Acoustic wave filters with isolation
Embodiments of this disclosure relate to reducing coupling between acoustic wave resonators. An isolation region of a substrate can be located between acoustic wave resonators. The isolation region can reduce capacitive coupling through the substrate between the acoustic wave resonators. In certain embodiments, the isolation region can be located between acoustic wave resonators of different filters to thereby increase isolation between the filters.
1. An acoustic wave filter assembly with improved isolation between filters, the acoustic wave filter assembly comprising:
a first acoustic wave filter configured to filter a first radio frequency signal;
a second acoustic wave filter configured to filter a second radio frequency signal, the first acoustic wave filter and the second acoustic wave filter sharing a substrate; and
an isolation region of the substrate arranged to cause capacitive coupling between the first acoustic wave filter and the second acoustic wave filter to be reduced, the isolation region having a lower dielectric constant than other regions of the substrate.
2. The acoustic wave filter assembly of claim 1 wherein the isolation region extends through only part of a thickness of the substrate.
3. The acoustic wave filter assembly of claim 1 wherein the isolation region extends between a first surface acoustic wave resonator of the first acoustic wave filter and a second acoustic wave resonator of the second acoustic wave filter.
4. The acoustic wave filter assembly of claim 1 wherein the substrate has a crystalline structure that is disrupted in the isolation region.
5. The acoustic wave filter assembly of claim 1 wherein the first acoustic wave filter is a surface acoustic wave filter.
6. The acoustic wave filter assembly of claim 1 wherein the substrate is a lithium niobate substrate.
7. The acoustic wave filter assembly of claim 1 wherein the substrate is a lithium tantalate substrate.
8. The acoustic wave filter assembly of claim 1 wherein the first acoustic wave filter and the second acoustic wave filter are coupled together at a common node and included in a multiplexer.
9. The acoustic wave filter assembly of claim 1 wherein the isolation region is formed by applying laser light to the substrate.
10. An acoustic wave filter assembly with improved isolation between filters, the acoustic wave filter assembly comprising:
a multiplexer including a transmit filter and a receive filter coupled to each other at a common node, the transmit filter including first acoustic wave resonators, the receive filter including second acoustic wave resonators, and the transmit filter and the receive filter sharing a piezoelectric substrate; and
an isolation region of the piezoelectric substrate arranged to cause capacitive coupling between the transmit filter and the receive filter to be reduced, the isolation region having a lower dielectric constant than other regions of the piezoelectric substrate.
11. The acoustic wave filter assembly of claim 10 wherein the multiplexer is a duplexer.
12. The acoustic wave filter assembly of claim 10 wherein the piezoelectric substrate has a crystalline structure that is disrupted in the isolation region.
13. An acoustic wave resonator assembly with improved isolation, the acoustic wave resonator assembly comprising:
a first acoustic wave resonator;
a second acoustic wave resonator, the first acoustic wave resonator and the second acoustic wave resonator sharing a substrate; and
an isolation region of the substrate arranged to cause capacitive coupling between the first acoustic wave resonator and the second acoustic wave resonator to be reduced, the isolation region having a lower dielectric constant than other regions of the substrate.
14. The acoustic wave resonator assembly of claim 13 wherein the isolation region extends through only part of a thickness of the substrate.
15. The acoustic wave resonator assembly of claim 13 wherein the substrate has a crystalline structure that is disrupted in the isolation region.
16. The acoustic wave resonator assembly of claim 13 wherein the first acoustic wave resonator is a surface acoustic wave resonator.
17. The acoustic wave resonator assembly of claim 13 wherein the substrate is a lithium based piezoelectric substrate.
18. The acoustic wave resonator assembly of claim 13 wherein the first acoustic wave resonator is included in a different acoustic wave filter than the second acoustic wave resonator.
19. The acoustic wave resonator assembly of claim 13 wherein the first acoustic wave resonator and the second acoustic wave resonator are included in a single acoustic wave filter.
20. The acoustic wave resonator assembly of claim 13 wherein the isolation region is formed by applying laser light to the substrate.