IP Library › Granted Patent US 12,301,210
Granted Patent B2
US 12,301,210 · App. 17/135,567 · Granted May 13, 2025

Method of making stacked acoustic wave resonator package with laser-drilled vias

Inventors: Atsushi Takano (Kadoma, JP); Mitsuhiro Furukawa (Nishinomiya, JP); Takeshi Furusawa (Toyonaka, JP)
Assignee: Skyworks Solutions, Inc.
H03H9/25H03H3/08H03H9/02574H03H9/145H03H9/6406
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Quick Facts
Patent No.
US 12,301,210
App. No.
17/135,567
Granted
May 13, 2025
Kind
B2
Abstract

A packaged acoustic wave component is disclosed. The packaged acoustic wave component can include a first acoustic wave resonator that includes a first interdigital transducer electrode that is positioned over a first piezoelectric layer. The packaged acoustic wave component can also include a second acoustic wave resonator including a second interdigital transducer electrode positioned over a second piezoelectric layer. The second piezoelectric layer is bonded to the first piezoelectric layer. The packaged acoustic wave component can further include a stopper structure that is positioned over the first piezoelectric layer. The first stopper structure is positioned above a via and extends through the first piezoelectric layer. The stopper structure is in electrical communication with the first interdigital transducer electrode and includes a material which reflects at least fifty percent of light having a wavelength of 355 nanometers.

Claims (36)

1. A method of fabricating a packaged acoustic wave component, the method comprising:

providing a first acoustic wave resonator including a first interdigital transducer electrode on a first piezoelectric layer having a first thickness, the first piezoelectric layer supporting a first stopper structure that is in electrical communication with the first interdigital transducer electrode, the first stopper structure including a first aluminum layer that underlies a portion of the first interdigital transducer electrode, the first piezoelectric layer further supporting a second stopper structure that is thicker than the first stopper structure, the second stopper structure having a second aluminum layer, a copper layer and a tin layer;

providing a second acoustic wave resonator including a second interdigital transducer electrode on a second piezoelectric layer having a second thickness that is greater than the first thickness of the first piezoelectric layer, the second stopper structure in electrical communication with the second interdigital transducer electrode;

bonding the first piezoelectric layer to the second piezoelectric layer to form a package structure encapsulating the first and second interdigital transducer electrodes including bonding the tin layer of the second stopper structure to an interconnect pad supported by the second piezoelectric layer; and

forming at least a first via by applying laser light to an outside surface of the first piezoelectric layer opposite the second stopper structure thereby removing at least a portion of the first piezoelectric layer to expose a portion of the second stopper structure, the first via extending through the first piezoelectric layer and partially through the second aluminum layer.

2. The method of claim 1 wherein the first piezoelectric layer is ground to be thinner than the second piezoelectric layer after bonding the second piezoelectric layer to the first piezoelectric layer.

3. The method of claim 2 wherein the second aluminum layer of the second stopper structure is less than three micrometers.

4. The method of claim 2 wherein a thickness of the second aluminum layer of the second stopper structure is less than four percent of the thickness of the first piezoelectric layer after the first piezoelectric layer has been ground to be thinner than the second piezoelectric layer.

5. The method of claim 1 wherein the first piezoelectric layer further supports a wall structure surrounding the first acoustic wave resonator and the first and second stopper structures in plan view.

6. The method of claim 5 wherein bonding the first piezoelectric layer to the second piezoelectric layer comprises bonding an upper surface of the wall structure to a wall bond pad supported by the second piezoelectric layer and surrounding the second acoustic wave resonator.

7. A method of fabricating a packaged acoustic wave component, the method comprising:

providing a first acoustic wave resonator including a first interdigital transducer electrode on a first piezoelectric layer having a first thickness, the first piezoelectric layer supporting a first stopper structure that is in electrical communication with the first interdigital transducer electrode, the first piezoelectric layer further supporting a second stopper structure that is thicker than the first stopper structure, the second stopper structure having an aluminum layer, a copper layer and a tin layer;

providing a second acoustic wave resonator including a second interdigital transducer electrode on a second piezoelectric layer having a second thickness that is greater than the first thickness of the first piezoelectric layer, the second stopper structure in electrical communication with the second interdigital transducer electrode;

bonding the first piezoelectric layer to the second piezoelectric layer to form a package structure encapsulating the first and second interdigital transducer electrodes with a thickness of a gap between the first stopper structure and the second piezoelectric layer is less than 30 microns; and

forming at least a first via by applying laser light to an outside surface of the first piezoelectric layer opposite the second stopper structure thereby removing at least a portion of the first piezoelectric layer to expose a portion of the second stopper structure, the first via extending through the first piezoelectric layer and partially through the aluminum layer.

