Method of improving read current stability in analog non-volatile memory by limiting time gap between erase and program
View Patent ↗A memory device having non-volatile memory cells and a controller. In response to a first command for erasing and programming a first group of the memory cells, the controller determines the first group can be programmed within substantially 10 seconds of their erasure, erases the first group, and programs the first group within substantially 10 seconds of their erasure. In response to a second command for erasing and programming a second group of the memory cells, the controller determines that the second group cannot be programmed within substantially 10 seconds of their erasure, divides the second group into subgroups of the memory cells each of which can be programmed within substantially 10 seconds of their erasure, and for each of the subgroups, erase the subgroup and program the subgroup within substantially 10 seconds of their erasure.
1. A memory device comprising:
a plurality of non-volatile memory cells;
a controller configured to:
receive a first command for erasing and programming a first group of the memory cells,
determine that the first group of the memory cells can be programmed within substantially 10 seconds of erasure of the first group of the memory cells,
erase the first group of memory cells in a group erase operation,
program the first group of memory cells within substantially 10 seconds of the group erase operation,
receive a second command for erasing and programming a second group of the memory cells,
determine that the second group of the memory cells cannot be programmed within substantially 10 seconds of erasure of the second group of the memory cells,
divide the second group of the memory cells into a plurality of subgroups of the memory cells, wherein each one of the subgroups can be programmed within substantially 10 seconds of erasure of the respective one subgroup of the memory cells, and
for each of the subgroups of the memory cells:
erase the subgroup of memory cells in a subgroup erase operation, and
program the subgroup of memory cells within substantially 10 seconds of the subgroup erase operation.
2. The device of claim 1 , wherein the controller is further configured to simultaneously erase at least all of the memory cells in the first group of the memory cells in the group erase operation.
3. The device of claim 1 , wherein for each of the subgroups of the memory cells, the controller is further configured to simultaneously erase at least all of the memory cells in the subgroup of the memory cells in the subgroup erase operation.
4. The device of claim 1 , wherein the controller is configured to determine that the first group of the memory cells can be programmed within substantially 10 seconds of erasure of the first group of the memory cells based on a number of the memory cells in the first group of the memory cells does not exceed a predetermined number, and to determine that the second group of the memory cells cannot be programmed within substantially 10 seconds of erasure of the second group of the memory cells based on a number of the memory cells in the second group of the memory cells does exceed the predetermined number.
5. The device of claim 1 , wherein each of the memory cells comprises:
spaced apart source and drain regions formed in a semiconductor substrate, with a channel region of the substrate extending there between,
a floating gate disposed vertically over and insulated from a first portion of the channel region,
a select gate disposed vertically over and insulated from a second portion of the channel region, and
a control gate disposed vertically over and insulated from the floating gate.
6. The device of claim 5 , wherein each of the memory cells further comprises:
an erase gate disposed over and insulated from the source region.
7. A method of operating a memory device having a plurality of non-volatile memory cells, comprising:
receiving a first command for erasing and programming a first group of the memory cells,
determining that the first group of the memory cells can be programmed within substantially 10 seconds of erasure of the first group of the memory cells,
erasing the first group of memory cells in a group erase operation,
programming the first group of memory cells within substantially 10 seconds of the group erase operation,
receiving a second command for erasing and programming a second group of the memory cells,
determining that the second group of the memory cells cannot be programmed within substantially 10 seconds of erasure of the second group of the memory cells,
dividing the second group of the memory cells into a plurality of subgroups of the memory cells, wherein each one of the subgroups can be programmed within substantially 10 seconds of erasure of the respective one subgroup of the memory cells, and
for each of the subgroups of the memory cells:
erasing the subgroup of memory cells in a subgroup erase operation, and
programming the subgroup of memory cells within substantially 10 seconds of the subgroup erase operation.
8. The method of claim 7 , wherein the erasing the first group of memory cells further comprises simultaneously erasing at least all of the memory cells in the first group of the memory cells.
9. The method of claim 7 , wherein for each of the subgroups of the memory cells, the erasing the subgroup of the memory cells further comprises simultaneously erasing at least all of the memory cells in the subgroup of the memory cells.
10. The method of claim 7 , wherein the determining that the first group of the memory cells can be programmed within substantially 10 seconds of erasure of the first group of the memory cells is based on a number of the memory cells in the first group of the memory cells does not exceed a predetermined number, and the determining that the second group of the memory cells cannot be programmed within substantially 10 seconds of erasure of the second group of the memory cells is based on a number of the memory cells in the second group of the memory cells does exceed the predetermined number.
11. The method of claim 7 , wherein each of the memory cells comprises:
spaced apart source and drain regions formed in a semiconductor substrate, with a channel region of the substrate extending there between,
a floating gate disposed vertically over and insulated from a first portion of the channel region,
a select gate disposed vertically over and insulated from a second portion of the channel region, and
a control gate disposed vertically over and insulated from the floating gate.
12. The method of claim 11 , wherein each of the memory cells further comprises:
an erase gate disposed over and insulated from the source region.