Granted Patent B2

US 12,204,254 · App. 16/760,797 · Granted Jan 21, 2025

Inventors: Yoel Feler (Haifa, IL); Mark Ghinovker (Yoqneam Ilit, IL)

Assignee: KLA CORPORATION

G03F7/70683G03F7/70633

Abstract

Claims (72)

1. A multi-layered moiré target useful in the calculation of the misregistration between at least a first layer, a second layer and a third layer, the first layer, second layer and third layer being formed on a semiconductor device wafer, the semiconductor device wafer defining an x-y plane, the multi-layered moiré target comprising:

at least one group of periodic structure stacks, each of said at least one group comprising:

a first stack of periodic structures, comprising at least a first stack first periodic structure (S1P1) formed together with at least one of said first layer, said second layer and said third layer, said S1P1 having an S1P1 pitch along a first axis;

a second stack of periodic structures, comprising at least a second stack first periodic structure (S2P1) formed together with at least one of said first layer, said second layer and said third layer, said S2P1 having an S2P1 pitch along a second axis; and

a third stack of periodic structures, comprising at least a third stack first periodic structure (S3P1) formed together with at least one of said first layer, said second layer and said third layer, said S3P1 having an S3P1 pitch along a third axis,

within said first stack of periodic structures, said second stack of periodic structures, and said third stack of periodic structures, one of said S1P1, said S2P1, and said S3P1 is disposed at a different one of said first layer, said second layer or said third layer from the other two of said S1P1, said S2P1, and said S3P1 that are disposed at a same one of said first layer, said second layer or said third layer,

said first axis being parallel to either an x-axis or a y-axis when said target is imaged in said x-y plane;

said second axis and said third axis being parallel to said first axis when said target is imaged in said x-y plane, and

at least one of said first, second and third stacks comprising a second periodic structure having a second periodic structure pitch along at least one fourth axis parallel to said first axis and co-axial with one of said first axis, said second axis and said third axis when said target is imaged in said x-y plane.

2. The multi-layered moiré target according to claim 1 and wherein:

said first layer defines a first generally planar surface parallel to said x-y plane;

said second layer defines a second generally planar surface parallel to said x-y plane;

said third layer defines a third generally planar surface parallel to said x-y plane;

said first axis lies in a first plane parallel to one of an x-z plane or a y-z plane, said one of an x-z plane or a y-z plane, together with said x-y plane, defining a three-dimensional x-y-z coordinate system;

said second axis lies in a second plane parallel to said first plane;

said third axis lies in a third plane parallel to said first plane; and

said at least one fourth axis lies in a respective one of said first plane, said second plane and said third plane and is parallel to a respective one of said first axis, said second axis or said third axis.

3. The multi-layered moiré target according to claim 1 and wherein:

said first stack of periodic structures comprises said S1P1 formed together with said first layer and a first stack second periodic structure (S1P2) formed together with said second layer, said S1P2 having an S1P2 pitch along a first one of said at least one fourth axis being co-axial with said first axis when said target is imaged in said x-y plane;

said second stack of periodic structures comprises said S2P1 formed together with said second layer and a second stack second periodic structure (S2P2) formed together with said third layer, said S2P2 having an S2P2 pitch along a second one of said at least one fourth axis being co-axial with said second axis when said target is imaged in said x-y plane; and

said third stack of periodic structures comprises said S3P1 formed together with said first layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having an S3P2 pitch along a third one of said at least one fourth axis when said target is imaged in said x-y plane.

4. The multi-layered moiré target according to claim 3 and wherein:

said S2P1 pitch is related to said S1P2 pitch by a second stack multiplicative factor;

said S2P2 pitch is related to said S1P1 pitch by said second stack multiplicative factor;

said S3P1 pitch is related to said S1P1 pitch by a third stack multiplicative factor; and

said S3P2 pitch is related to said S1P2 pitch by said third stack multiplicative factor, wherein said second stack multiplicative factor is equal to one and said third stack multiplicative factor is equal to one.

5. The multi-layered moiré target according to claim 1 and wherein:

said first stack of periodic structures comprises said S1P1 formed together with said first layer and a first stack second periodic structure (S1P2) formed together with said second layer, said S1P2 having an S1P2 pitch along a first one of said at least one fourth axis;

said second stack of periodic structures comprises said S2P1 formed together with said first layer and a second stack second periodic structure (S2P2) formed together with said second layer, said S2P2 having an S2P2 pitch along a second one of said at least one fourth axis; and

said third stack of periodic structures comprises said S3P1 formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having an S3P2 pitch along a third one of said at least one fourth axis.

