Circuitry to compensate for data drift in analog neural memory in an artificial neural network
Numerous embodiments are provided for compensating for drift error in non-volatile memory cells within a VMM array in an analog neuromorphic memory system. For example, in one embodiment, a circuit is provided for compensating for drift error during a read operation, the circuit comprising a data drift monitoring circuit coupled to the array for generating an output indicative of data drift; and a bitline compensation circuit for generating a compensation current in response to the output from the data drift monitoring circuit and injecting the compensation current into one or more bitlines of the array.
1. A circuit comprising:
a data drift monitoring circuit coupled to a vector-by-matrix multiplication array, the data drift monitoring circuit to generate an output indicative of an amount of data drift; and
a bitline compensation circuit to generate a compensation current in response to the output from the data drift monitoring circuit and inject the compensation current into an array output current received from one or more bitlines of the vector-by-matrix multiplication array.
2. The circuit of claim 1 , wherein the bitline compensation circuit comprises a first adjustable current source and a second adjustable current source and the compensation current is the difference between a current generated by the first adjustable current source and a current generated by the second adjustable current source.
3. The circuit of claim 1 , wherein the bitline compensation circuit comprises an operational amplifier, a first adjustable resistor, and a second adjustable resistor.
4. The circuit of claim 1 , wherein the bitline compensation circuit comprises an operational amplifier, a current source, and an adjustable capacitor.
5. The circuit of claim 1 , wherein the bitline compensation circuit comprises an M:N current mirror.
6. The circuit of claim 1 , wherein the bitline compensation circuit comprises an operational amplifier, a first adjustable resistor, a second adjustable resistor, and a third adjustable resistor.
7. The circuit of claim 1 , wherein the bitline compensation circuit comprises an operational amplifier, a current source, a current shifter, and an adjustable capacitor.
8. A circuit comprising:
a bitline compensation circuit to generate a compensation current and inject the compensation current into an array output current received from one or more bitlines of an array, the compensation current to compensate for drift error during a read operation of the array.
9. The circuit of claim 8 , wherein the bitline compensation circuit comprises an additive compensating current.
10. The circuit of claim 8 , wherein the bitline compensation circuit comprises a subtractive compensating current.
11. The circuit of claim 8 , wherein the array comprises a vector-by-matrix multiplication array is formed of split-gate non-volatile memory cells.
12. A circuit comprising:
a bitline compensation circuit to scale an array output current received from one or more bitlines of an array to compensate for drift error during a read operation of the array.
13. The circuit of claim 12 , wherein the scaling comprises upward scaling.
14. The circuit of claim 12 , wherein the scaling comprises downward scaling.
15. The circuit of claim 12 , wherein the scaling is determined by the ratio of two resistors.
16. The circuit of claim 12 , wherein the scaling is determined by the ratio of two capacitors.
17. The circuit of claim 12 , wherein the array comprises a vector-by-matrix multiplication array is formed of split-gate non-volatile memory cells.
18. A circuit comprising:
a bitline compensation circuit to shift an array output current received from one or more bitlines of an array to compensate for drift error during a read operation of the array.
19. The circuit of claim 18 , wherein the array comprises a vector-by-matrix multiplication array is formed of split-gate non-volatile memory cells.
20. The circuit of claim 18 , wherein one or more cells in the vector-by-matrix multiplication array are programmed using Fowler-Nordheim tunneling.
21. The circuit of claim 19 , wherein one or more cells in the vector-by-matrix multiplication array are programmed using Fowler-Nordheim tunneling.
22. A method comprising:
monitoring an amount of data drift in a vector-by-matrix multiplication array;
generating a bitline compensation current in response to the amount of data drift; and
injecting the bitline compensation current into an array output current received from one or more bitlines of the vector-by-matrix multiplication array during a read operation to compensate for drift error.
23. The method of claim 22 , wherein the vector-by-matrix multiplication array is formed of split-gate non-volatile memory cells.