Semiconductor device including vertically stacked semiconductor dies
A semiconductor device is disclosed including one or more stacks of semiconductor dies vertically molded together in an encapsulated block. The semiconductor dies may comprise memory dies, or memory dies and a controller die.
1. A semiconductor device, comprising:
a plurality of stacks of semiconductor dies molded together in an encapsulated block, each stack of semiconductor dies comprising:
two or more semiconductor dies, each semiconductor die comprising:
a plurality of bond pads on a first surface of the die, and
a plurality of edge pads, formed in or on the first surface, spaced from the plurality of bond pads on the first surface and extending to an active edge of the semiconductor die adjacent to the first surface,
electrical interconnectors electrically coupling the plurality of edge pads to the plurality of bond pads, the active edges of the two or more semiconductor dies aligned to form an active sidewall;
a redistribution layer formed on the active sidewalls of the plurality of stacks of semiconductor dies, the redistribution layer electrically redistributing the positions of the plurality of edge pads to fan out positions on a surface of the redistribution layer; and
a plurality of solder balls, electrically coupled to the fan out positions of the redistribution layer, configured to electrically connect the semiconductor device to a host device.
2. The semiconductor device of claim 1 , wherein the plurality of stacks of semiconductor dies are stacked horizontally on a first temporary carrier, and subsequently stacked vertically on a second temporary carrier.
3. The semiconductor device of claim 2 , wherein the plurality of stacks of semiconductor dies are encapsulated in mold compound into the encapsulated block on the second temporary carrier.
4. The semiconductor device of claim 1 , wherein each stack of the plurality of stacks of semiconductor dies comprises a plurality of flash memory dies.
5. The semiconductor device of claim 4 , wherein each stack of the plurality of stacks of semiconductor dies further comprises a controller die controlling the plurality of flash memory dies in each of the plurality of stacks.
6. The semiconductor device of claim 4 , wherein one stack of the plurality of stacks of semiconductor dies further comprises a single controller die controlling the plurality of flash memory dies in all of the plurality of stacks.
7. The semiconductor device of claim 1 , wherein each stack of the plurality of stacks of semiconductor dies further comprises electronic components.
8. The semiconductor device of claim 7 , wherein the electronic components comprise passive components.
9. A semiconductor device, comprising:
a stack of semiconductor dies, comprising:
two or more semiconductor dies, each semiconductor die comprising:
a plurality of bond pads on a first surface of the die, and
a plurality of edge pads, formed in or on the first surface and extending to an active edge of the semiconductor die adjacent to the first surface,
electrical interconnectors electrically coupling the plurality of edge pads to the plurality of bond pads, the active edges of the two or more semiconductor dies aligned to form an active sidewall;
mold compound encapsulating the stack of semiconductor dies into a molded block with the active sidewall left exposed;
a redistribution layer formed on the active sidewall of the stack of semiconductor dies, the redistribution layer electrically coupling the plurality of bond pads of the two or more semiconductor dies; and
a plurality of solder balls formed in through-mold vias through a surface of the mold compound and electrically coupled to the plurality of bond pads of a semiconductor die of the stack of semiconductor dies, the plurality of solder balls configured to electrically connect the semiconductor device to a host device.
10. The semiconductor device of claim 9 , wherein the semiconductor device is singulated from an encapsulated block comprising a plurality of the semiconductor devices.
11. The semiconductor device of claim 9 , wherein the two or more semiconductor dies in the stack of semiconductor dies are stacked horizontally on a first temporary carrier, and subsequently stacked vertically on a second temporary carrier.
12. The semiconductor device of claim 11 , wherein the stack of semiconductor dies is encapsulated in mold compound on the second temporary carrier.
13. The semiconductor device of claim 9 , wherein the stack of semiconductor dies comprises a plurality of flash memory dies.
14. The semiconductor device of claim 13 , wherein the stack of semiconductor dies further comprises a controller die controlling the plurality flash memory dies.
15. The semiconductor device of claim 9 , wherein the plurality of solder balls are soldered to the plurality of bond pads of a controller die of the two or more semiconductor dies.
16. The semiconductor device of claim 9 , wherein the plurality of solder balls are soldered to the plurality of bond pads of a flash memory die of the two or more semiconductor dies.
17. A semiconductor device, comprising:
a stack of semiconductor dies, comprising:
two or more semiconductor dies, each semiconductor die comprising:
bond pad means for electrically connecting integrated circuits in the semiconductor die to a first surface of the semiconductor die, and
edge pad means for electrically coupling the bond pad means to an active edge of the semiconductor die adjacent to the first surface,
electrical interconnectors electrically coupling the edge pad means to the bond pad means, the active edges of the two or more semiconductor dies aligned to form an active sidewall;
mold compound encapsulating the stack of semiconductor dies into a molded block with the active sidewall left exposed;
redistribution means, formed on the active sidewall of the stack of semiconductor dies, for electrically coupling the bond pad means of the two or more semiconductor dies; and
conductive ball means, formed in through-mold vias through a surface of the mold compound and electrically coupled to bond pad means of a semiconductor die of the stack of semiconductor dies, for electrically connecting the semiconductor device to a host device.
18. The semiconductor device of claim 17 , wherein the stack of semiconductor dies comprises a plurality of flash memory dies.
19. The semiconductor device of claim 18 , wherein the stack of semiconductor dies further comprises a controller die controlling the plurality flash memory dies.
20. The semiconductor device of claim 17 , wherein the conductive ball means are soldered to bond pad means of a controller die of the two or more semiconductor dies.