Methods of plasma dicing bulk acoustic wave components

1. A method of manufacturing singulated bulk acoustic wave components, the method comprising:

forming a buffer layer over a substrate of an array of bulk acoustic wave components so as to form exposed streets between individual bulk acoustic wave components, the substrate being a silicon substrate; and

plasma dicing the bulk acoustic wave components along the exposed streets to thereby singulate the bulk acoustic wave components, the buffer layer having an etching rate that is at least 30 times slower than an etching of silicon during the plasma dicing.

2. The method of claim 1 wherein each of the singulated bulk acoustic wave components includes a bulk acoustic wave resonator and a cap enclosing the bulk acoustic wave resonator, and the cap includes a sidewall that is 5 microns or less from an edge of the substrate of the respective singulated bulk acoustic wave component.

3. The method of claim 2 wherein the sidewall is at least 1 micron from the edge of the respective singulated bulk acoustic wave component.

4. The method of claim 1 wherein the plasma dicing includes etching through both the substrate and a cap substrate, a bulk acoustic wave component of the bulk acoustic wave components including a bulk acoustic wave resonator located over the substrate and under the cap substrate.

5. The method of claim 4 wherein the substrate and the cap substrate are silicon substrates.

6. The method of claim 1 further comprising forming a conductor over the substrate, the conductor extending laterally from a via that extends through the substrate, and the conductor being electrically connected to a conductive layer in the via.

7. The method of claim 1 the forming the buffer layer includes forming the exposed streets by way of a photolithographic process.

8. The method of claim 1 wherein the bulk acoustic wave components each include a film bulk acoustic wave resonator.

9. A method of manufacturing singulated bulk acoustic wave components, the method comprising:

forming a buffer layer over a substrate of an array of bulk acoustic wave components so as to form exposed streets between individual bulk acoustic wave components; and

plasma dicing the bulk acoustic wave components along the exposed streets to thereby singulate the bulk acoustic wave components, each of the singulated bulk acoustic wave components including a bulk acoustic wave resonator and a cap enclosing the bulk acoustic wave resonator, and the cap including a sidewall that includes copper and is 5 microns or less from an edge of the substrate of the respective singulated bulk acoustic wave component.

10. The method of claim 9 wherein the substrate is a silicon substrate.

11. The method of claim 10 wherein the buffer layer is a material that etches at least 30 times slower than silicon during the plasma dicing.

12. A method of manufacturing singulated bulk acoustic wave components, the method comprising:

forming a conductor over a substrate of an array of bulk acoustic wave components, the conductor extending laterally from a via that extends through the substrate, and the conductor being electrically connected to a conductive layer in the via;

forming a buffer layer over the substrate so as to form exposed streets between individual bulk acoustic wave components and such that the buffer layer is over at least a portion of the conductor; and

plasma dicing the bulk acoustic wave components along the exposed streets to thereby singulate the bulk acoustic wave components.

13. A method of manufacturing singulated bulk acoustic wave components, the method comprising:

forming a conductor over a substrate of an array of bulk acoustic wave components, the conductor extending laterally from a via that extends through the substrate, and the conductor being electrically connected to a conductive layer in the via;

forming solder over the conductor such that the solder is non-overlapping with the via;

forming a buffer layer over the substrate so as to form exposed streets between individual bulk acoustic wave components; and

plasma dicing the bulk acoustic wave components along the exposed streets to thereby singulate the bulk acoustic wave components.

14. A method of manufacturing bulk acoustic wave components, the method comprising:

providing a first wafer bonded with a second wafer, the first wafer having bulk acoustic resonators thereon, and the second wafer being over and spaced apart from the bulk acoustic resonators;

forming a buffer layer on a side of the first wafer that is opposite to the bulk acoustic wave resonators such that streets are exposed; and

plasma dicing through the first wafer and the second wafer along the exposed streets to form singulated bulk acoustic wave components, the buffer layer having an etching rate that is at least 30 times slower than an etching rate of silicon during the plasma dicing.

15. The method of claim 14 wherein the first wafer and the second wafer are silicon wafers.

16. The method of claim 14 wherein each of the singulated bulk acoustic wave components includes a bulk acoustic wave resonator of the bulk acoustic wave resonators and a cap enclosing the bulk acoustic wave resonator, the cap including a sidewall.

17. The method of claim 16 wherein the sidewall is in a range from 1 micron to 5 microns away from an edge of a substrate of the respective singulated bulk acoustic wave component, the substrate corresponding to a portion of the first wafer prior to plasma dicing.

18. A method of manufacturing bulk acoustic wave components, the method comprising:

forming a buffer layer over a silicon substrate of bulk acoustic wave components such that streets are exposed, the buffer including a resin; and

plasma dicing the bulk acoustic wave components along the exposed streets to thereby singulate the bulk acoustic wave components, the singulated bulk acoustic wave components each including a bulk acoustic wave resonator and a cap enclosing the bulk acoustic wave resonator, the cap including a silicon cap substrate and a sidewall that includes copper and is spaced apart from an edge of the silicon substrate of the respective singulated bulk acoustic wave component by a distance in a range from 1 micron to 5 microns.

19. The method of claim 18 further comprising forming a conductor over the silicon substrate, the conductor extending laterally from a via that extends through the silicon substrate, and the conductor being electrically connected to a conductive layer in the via.

20. The method of claim 18 wherein the bulk acoustic wave resonator is a film bulk acoustic wave resonator.