of claim 1 , wherein estimated temperature coefficient value is based upon an estimation of actual temperature coefficient measurements and single proxy measurements.
6. The non-transitory computer readable storage medium of claim 5 , wherein the estimation is a conditional expectation estimation.
7. The non-transitory computer readable storage medium of claim 1 , wherein estimated temperature coefficient value is based upon an estimation of actual temperature coefficient measurements and multiple proxy measurements.
8. The non-transitory computer readable storage medium of claim 7 , wherein the estimation is a linear estimation.
9. A method of mitigating cell voltage distribution widening due to cross temperature conditions in a data storage device, the method comprising:
characterizing an estimated temperature coefficient (TCO) value for each memory cell of one or more memory arrays, wherein the characterization generates an offline data structure, and wherein the data structure correlates a single proxy to a single TCO value;
measuring a threshold voltage at a read temperature with one or more read parameters to determine one or more proxy vectors;
applying the proxy vector to determine a corrected threshold voltage; and
applying the corrected threshold voltage to a read/write operation.
10. The method of claim 9 , wherein the data structure correlates multiple proxies to a single TCO value.
11. The method of claim 9 , wherein one memory array is characterized offline and the characterization is applied to other related memory arrays, wherein other related memory arrays include at least one of a memory array of a same design, of a same specifications, from a same manufacturing lot, and from a same wafer.
12. The method of claim 9 , wherein memory access parameters are comprised of at least one of a read temperature of a block of data, read temperature of a word line, read threshold voltages, write temperature of a block of data, and write temperature of a word line.
13. A non-transitory computer readable storage medium containing instructions that, when executed by a controller, perform a method of accessing data from a data storage device, the method comprising:
step for measuring a first plurality of threshold voltages of a page of memory cells under a first parameter at a read temperature, the first parameter comprising a first bit line voltage and a first sense amplifier integration time;
step for measuring a second plurality of threshold voltages of the page of memory cells under a second parameter at the read temperature, the second parameter comprising a second bit line voltage and a second sense amplifier integration time;
step for determining a temperature coefficient proxy for the page of memory cells;
step for characterizing an estimated temperature coefficient (TCO) value for each memory cell of the page of memory cells, wherein the characterization generates an offline data structure, and wherein the data structure correlates to a single proxy to a single TCO value;
step for retrieving a threshold voltage correction term for each memory cell of the page of memory cells based on the first plurality of measured threshold voltages under the first parameter and on the second plurality of measured threshold voltages under the second parameter; and
step for adjusting a read threshold voltage for each memory cell of the page of memory cells by using the threshold voltage correction term.
14. The non-transitory computer readable storage medium of claim 13 , wherein the first parameter of measuring the first plurality of threshold voltages is a default read parameter.
15. The non-transitory computer readable storage medium of claim 13 , wherein:
the first parameter and the second parameter are different than a default read parameter; and
the method further comprises measuring a third threshold voltage of the memory cell under the default read parameter.
16. The non-transitory computer readable storage medium of claim 13 , wherein the read threshold voltage of the memory cell is measured under a default read parameter at the read temperature.
17. The non-transitory computer readable storage medium of claim 13 , wherein the first bit line voltage and the second bit line voltage are different.
18. The non-transitory computer readable storage medium of claim 13 , wherein the first sense amplifier integration time and the second sense amplifier integration time are different.
19. The non-transitory computer readable storage medium of claim 13 , wherein:
the first bit line voltage and the second bit line voltage are different; and
the first sense amplifier integration time and the second sense amplifier integration time are different.
20. The non-transitory computer readable storage medium of claim 13 , wherein the threshold voltage correction term is retrieved from a data structure.