Substrate processing module
A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104 . Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection film 103 facing a bottom of the recess pattern 110 of the resist film 104 . Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110 . Therefore, when the SiO 2 film 102 is subsequently etched using the pattern of the resist film 104 , the etching is not hindered, so that defects such as bridges can be suppressed.
1 . A substrate processing module comprising:
a housing;
a stage disposed within the housing;
lifter pins disposed within the stage;
a driving unit configured to vertically move the lifter pins;
a gas supply;
a heater;
an exhaust unit; and
a controller configured to:
control the lifter pins so as to mount a substrate on the stage, the substrate including an under layer, a metal-containing resist pattern disposed on the under layer, and remaining metal components attached to an exposed portion of the under layer;
control the gas supply so as to supply a gas into the housing;
control the heater so as to heat the substrate mounted on the stage in a state that the gas is supplied into the housing, to thereby remove the exposed portion of the under layer and the remaining metal components; and
control the exhaust unit so as to exhaust at least one of the removed under layer film and the removed remaining metal components.
2 . The substrate processing module of claim 1 , further comprising an activating source configured to activate the gas within the housing.
3 . The substrate processing module of claim 1 , further comprising a transmission window disposed above the stage and configured to transmit an electric wave for activating the gas within the housing.
4 . The substrate processing module of claim 3 , wherein the transmission window includes a quartz plate.
5 . The substrate processing module of claim 1 , wherein the metal-containing resist pattern is formed by:
exposing a resist on the under layer by extreme ultraviolet (EUV), the resist including organic components; and
developing the exposed resist.
6 . The substrate processing module of claim 5 , wherein the exposed resist is developed by a negative tone development.
7 . The substrate processing module of claim 5 , wherein the exposed resist is developed by a positive tone development.
8 . The substrate processing module of claim 1 , wherein the under layer includes an organic film.
9 . The substrate processing module of claim 1 , wherein the remaining metal components include ions.
10 . A substrate processing module comprising:
a housing;
a stage disposed within the housing;
lifter pins disposed within the stage;
a driving unit configured to vertically move the lifter pins so as to mount a substrate on the stage, the substrate including a under layer, a metal-containing resist pattern disposed on the under layer, and remaining metal components attached to an exposed portion of the under layer;
a gas supply configured to supply a gas into the housing;
a heater configured to heat the substrate mounted on the stage in a state that the gas is supplied into the housing, to thereby remove the exposed portion of the under layer and the remaining metal components; and
an exhaust unit configured to exhaust at least one of the removed under layer and the removed remaining metal components.
11 . The substrate processing module of claim 10 , further comprising an activating source configured to activate the gas within the housing.
12 . The substrate processing module of claim 10 , further comprising a transmission window disposed above the stage and configured to transmit an electric wave for activating the gas within the housing.
13 . The substrate processing module of claim 12 , wherein the transmission window includes a quartz plate.
14 . The substrate processing module of claim 10 , wherein the metal-containing resist pattern is formed by:
exposing a resist on the under layer by extreme ultraviolet (EUV), the resist including organic components; and
developing the exposed resist.
15 . The substrate processing module of claim 14 , wherein the exposed resist is developed by a negative tone development.
16 . The substrate processing module of claim 14 , wherein the exposed resist is developed by a positive tone development.
17 . The substrate processing module of claim 10 , wherein the under layer includes an organic film.
18 . The substrate processing module of claim 10 , wherein the remaining metal components include ions.