Semiconductor device manufacturing method, curable resin composition for temporary fixation material, film for temporary fixation material, and laminated film for temporary fixation material
Disclosed is a semiconductor device manufacturing method, including a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order, and a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member.
1. A semiconductor device manufacturing method, the method comprising:
a preparation step of preparing a laminated body in which a supporting member, a temporary fixation material layer that generates heat upon absorbing light, and a semiconductor member are laminated in this order; and
a separation step of irradiating the temporary fixation material layer in the laminated body with incoherent light and thereby separating the semiconductor member from the supporting member,
wherein the supporting member is a glass substrate.
2. The semiconductor device manufacturing method according to claim 1 , wherein a light source for the incoherent light in the separation step is a xenon lamp.
3. The semiconductor device manufacturing method according to claim 1 , wherein the incoherent light in the separation step is light including at least infrared light.
4. The semiconductor device manufacturing method according to claim 1 , wherein the separation step is a step of irradiating the temporary fixation material layer with the incoherent light through the supporting member.
5. The semiconductor device manufacturing method according to claim 1 , wherein the temporary fixation material layer contains a cured product of a curable resin composition including electroconductive particles that generate heat upon absorbing light.
6. The semiconductor device manufacturing method according to claim 5 , wherein a content of the electroconductive particles is 30 to 90 parts by mass with respect to a total amount of 100 parts by mass of components other than the electroconductive particles in the curable resin composition.
7. The semiconductor device manufacturing method according to claim 5 , wherein the curable resin composition further includes a thermoplastic resin.
8. The semiconductor device manufacturing method according to claim 5 , wherein the curable resin composition further includes a polymerizable monomer and a polymerization initiator.
9. The semiconductor device manufacturing method according to claim 1 , wherein the temporary fixation material layer has a light absorbing layer that generates heat upon absorbing light.
10. The semiconductor device manufacturing method according to claim 9 , wherein the light absorbing layer is formed by sputtering or vacuum vapor deposition.
11. The semiconductor device manufacturing method according to claim 9 , wherein the temporary fixation material layer further has a resin cured product layer including a cured product of a curable resin component.