Bulk acoustic wave component with conductor extending laterally from via
Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave components. Such methods include plasma dicing to singulate individual bulk acoustic wave components. A buffer layer can be formed over a substrate of bulk acoustic wave components such that streets are exposed. The bulk acoustic wave components can be plasma diced along the exposed streets to thereby singulate the bulk acoustic wave components.
1. A bulk acoustic wave component comprising:
a substrate having a via extending therethrough;
at least one bulk acoustic wave resonator on the substrate;
a cap enclosing the at least one bulk acoustic wave resonator, the cap including a sidewall spaced apart from an edge of the substrate, the sidewall being 5 microns or less from the edge of the substrate; and
a conductor extending laterally from the via and electrically connected with a conductive layer in the via, the conductor being on an opposite side of the substrate than the at least one bulk acoustic wave resonator, the conductor having solder thereon, and the solder being non-overlapping with the via.
2. The bulk acoustic wave component of claim 1 wherein the sidewall is 3 microns or less from the edge of the substrate.
3. The bulk acoustic wave component of claim 1 wherein the sidewall is at least 1 micron from the edge of the substrate.
4. The bulk acoustic wave component of claim 1 further comprising a buffer layer on the opposite side of the substrate than the at least one bulk acoustic wave resonator, the buffer layer being over a portion of the conductor.
5. The bulk acoustic wave component of claim 4 wherein a portion of the buffer layer is in the via.
6. The bulk acoustic wave component of claim 4 wherein the buffer layer includes a phenol resin.
7. The bulk acoustic wave component of claim 4 wherein the buffer layer includes a polyimide.
8. The bulk acoustic wave component of claim 4 wherein the buffer layer has an etching rate that is at least 30 times slower than silicon for plasma dicing.
9. The bulk acoustic wave component of claim 1 wherein the sidewall includes copper.
10. The bulk acoustic wave component of claim 1 wherein the cap includes a silicon cap substrate, and the substrate is a silicon substrate.
11. The bulk acoustic wave component of claim 1 wherein the conductive layer in the via is a conformal layer.
12. The bulk acoustic wave component of claim 1 wherein the at least one bulk acoustic wave resonator includes a plurality of bulk acoustic wave resonators included in a filter arranged to filter a radio frequency signal.
13. The bulk acoustic wave component of claim 1 further comprising a plurality of additional conductors extending laterally from a plurality of additional vias extending through the substrate, each of the plurality of additional vias having solder thereon.
14. A radio frequency module comprising:
a bulk acoustic wave component including at least one bulk acoustic wave resonator on a substrate, a cap enclosing the at least one bulk acoustic wave resonator and including a sidewall spaced apart from an edge of the substrate by 5 microns or less, and a conductor extending laterally from a via extending through the substrate, the conductor being electrically connected with a conductive layer in the via, and the conductor having solder thereon such that the solder in non-overlapping with the via;
a radio frequency switch connected to a filter than includes the at least one bulk acoustic wave resonator; and
a package enclosing the bulk acoustic wave component and the radio frequency switch.
15. The radio frequency module of claim 14 further comprising a power amplifier configured to output a radio frequency signal, the filter configured to filter a radio frequency signal.
16. The radio frequency module of claim 14 further comprising a radio frequency amplifier, the radio frequency switch being in a signal path between the radio frequency amplifier and the filter.
17. The radio frequency module of claim 14 comprising a multiplexer that includes the filter.
18. A wireless communication device comprising:
an antenna; and
a bulk acoustic wave component including bulk acoustic wave resonators on a substrate, a cap enclosing the bulk acoustic wave resonators and including a sidewall spaced apart from an edge of the substrate by 5 microns or less, and a conductor extending laterally from a via extending through the substrate, the conductor being electrically connected with a conductive layer in the via, the conductor having solder thereon such that the solder in non-overlapping with the via, the bulk acoustic wave resonators being included in a filter in communication with the antenna.
19. The wireless communication device of claim 18 comprising a radio frequency front end and a baseband processor in communication with the radio frequency front end, the filter being included in the radio frequency front end.
20. The wireless communication device of claim 18 wherein the wireless communication device is a mobile phone.