Semiconductor device with top die positioned to reduce die cracking
A semiconductor device is disclosed including a die stack including a number of dies aligned with each other with respect to an axis, and a top die that is offset along the axis the to prevent die cracking.
1. A semiconductor device, comprising:
a plurality of semiconductor dies stacked on each other, the plurality of semiconductor dies each comprising:
an interior portion having a first thickness, and
an exterior portion along first and second opposed edges having a second thickness less than the first thickness;
wherein the plurality of semiconductor dies comprise first and second semiconductor dies, the first semiconductor die stacked on top of the second semiconductor die, the first semiconductor die is offset along a first axis with respect to the second semiconductor die, the amount of the offset positioning the exterior portion of the first semiconductor die at the first edge over the thicker interior portion of the second semiconductor die.
2. The semiconductor device of claim 1 , wherein the interior portion of the first semiconductor die at the second edge overhangs the exterior portion of the next lower die.
3. The semiconductor device of claim 1 , wherein the difference in thicknesses between the interior portion and exterior portion is that the interior portion includes a polyimide/passivation layer extending above a surface of the exterior portion.
4. The semiconductor device of claim 3 , wherein exterior portion is a portion of a dicing street where the plurality of semiconductor dies are diced from a wafer.
5. The semiconductor device of claim 1 , wherein the plurality of semiconductor dies in the stack are offset from each other in a stepped configuration along a second axis orthogonal to the first axis.
6. The semiconductor device of claim 5 , wherein the plurality of semiconductor dies in the stack are offset from each other in the same direction along the second axis in the stepped configuration.
7. The semiconductor device of claim 5 , wherein some of the plurality of semiconductor dies in the stack are offset from each other in a first direction along the second axis in the stepped configuration, and wherein some of the plurality of semiconductor dies in the stack are offset from each other in a second direction, opposite the first direction, along the second axis in the stepped configuration.
8. The semiconductor device of claim 5 , further comprising wire bonds extending along the second direction between corresponding die bond pads on the plurality of semiconductor dies in the stack.
9. The semiconductor device of claim 1 , wherein the plurality of dies comprise a group of one or more dies in addition to the first and second semiconductor dies, the group of one or more dies being vertically aligned along the first axis with the second semiconductor die.
10. The semiconductor device of claim 9 , wherein the first semiconductor die is the uppermost semiconductor die in the plurality of stacked semiconductor dies.
11. The semiconductor device of claim 1 , wherein the plurality of semiconductor dies are one of 2D NAND flash memories or 3D Bit Cost Scaling flash memories.
12. A semiconductor device, comprising:
a group of three or more semiconductor dies, the semiconductor dies in the group of semiconductor dies each comprising:
an interior portion having a first thickness, and
an exterior portion along first and second opposed edges having a second thickness less than the first thickness;
wherein the group of semiconductor dies are stacked on top of each other in a stack and configured to add strength and resistance to cracking of an uppermost semiconductor die by vertically aligning a sub-group of the group of semiconductor dies below the uppermost semiconductor die with each other with respect to a first axis, and offsetting the uppermost die along the first axis with respect to the next lower die in the sub-group of semiconductor dies, the amount of the offset positioning the exterior portion of the uppermost die at the first edge over the interior portion of the next lower die.
13. The semiconductor device of claim 12 , wherein the interior portion of the uppermost die at the second edge overhangs the exterior portion of the next lower die.
14. The semiconductor device of claim 12 , wherein the difference in thicknesses between the interior portion and exterior portion is that the interior portion includes a polyimide/passivation layer extending above a surface of the exterior portion.
15. The semiconductor device of claim 12 , wherein the first edge of the exterior portion of the uppermost semiconductor die is vertically aligned over an edge of the interior portion of the next lower die.
16. The semiconductor device of claim 12 , wherein the group of semiconductor dies in the stack are offset from each other in a stepped configuration along a second axis orthogonal to the first axis.
17. The semiconductor device of claim 16 , wherein the group of semiconductor dies in the stack are offset from each other in the same direction along the second axis in the stepped configuration.
18. The semiconductor device of claim 16 , wherein some of the group of semiconductor dies in the stack are offset from each other in a first direction along the second axis in the stepped configuration, and wherein some of the group of semiconductor dies in the stack are offset from each other in a second direction, opposite the first direction, along the second axis in the stepped configuration.
19. The semiconductor device of claim 16 , further comprising wire bonds extending along the second direction between corresponding die bond pads on the group of semiconductor dies in the stack.
20. A semiconductor device, comprising:
a group of three or more semiconductor dies, the plurality of semiconductor dies each comprising:
an interior portion having a first thickness, and
an exterior portion along first and second opposed edges having a second thickness less than the first thickness;
wherein the group of semiconductor dies are stacked on top of each other;
means for adding strength and resistance to cracking of an uppermost semiconductor die by vertically aligning a sub-group of semiconductor dies from the group of semiconductor dies below an uppermost semiconductor die each other with respect to a first axis, and offsetting the uppermost die along the first axis with respect to a next lower die in the sub-group, the amount of the offset positioning the exterior portion of the uppermost die at the first edge over the interior portion of the next lower die.