8. The method of claim 7 wherein the first piezoelectric layer further supports a wall structure surrounding the first acoustic wave resonator and the first and second stopper structures in plan view.

9. The method of claim 8 wherein bonding the first piezoelectric layer to the second piezoelectric layer comprises bonding an upper surface of the wall structure to a wall bond pad supported by the second piezoelectric layer and surrounding the second acoustic wave resonator.

10. The method of claim 7 wherein the first acoustic wave resonator is associated with a first frequency band and wherein the second acoustic wave resonator is associated with a second frequency band.

11. A method of fabricating a packaged acoustic wave component, the method comprising:

providing a first acoustic wave resonator including a first piezoelectric layer having a first thickness, first piezoelectric layer supporting a first stopper structure and a first interdigital transducer electrode, the first stopper structure including a first aluminum layer that is in electrical communication with the first interdigital transducer electrode, the first piezoelectric layer further supporting a second stopper structure that is thicker than the first stopper structure, the second stopper structure having a second aluminum layer, a copper layer and a tin layer;

providing a second acoustic wave resonator including a second piezoelectric layer having a second thickness that is greater than the first thickness of the first piezoelectric layer, the second piezoelectric layer supporting a second interdigital transducer electrode, the second stopper structure in electrical communication with the second interdigital transducer electrode;

bonding the first piezoelectric layer to the second piezoelectric layer to form a package encapsulating the first and second interdigital transducer electrodes including bonding the tin layer of the second stopper structure to an interconnect pad supported by the second piezoelectric layer; and

forming at least a first via by applying laser light to an outside surface of the first piezoelectric layer opposite the second stopper structure thereby removing at least a portion of the first piezoelectric layer to expose a portion of the second stopper structure, the first via extending through the first piezoelectric layer and partially through the second aluminum layer to expose a portion of the second stopper structure.

12. The method of claim 11 wherein the first piezoelectric layer is ground so that a thickness of the first piezoelectric layer is less than a thickness of the second piezoelectric layer.

13. The method of claim 12 wherein the first and second aluminum layers are less than three micrometers.

14. The method of claim 13 wherein a thickness of the first and second aluminum layers is less than four percent of the thickness of the first piezoelectric layer after the first piezoelectric layer has been ground to be thinner than the second piezoelectric layer.

15. The method of claim 11 wherein the first aluminum layer of the first stopper structure underlines a portion of the first interdigital transducer electrode.

16. The method of claim 11 wherein the first interdigital transducer electrode, the first piezoelectric layer, the second interdigital transducer electrode and the second piezoelectric layer act as a band pass filter.

17. The method of claim 11 wherein the first acoustic wave resonator is associated with a first frequency band, and the second acoustic wave resonator is associated with a second frequency band.

18. The method of claim 17 wherein the first frequency band is different than the second frequency band.

19. A method of fabricating a packaged acoustic wave component, the method comprising:

providing a first acoustic wave resonator including a first piezoelectric layer having a first thickness, first piezoelectric layer supporting a first stopper structure and a first interdigital transducer electrode, the first stopper structure including a first aluminum layer that is in electrical communication with the first interdigital transducer electrode, the first piezoelectric layer further supporting a second stopper structure that is thicker than the first stopper structure, the second stopper structure having a second aluminum layer, a copper layer and a tin layer;

providing a second acoustic wave resonator including a second piezoelectric layer having a second thickness that is greater than the first thickness of the first piezoelectric layer, the second piezoelectric layer supporting a second interdigital transducer electrode, the second stopper structure in electrical communication with the second interdigital transducer electrode;

bonding the first piezoelectric layer to the second piezoelectric layer to form a package encapsulating the first and second interdigital transducer electrodes with a gap between the first stopper structure and the second piezoelectric layer is less than 30 microns; and

forming at least a first via by applying laser light to an outside surface of the first piezoelectric layer opposite the second stopper structure thereby removing at least a portion of the first piezoelectric layer to expose a portion of the second stopper structure, the first via extending through the first piezoelectric layer and partially through the second aluminum layer to expose a portion of the second stopper structure.

20. The method of claim 19 wherein the first interdigital transducer electrode, the first piezoelectric layer, the second interdigital transducer electrode and the second piezoelectric layer act as a band pass filter.

Continuity (6)
Continuation 17034810 · Sep 28, 2020
Provisional Application 62907255 · Sep 27, 2019
Provisional Application 62907264 · Sep 27, 2019
Provisional Application 62907290 · Sep 27, 2019
Provisional Application 62907329 · Sep 27, 2019
Related Publication 20210152151A1 · May 20, 2021
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