Method for forming mask pattern, storage medium, and apparatus for processing substrate
A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104 . Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104 . Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110 . Therefore, when the SiO 2 film 102 is subsequently etched using the pattern of the resist film 104 , the etching is not hindered, so that defects such as bridges can be suppressed.
1. A method of forming a mask pattern on a surface of a substrate using a metal-containing resist, the method comprising:
forming a sacrificial film on the surface of the substrate;
applying the metal-containing resist to a surface of the sacrificial film to form a resist film;
exposing the substrate;
supplying a developing solution to the substrate to form a resist pattern; and
removing at least a surface layer portion of the sacrificial film facing a bottom of the resist pattern to remove remaining metal components,
wherein the sacrificial film is insoluble in the developing solution,
wherein the sacrificial film has a property of being decomposed by irradiation with ultraviolet rays, and
wherein in the removing step, the at least a surface layer portion of the sacrificial film is removed by irradiating the substrate with ultraviolet rays.
2. The method of claim 1 , wherein in the removing step, a chemical liquid having no dissolving action on the resist film and having dissolving action on the sacrificial film is supplied to the substrate.
3. The method of claim 2 , wherein an exposed region of the resist film is insoluble in the developing solution, and
the sacrificial film is an anti-reflection film whose exposed region is insoluble in the chemical liquid.
4. The method of claim 2 , wherein an exposed region of the resist film is soluble in the developing solution, and
the sacrificial film is an anti-reflection film whose exposed region is insoluble in the chemical liquid.
5. The method of claim 1 , wherein the sacrificial film is an organic film containing carbon.
6. A method of forming a mask pattern on a surface of a substrate using a metal-containing resist, the method comprising:
applying the metal-containing resist to the surface of the substrate to form a resist film;
exposing the substrate;
supplying a developing solution to the substrate to form a resist pattern;
cross-linking the resist film by irradiating the surface of the substrate with ultraviolet rays; and
removing at least a surface layer of a sacrificial film facing a bottom of the resist pattern by heating the substrate, to remove remaining metal components,
wherein the sacrificial film is insoluble in the developing solution.
7. A storage medium storing a computer program for use in a substrate processing apparatus for forming a mask pattern using a metal-containing resist on a surface of a substrate,
wherein the computer program is configured to have a group of steps to execute the method of claim 1 .
8. A substrate processing apparatus, comprising:
a sacrificial film coating module configured to form a coating film as a sacrificial film on a substrate;
a resist coating module configured to apply a metal-containing resist to the substrate on which the sacrificial film is formed, to form a resist film;
a development module in which the resist film formed and exposed is developed with a developing solution to form a resist pattern; and
a sacrificial film removal module configured to remove at least a surface layer portion of the sacrificial film facing a bottom of the resist pattern to remove remaining metal components,
wherein the sacrificial film has a property of being decomposed by irradiation with ultraviolet rays, and
wherein the sacrificial film removal module is configured to remove the at least a surface layer portion of the sacrificial film by irradiating the substrate with ultraviolet rays.
9. The apparatus of claim 8 , wherein the sacrificial film removal module is configured to supply a chemical liquid having no dissolving action on the resist film and having dissolving action on the sacrificial film to the substrate.
10. A substrate processing apparatus, comprising:
a resist coating module configured to apply a metal-containing resist to a substrate to form a resist film;
a development module in which the resist film formed and exposed is developed with a developing solution to form a resist pattern;
an ultraviolet irradiation module configured to irradiate a surface of the substrate after development with ultraviolet rays to cross-link the resist film; and
a heating module configured to heat the substrate after irradiation with the ultraviolet rays to remove at least a surface layer of a sacrificial film facing a bottom of the resist pattern to remove remaining metal components,
wherein the sacrificial film is insoluble in the developing solution.