Acoustic wave device having mass loading strip with buffer layer
An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode formed with the piezoelectric layer, a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode includes a bus bar and fingers that extend from the bus bar. The fingers each includes an edge portion and a body portion. The acoustic wave device can include a mass loading strip overlaps the edge portions of the fingers. The acoustic wave device can include a portion of the temperature compensation layer is positioned between the mass loading strip and the piezoelectric layer. The acoustic wave device can include a buffer layer that is disposed at least partially between the mass loading strip and the temperature compensation layer. A thickness of the buffer layer can be at least one forth a thickness of the mass loading strip. The buffer layer can be disposed at least partially between a bottom side, a top side, and a side wall of the mass loading strip and the temperature compensation layer.
1 . An acoustic wave device comprising:
a piezoelectric layer;
an interdigital transducer electrode formed with the piezoelectric layer, the interdigital transducer electrode including a bus bar and fingers extending from the bus bar, the fingers each including an edge portion and a body portion;
a temperature compensation layer over the interdigital transducer electrode;
a mass loading strip overlapping the edge portions of the fingers, a portion of the temperature compensation layer being positioned between the mass loading strip and the piezoelectric layer; and
a buffer layer disposed at least partially between the mass loading strip and the temperature compensation layer, a thickness of the buffer layer being at least one forth a thickness of the mass loading strip.
2 . The acoustic wave device of claim 1 wherein the mass loading strip includes a layer having a density that is at least as high as a most dense layer of a material of the interdigital transducer electrode.
3 . The acoustic wave device of claim 2 wherein the mass loading strip consists of the layer.
4 . The acoustic wave device of claim 2 wherein the mass loading strip includes a second layer.
5 . The acoustic wave device of claim 1 wherein the mass loading strip is embedded in the temperature compensation layer.
6 . The acoustic wave device of claim 1 wherein the temperature compensation layer is a silicon dioxide layer.
7 . The acoustic wave device of claim 6 wherein the mass loading strip is a molybdenum layer.
8 . The acoustic wave device of claim 7 wherein the buffer layer is a molybdenum silicide layer.
9 . The acoustic wave device of claim 1 wherein the buffer layer has a coefficient of thermal expansion greater than a coefficient of thermal expansion of the temperature compensation layer and less than a coefficient of thermal expansion of the mass loading strip.
10 . The acoustic wave device of claim 1 wherein the mass loading strip has a bottom side, an top side, and a sidewall extending between the bottom side and the top side, the buffer layer is disposed between the top side and the sidewall of the mass loading strip and the temperature compensation layer.
11 . The acoustic wave device of claim 10 wherein the buffer layer is further disposed between the bottom side of the mass loading strip and the temperature compensation layer.
12 . An acoustic wave device comprising:
a piezoelectric layer;
an interdigital transducer electrode formed with the piezoelectric layer, the interdigital transducer electrode including a bus bar and fingers extending from the bus bar, the fingers each including an edge portion and a body portion;
a temperature compensation layer over the interdigital transducer electrode;
a mass loading strip overlapping the edge portions of the fingers, a portion of the temperature compensation layer being positioned between the mass loading strip and the piezoelectric layer, the mass loading strip having a bottom side, an top side, and a sidewall extending between the bottom side and the top side; and
a buffer layer disposed at least partially between the bottom side, the top side, and the side wall of the mass loading strip and the temperature compensation layer.
13 . The acoustic wave device of claim 12 wherein the mass loading strip includes a layer having a density that is at least as high as a most dense layer of a material of the interdigital transducer electrode.
14 . The acoustic wave device of claim 13 wherein the mass loading strip includes a second layer.
15 . The acoustic wave device of claim 12 wherein the mass loading strip is embedded in the temperature compensation layer.
16 . The acoustic wave device of claim 12 wherein the temperature compensation layer is a silicon dioxide layer.
17 . The acoustic wave device of claim 16 wherein the mass loading strip is a molybdenum layer, and the buffer layer is a molybdenum silicide layer.
18 . The acoustic wave device of claim 12 wherein the buffer layer has a coefficient of thermal expansion greater than a coefficient of thermal expansion of the temperature compensation layer and less than a coefficient of thermal expansion of the mass loading strip.
19 . The acoustic wave device of claim 12 wherein the thickness of the buffer layer is at least one third the thickness of the mass loading strip.
20 . The acoustic wave device of claim 12 further comprising a silicon nitride layer over the temperature compensation layer.