Chip package structure having warpage control and method of forming the same
A package structure and a method of forming the same are provided. The package structure includes a package substrate, an interposer substrate, a first semiconductor device, a second semiconductor device, and a protective layer. The interposer substrate is disposed over the package substrate. The first semiconductor device and the second semiconductor device are disposed over the interposer substrate, wherein the first semiconductor device and the second semiconductor device are different types of electronic devices. The protective layer is formed over the interposer substrate to surround the first semiconductor device and the second semiconductor device. The second semiconductor device is exposed from the protective layer and the first semiconductor device is not exposed from the protective layer.
1. A package structure, comprising:
a package substrate;
an interposer substrate disposed over the package substrate;
a first semiconductor device and a second semiconductor device disposed over the interposer substrate, wherein the first semiconductor device and the second semiconductor device are different types of electronic devices;
a cover film covering a top surface of the first semiconductor device; and
a protective layer formed over the interposer substrate to surround the first semiconductor device and the second semiconductor device, wherein the second semiconductor device is exposed from the protective layer and the first semiconductor device is not exposed from the protective layer, wherein the protective layer has a cover portion that covers a top surface of the cover film above the first semiconductor device, and the cover film has a greater hardness than that of the cover portion.
2. The package structure as claimed in claim 1 , wherein the cover film comprises a different material from the protective layer.
3. The package structure as claimed in claim 1 , wherein the cover film is disposed directly on the top surface of the first semiconductor device.
4. The package structure as claimed in claim 1 , wherein the cover film covers a part of the top surface of the first semiconductor device.
5. The package structure as claimed in claim 1 , wherein the cover film covers the entire top surface of the first semiconductor device.
6. The package structure as claimed in claim 1 , wherein the top surface of the cover film is in direct contact with the cover portion.
7. A package structure, comprising:
a package substrate;
an interposer substrate disposed over the package substrate;
a first semiconductor device and a second semiconductor device disposed over the interposer substrate;
a cover film formed on and in direct contact with a top surface of the first semiconductor device; and
a protective layer formed over the interposer substrate to surround the first semiconductor device, the cover film and the second semiconductor device, wherein the second semiconductor device is exposed from the protective layer and the first semiconductor device is not exposed from the protective layer, wherein the protective layer has a cover portion that covers a top surface of the cover film, and the cover film has a greater hardness than that of the cover portion.
8. The package structure as claimed in claim 7 , wherein a top surface of the protective layer is flush with a top surface of the second semiconductor device.
9. The package structure as claimed in claim 7 , wherein the cover film covers a part of the top surface of the first semiconductor device.
10. The package structure as claimed in claim 7 , wherein the cover film covers the entire top surface of the first semiconductor device.
11. The package structure as claimed in claim 7 , wherein the cover film comprises a different material from the protective layer.
12. The package structure as claimed in claim 7 , wherein the cover portion covers the entire top surface of the cover film.
13. The package structure as claimed in claim 7 , wherein the top surface of the cover film is closer to a top surface of the protective layer than the top surface of the first semiconductor device.
14. A package structure, comprising:
a package substrate;
an interposer substrate disposed over the package substrate;
a first semiconductor device and a second semiconductor device disposed over a surface of the interposer substrate;
a cover film formed on a top surface of the first semiconductor device; and
a protective layer formed over the interposer substrate to surround the first semiconductor device, the cover film and the second semiconductor device, wherein a top surface of the second semiconductor device is exposed through the protective layer, wherein the protective layer has a cover portion formed on a top surface of the cover film so that the top surface of the cover film is vertically spaced from a top surface of the protective layer, and the cover film has a greater hardness than that of the cover portion.
15. The package structure as claimed in claim 14 , wherein a sum of a height of the first semiconductor device and a height of the cover film in a direction perpendicular to the surface of the interposer substrate is smaller than a height of the second semiconductor device in the direction.
16. The package structure as claimed in claim 14 , wherein the cover film covers and in direct contact with the top surface of the first semiconductor device.
17. The package structure as claimed in claim 14 , wherein the cover film comprises a different material from the protective layer.
18. The package structure as claimed in claim 14 , wherein the cover film covers a part of the top surface of the first semiconductor device.
19. The package structure as claimed in claim 18 , wherein the cover portion is in direct contact with another part of the top surface of the first semiconductor device that is not covered by the cover film.
20. The package structure as claimed in claim 14 , wherein the cover film comprises a metallic material.