Semiconductor device and method of manufacturing the same
A semiconductor device having a standard cell, includes a first power supply line, a second power supply line, a first gate-all-around field effect transistor (GAA FET) disposed over a substrate, and a second GAA FET disposed above the first GAA FET. The first power supply line and the second power supply line are located at vertically different levels from each other.
1. A semiconductor device having a standard cell, comprising:
a first power supply line;
a second power supply line;
a first gate-all-around field effect transistor (GAA FET) disposed over a substrate; and
a second GAA FET disposed above the first GAA FET, wherein:
the first GAA FET and the second GAA FET share a gate, and
the first power supply line and the second power supply line are located at vertically different levels from each other,
one of the first power supply line and the second power supply line is located below the first GAA FET, and
the other of first power supply line and the second power supply line is located above the second GAA FET.
2. The semiconductor device of claim 1 , wherein the one of the first power supply line and the second power supply line located below the first GAA FET is coupled to the first GAA FET through a bottom via contact.
3. The semiconductor device of claim 2 , wherein the bottom via contact is in contact with an upper surface of the one of the first power supply line and the second power supply line located below the first GAA FET.
4. The semiconductor device of claim 1 , wherein the other of the first power supply line and the second power supply line located above the second GAA FET is coupled to the second GAA FET through a top via contact.
5. The semiconductor device of claim 1 , wherein:
the first GAA FET is an n-type FET, and the second GAA FET is a p-type FET,
the first power supply line supplies a lower potential than the second power supply line, and
the first power supply line is located below the first GAA FET and the second power supply line is located above the second GAA FET.
6. The semiconductor device of claim 1 , wherein:
the first GAA FET is a p-type FET, and the second GAA FET is an n-type FET,
the first power supply line supplies a higher potential than the second power supply line, and
the first power supply line is located below the first GAA FET and the second power supply line is located above the second GAA FET.
7. The semiconductor device of claim 1 , wherein the first GAA FET and the second GAA FET are different conductivity type from each other.
8. A semiconductor device having a standard cell, comprising:
a first power supply line;
a second power supply line;
a first gate-all-around field effect transistor (GAA FET) disposed over a substrate; and
a second GAA FET disposed above the first GAA FET, wherein:
the first GAA FET and the second GAA FET share a gate,
the first power supply line and the second power supply line are located at vertically different levels from each other,
one of the first power supply line and the second power supply line is located at a same level as the first GAA FET,
the other of first power supply line and the second power supply line is located above the second GAA FET,
the other of the first power supply line and the second power supply line located above the second GAA FET is coupled to the second GAA FET through a top via contact, and
the top via contact is in contact with a bottom surface of the other of the first power supply line and the second power supply line located above the second GAA FET.
9. The semiconductor device of claim 8 , wherein:
the first GAA FET is an n-type FET, and the second GAA FET is a p-type FET,
the first power supply line supplies a lower potential than the second power supply line, and
the first power supply line is located at the same level as the first GAA FET and the second power supply line is located above the second GAA FET.
10. The semiconductor device of claim 9 , wherein:
the first GAA FET includes a source contact in contact with a source of the first GAA FET, and
the first power supply line is directly connected to the source contact.
11. The semiconductor device of claim 8 , wherein:
the first GAA FET is a p-type FET, and the second GAA FET is an n-type FET,
the first power supply line supplies a higher potential than the second power supply line, and
the first power supply line is located at the same level as the first GAA FET and the second power supply line is located above the second GAA FET.
12. The semiconductor device of claim 11 , wherein:
the first GAA FET includes a drain contact in contact with a drain of the first GAA FET, and
the first power supply line is directly connected to the drain contact.
13. A semiconductor device having a standard cell, comprising:
a first power supply line;
a second power supply line;
a first gate-all-around field effect transistor (GAA FET) disposed over a substrate; and
a second GAA FET disposed above the first GAA FET, wherein:
the first GAA FET and the second GAA FET share a gate,
the first power supply line and the second power supply line are located at vertically different levels from each other,
one of the first power supply line and the second power supply line is located at a same level as the first GAA FET, and
the other of first power supply line and the second power supply line is located at a same level as the second GAA FET.
14. The semiconductor device of claim 13 , wherein:
the first GAA FET is an n-type FET, and the second GAA FET is a p-type FET,
the first power supply line supplies a lower potential than the second power supply line, and
the first power supply line is located at the same level as the first GAA FET and the second power supply line is located at the same level as the second GAA FET.
15. The semiconductor device of claim 14 , wherein:
the first GAA FET includes a source contact in contact with a source of the first GAA FET,
the second GAA FET includes a drain contact in contact with a drain of the second GAA FET,
the first power supply line is directly connected to the source contact, and
the second power supply line is directly connected to the drain contact.
16. The semiconductor device of claim 13 , wherein:
the first GAA FET is a p-type FET, and the second GAA FET is an n-type FET,
the first power supply line supplies a higher potential than the second power supply line, and
the first power supply line is located at the same level as the first GAA FET and the second power supply line is located at the same level as the second GAA FET.
17. The semiconductor device of claim 16 , wherein:
the first GAA FET includes a drain contact in contact with a drain of the first GAA FET,
the second GAA FET includes a source contact in contact with a source of the first GAA FET,
the first power supply line is directly connected to the drain contact, and
the second power supply line is directly connected to the source contact.
18. The semiconductor device of claim 13 , wherein the first power supply line and the second power supply line are located on a same side with respect to the gate.
19. A semiconductor device having a standard cell, comprising:
a first power supply line;
a second power supply line;
a first gate-all-around field effect transistor (GAA FET) disposed over a substrate; and
a second GAA FET disposed above the first GAA FET, wherein:
the first GAA FET and the second GAA FET share a gate, and
the first power supply line and the second power supply line are located at vertically different levels from each other,
one of the first power supply line and the second power supply line is located below the first GAA FET, and
the other of first power supply line and the second power supply line is located at a same level as the second GAA FET.
20. The semiconductor device of claim 19 , wherein:
the one of the first power supply line and the second power supply line located below the first GAA FET is coupled to the first GAA FET through a bottom via contact, and
the bottom via contact is in contact with an upper surface of the one of the first power supply line and the second power supply line located below the first GAA FET.