6. The multi-layered moiré target according to claim 5 and wherein

said S3P1 pitch is related to said S2P2 pitch by a third stack multiplicative factor; and

said S3P2 pitch is related to said S2P1 pitch by said third stack multiplicative factor, wherein said third stack multiplicative factor is equal to one, said S1P1 pitch is the same as said S2P2 pitch, and said S1P2 pitch is the same as said S2P1 pitch.

7. The multi-layered moiré target according to claim 5 and wherein

said S1P1 pitch is the same as said S2P1 pitch;

said S1P2 pitch differs from said S1P1 pitch by an additive term;

said S2P2 pitch differs from said S1P1 pitch by said additive term;

said S3P1 pitch differs from said S1P1 pitch by said additive term; and

said S3P2 pitch is the same as said S1P1 pitch.

8. The multi-layered moiré target according to claim 1 and wherein:

said first stack of periodic structures comprises said S1P1 formed together with said first layer and a first stack second periodic structure (S1P2) formed together with said second layer, said S1P2 having an S1P2 pitch along a first one of said at least one fourth axis;

said second stack of periodic structures comprises said S2P1 formed together with said first layer and a second stack second periodic structure (S2P2) formed together with said second layer, said S2P2 having an S2P2 pitch along a second one of said at least one fourth axis; and

said third stack of periodic structures comprises said S3P1 formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said first layer, said S3P2 having an S3P2 pitch along a third one of said at least one fourth axis.

9. The multi-layered moiré target according to claim 1 and wherein:

said first stack of periodic structures comprises said S1P1 formed together with said second layer;

said second stack of periodic structures comprises said S2P1 formed together with said first layer and a second stack second periodic structure (S2P2) formed together with said second layer, said S2P2 having an S2P2 pitch along a second one of said at least one fourth axis; and

said third stack of periodic structures comprises said S3P1 formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having an S3P2 pitch along a third one of said at least one fourth axis.

10. The multi-layered moiré target according to claim 9 and wherein

said S2P1 pitch is the same as said S3P2 pitch; and

said S2P2 pitch is the same as said S3P1 pitch.

11. The multi-layered moiré target according to claim 1 and wherein:

said first stack of periodic structures comprises said S1P1 formed together with said second layer;

said second stack of periodic structures comprising said S2P1 formed together with said first layer; and

said third stack of periodic structures comprises said S3P1 formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having an S3P2 pitch along said at least one fourth axis.

12. The multi-layered moiré target according to claim 1 and wherein:

said first stack of periodic structures comprises said S1P1 formed together with said first layer;

said second stack of periodic structures comprising said S2P1 formed together with said first layer; and

said third stack of periodic structures comprises said S3P1 formed together with said first layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having an S3P2 pitch along said at least one fourth axis.

13. The multi-layered moiré target according to claim 1 and wherein:

said first stack of periodic structures comprises said S1P1 formed together with said second layer;

said second stack of periodic structures comprising said S2P1 formed together with said first layer; and

said third stack of periodic structures comprises said S3P1 formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said first layer, said S3P2 having an S3P2 pitch along said at least one fourth axis.

14. The multi-layered moiré target according to claim 1 and wherein:

said first stack of periodic structures comprises said S1P1 formed together with said first layer;

said second stack of periodic structures comprises said S2P1 formed together with said first layer and a second stack second periodic structure (S2P2) formed together with said second layer, said S2P2 having an S2P2 pitch along a first one of said at least one fourth axis; and

said third stack of periodic structures comprises said S3P1 formed together with said second layer and a third stack second periodic structure (S3P2) formed together with said third layer, said S3P2 having an S3P2 pitch along a second one of said at least one fourth axis.

15. The multi-layered moiré target according to claim 1 and wherein:

said at least one group of periodic structure stacks includes:

at least one first group of periodic stacks in which said first axis is parallel to said x-axis when said target is imaged in said x-y plane; and

at least one second group of periodic stacks in which said first axis is parallel to said y-axis when said target is imaged in said x-y plane.

16. The multi-layered moiré target according to claim 15 and wherein said at least one first group of periodic stacks and said at least one second group of periodic stacks are identical except for their orientation.

17. The multi-layered moiré target according to claim 15 and wherein said target is characterized by mirror symmetry or said target is characterized by rotational symmetry.

Assignments (1)

Continuity (3)

References Cited (27)