COWOS structures and method of forming the same

1. A method, comprising:

attaching a first die and a second die to an interposer;

attaching a first substrate to a first surface of the first die and a first surface of the second die, the first substrate comprising silicon, the first surface of the first die being opposite to a second surface of the first die that is attached to the interposer, and the first surface of the second die being opposite to a second surface of the second die that is attached to the interposer;

forming a plurality of electrical connectors over the interposer, each electrical connector of the plurality of electrical connectors being electrically connected to a respective through via of a plurality of through vias comprised in the interposer, wherein the first substrate physically supports the interposer during the forming of the plurality of electrical connectors;

bonding the interposer to a second substrate using the plurality of electrical connectors; and

attaching a heat dissipation lid to the second substrate, the interposer being disposed in an inner cavity of the heat dissipation lid.

2. The method according to claim 1 , further comprising:

applying a thermal interface material to a surface of the first substrate; and

wherein the first substrate is disposed in an inner cavity of the heat dissipation lid.

3. The method according to claim 2 , further comprising bonding a surface mounted device (SMD) to the second substrate, wherein the SMD is in the inner cavity of the heat dissipation lid after the heat dissipation lid is attached to the second substrate.

4. The method according to claim 1 , wherein the first die is a logic die and the second die is a memory die.

5. The method according to claim 1 , wherein the first substrate is bonded to the first surface of the first die and the first surface of the second die using a die attach film.

6. The method according to claim 1 , further comprising:

thinning the interposer;

wherein the first substrate underlies the interposer and provides physical support to the interposer during the thinning.

7. The method according to claim 6 , wherein the thinning exposes the plurality of through vias comprised in the interposer.

8. The method according to claim 1 , further comprising thinning the first substrate.

9. The method according to claim 8 , wherein the first die comprises a first memory die and a second memory die, the first memory die being connected to the second memory die by a connector.

10. The method according to claim 1 , further comprising removing the first substrate before bonding the interposer to the second substrate.

11. A method, comprising:

forming a plurality of through vias in a first substrate;

attaching a plurality of first dies and a plurality of second dies to the first substrate, and coupling the plurality of first dies and the plurality of second dies to the plurality of through vias;

encapsulating the plurality of first dies and the plurality of second dies in a molding material, wherein top surfaces of the plurality of first dies and the plurality of second dies are exposed through the molding material;

attaching a second substrate to the top surfaces of the plurality of first dies and the plurality of second dies that are exposed through the molding material;

thinning the second substrate after attaching the second substrate to the top surfaces of the plurality of first dies and the plurality of second dies; and

bonding the first substrate to a third substrate.

12. The method of claim 11 , further comprising attaching a lid to the third substrate, a first die of the plurality of first dies and a second die of the plurality of second dies being disposed in a cavity of the lid.

13. The method according to claim 12 , wherein the second substrate is disposed within the cavity of the lid.

14. The method according to claim 11 , further comprising singulating the first substrate, wherein after the singulation, a first die of the plurality of first dies and a second die of the plurality of second dies are attached to a portion of the first substrate that is subsequently bonded to the third substrate.

15. The method according to claim 11 , forming a plurality of electrical connectors over the first substrate, each electrical connector of the plurality of electrical connectors being electrically connected to a through via of the plurality of through vias in the first substrate;

wherein the second substrate physically supports the first substrate during the forming of the plurality of electrical connectors.

16. A device, comprising:

a first substrate;

an interposer bonded to the first substrate by a plurality of connectors, wherein an underfill extends along sidewalls of the plurality of connectors and along sidewalls of the interposer;

a first die and a second die bonded to the interposer;

a molding material extending along sidewalls of the first die and the second die, wherein top surfaces of the first die and the second die are exposed through the molding material; and

a second substrate attached to the top surfaces of the first die and the second die that are exposed through the molding material, the second substrate comprising silicon.

17. The device according to claim 16 , further comprising:

a heat dissipation lid bonded to the first substrate, wherein the interposer, the first die, the second die, and the second substrate are each disposed within an inner cavity of the heat dissipation lid.

18. The device according to claim 17 , further comprising a surface mounted device (SMD) disposed within the inner cavity of the heat dissipation lid.

19. The device according to claim 17 , wherein a thermal interface material extends between the first die and the heat dissipation lid, and between the second die and the heat dissipation lid.

20. The device according to claim 16 , wherein the interposer comprises a plurality of redistribution layers and a plurality of through vias, and wherein the plurality of redistribution layers are disposed between the plurality of through vias and the first die.