IP Library › Granted Patent US 12,266,584
Granted Patent B2
US 12,266,584 · App. 18/363,363 · Granted Apr 1, 2025

Integrated circuit package and method

Inventors: Hsien-Wei Chen (Hsinchu, TW); Ming-Fa Chen (Taichung, TW); Sung-Feng Yeh (Taipei, TW)
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
H01L23/36H01L21/56H01L23/31H01L25/0652H01L27/0688
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Quick Facts
Patent No.
US 12,266,584
App. No.
18/363,363
Granted
Apr 1, 2025
Kind
B2
Abstract

In an embodiment, a device includes: an interposer; a first integrated circuit device attached to the interposer; a second integrated circuit device attached to the interposer adjacent the first integrated circuit device; a heat dissipation die on the second integrated circuit device; and an encapsulant around the heat dissipation die, the second integrated circuit device, and the first integrated circuit device, a top surface of the encapsulant being coplanar with a top surface of the heat dissipation die and a top surface of the first integrated circuit device.

Claims (49)

1. A device comprising:

an interposer;

a first integrated circuit device attached to the interposer;

a second integrated circuit device attached to the interposer adjacent the first integrated circuit device;

a plurality of heat dissipation dies stacked on the second integrated circuit device, the heat dissipation dies comprising an upper heat dissipation die and a lower heat dissipation die, a width of the upper heat dissipation die being greater than a width of the second integrated circuit device, a width of the lower heat dissipation die being greater than the width of the second integrated circuit device; and

an encapsulant around the heat dissipation dies, the second integrated circuit device, and the first integrated circuit device, a top surface of the encapsulant being coplanar with a top surface of the upper heat dissipation die and a top surface of the first integrated circuit device.

2. The device of claim 1 , wherein the top surface of the upper heat dissipation die is disposed the same distance from the interposer as the top surface of the first integrated circuit device.

3. The device of claim 1 , wherein the upper heat dissipation die has a lesser thickness than the lower heat dissipation die.

4. The device of claim 1 , wherein the first integrated circuit device is a first die stack and the second integrated circuit device is a second die stack.

5. The device of claim 1 , wherein the first integrated circuit device is a die stack and the second integrated circuit device is an integrated circuit die.

6. The device of claim 1 further comprising:

a heat spreader on the top surface of the encapsulant, the top surface of the upper heat dissipation die, and the top surface of the first integrated circuit device.

7. A device comprising:

an interposer;

a first die stack bonded to a front side of the interposer;

a second die stack bonded to the front side of the interposer, a top surface of the second die stack disposed closer to the interposer than a top surface of the first die stack;

a heat dissipation die stack on the second die stack, a top surface of the heat dissipation die stack disposed the same distance from the interposer as the top surface of the first die stack, the heat dissipation die stack comprising a plurality of heat dissipation dies, each of the heat dissipation dies being wider than the second die stack; and

a heat spreader on the top surface of the heat dissipation die stack and the top surface of the second die stack.

8. The device of claim 7 , wherein the second die stack comprises:

a first integrated circuit die;

a second integrated circuit die bonded to the first integrated circuit die, the second integrated circuit die comprising first conductive vias;

an encapsulant around the second integrated circuit die; and

a redistribution structure on the encapsulant and the second integrated circuit die, the redistribution structure connected to the first conductive vias and the interposer.

9. The device of claim 8 , wherein the second die stack further comprises:

second conductive vias extending through the encapsulant, the second conductive vias connected to the first integrated circuit die and the redistribution structure.

10. The device of claim 7 , wherein the second die stack comprises:

an encapsulant;

a first integrated circuit die in the encapsulant;

a second integrated circuit die bonded to the first integrated circuit die, the second integrated circuit die comprising conductive vias; and

a redistribution structure on the second integrated circuit die, the redistribution structure connected to the conductive vias and the interposer.

11. The device of claim 7 further comprising:

an encapsulant around the first die stack, the second die stack, and the heat dissipation die stack, a top surface of the encapsulant disposed the same distance from the interposer as the top surface of the first die stack and the top surface of the heat dissipation die stack.

12. A device comprising:

a substrate;

a memory device attached to the substrate;

a logic device attached to the substrate;

a plurality of heat dissipation dies on the logic device, the heat dissipation dies comprising an upper heat dissipation die and a lower heat dissipation die, a width of the upper heat dissipation die being greater than a width of the logic device, a width of the lower heat dissipation die being greater than the width of the logic device; and

an encapsulant around the heat dissipation dies, the logic device, and the memory device, a top surface of the encapsulant being coplanar with a top surface of the upper heat dissipation die and a top surface of the memory device.

13. The device of claim 12 , wherein the upper heat dissipation die has a lesser thickness than the lower heat dissipation die.

14. The device of claim 12 , wherein the substrate is an interposer.

15. The device of claim 12 , wherein the substrate is an integrated circuit die.

16. The device of claim 12 , wherein the logic device and the memory device are each attached to the substrate with solder bonds.

17. The device of claim 12 , wherein the logic device and the memory device are each attached to the substrate with direct bonds.

18. The device of claim 12 , further comprising:

a first adhesive layer between the lower heat dissipation die and the logic device, a width of the first adhesive layer being equal to the width of the logic device.

19. The device of claim 18 , further comprising:

a second adhesive layer between the upper heat dissipation die and the lower heat dissipation die, a width of the second adhesive layer being equal to the width of the upper heat dissipation die and the width of the lower heat dissipation die.

20. The device of claim 12 further comprising:

a heat spreader on the top surface of the encapsulant, the top surface of the upper heat dissipation die, and the top surface of the memory device, wherein the upper heat dissipation die comprises a first metal, the heat spreader comprises a second metal, and the second metal is different from the first metal.

Continuity (3)
Division 17314618 · May 7, 2021
Provisional Application 63165280 · Mar 24, 2021
Related Publication 20230378015A1 · Nov 23, 2023
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